AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD). The room temperature (RT) two-dimensional electron gas (2DEG) mobility was as high as 2215 cm(2)/V s, with a 2DEG concentration of 1.044 x 10(13)cm(-2). The 50 mm HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with a resistance uniformity of 2.02%. The 0.35 Pin gate length HEMT devices based on this material structure, exhibited a maximum drain current density of 1300 mA/mm, a maximum extrinsic transconductance of 314 mS/mm, a current gain cut-off frequency of 28 GHz and a maximum oscillation frequency of 60 GHz. The maximum output power density of 4.10 W/mm was achieved at 8 GHz, with a power gain of 6.13 dB and a power added efficiency (PAE) of 33.6%. (c) 2006 Elsevier B.V. All rights reserved.

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.

Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Pseudomorphic Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As (y1 greater than or equal to 0.52) modulation-doped heterostructures with an intentional nonlattice-matched buffer layer were successfully grown by molecular beam epitaxy on (100)InP substrates. Fourier transform photoluminescence and double crystal x-ray diffraction measurements show a superior crystalline quality in the high In content channel, when In mole fraction increases from y1=0.52 to 0.55 in the Iny1Al1-y1As buffer layer. In this case, an increasing of 16.3% and 23.5% for conductivity (mu xn(s)) and mobility, related to the strain compensation in the In0.73Ga0.27As channel, was achieved, respectively, comparing to the structure containing a well-lattice matched buffer layer. With increasing the mismatch further (y1=0.58), a morphology with cross-hatched pattern was observed due to the onset of a large amount of misfit dislocations, and the electronic characterization is not able to be improved continuously. Because we can realize high quality strained P-HEMTs in a relative wide range of equivalent beam flux (EBF) ratios, the stringent control over the constant EBF is not indispensable on this In-based material system. (C) 1997 American Vacuum Society.

A High Speed, 12-Channel Parallel, Monolithic Integrated CMOS OEIC Receiver

The design and fabrication of a high speed, 12-channel monolithic integrated CMOS optoelectronic integrated circuit(OEIC) receiver are reported.Each channel of the receiver consists of a photodetector,a transimpedance amplifier,and a post-amplifier.The double photodiode structure speeds up the receiver but hinders responsivity.The adoption of active inductors in the TIA circuit extends the-3dB bandwidth to a higher level.The receiver has been realized in a CSMC 0.6μm standard CMOS process.The measured results show that a single channel of the receiver is able to work at bit rates of 0.8～1.4Gb/s. Altogether, the 12-channel OEIC receiver chip can be operated at 15Gb/s.

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

新型多道高精度的时间-电压转换电路系统的设计；A Design of New Multi-channel High Precision Time-to-amplitude Convert (TAC) Circuit

在发展髙性能多路小型化前端电路方面,阐述了一种用于测试时间的系统电路的设计与实现。其突出特点是转换速度快,电路结构简单,输入信号范围大、精度高、功耗低,电路采用改进的TAC方法,用于处理快速的时间信号,利用高速DMOS开关,并优化控制逻辑时序,极大提高了测试精度。

Conducting polyaniline film from aqueous dispersion: Crystallizable side chain forced lamellar structure for high conductivity

Aqueous conducting polyaniline dispersion was prepared employing acidic phosphate ester bearing hydrophilic ethylene glycol segment as dopant, and conducting film with electrical conductivity of 25 S/cm was obtained from the dispersion. Ordered self-assembly lamellar structure with interlamellar distance of 1.2 nm was observed in the film, which consisted of alternating layers of rigid polyaniline chain and flexible phosphate ester side chains, where the phosphate side chain layer was separated by two rigid polyaniline layers. The lamellar structure leading to high conducting film was formed due to the confinement of polyaniline chain by crystallizable phosphate side chain, since the electrical conductivity decreased by four orders of magnitude once the dopant side chain crystalline was destroyed. The crystallizable side chain forced lamellar structure is expected to be a new chance for highly conducting polyaniline.

Grain boundary conductivity of high purity neodymium-doped ceria nanosystem with and without the doping of molybdenum oxide

Solid solutions of Ce1-xNdxO2-x/2 (0.05 <= x <= 0.2) and (Ce1-xNdx)(0.95)MO0.05O2-delta (0.05 <= x <= 0.2) have been synthesized by a modified sol-gel method. Both materials have very low content of SiO2 (similar to 27 ppm). Their structures and ionic conductivities were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and electrochemical impedance spectroscopy (M). The XRD patterns indicate that these materials are single phases with a cubic fluorite structure. The powders calcined at 300 degrees C with a crystal size of 5.7 nm have good sinterability, and the relative density could reach above 96% after being sintered at 1450 degrees C. With the addition Of MoO3, the sintering temperature could be decreased to 1250 degrees C. Impedance spectroscopy measurement in the temperature range of 250-800 degrees C indicates that a sharp increase of conductivity is observed when a small amount of Nd2O3 is added into ceria, of which Ce0.85Nd0.15O1.925 (15NDC) shows the highest conductivity. With the addition of a small amount Of MoO3, the grain boundary conductivity of 15NDC at 600 degrees C increases from 2.56 S m(-1) to 5.62 S m(-1).

Processible nanomaterials with high conductivity and magnetizability. Preparation and properties of maghemite/polyaniline nanocomposite films

A versatile process employing anionic surfactants has been developed for the preparation of processible nanocomposite films with electrical conductivity and magnetic susceptibility. Maghemite (g-Fe2O3) nanoclusters (similar to 10 nm in size) are coated with 4-dodecyl- benzenesulfonic acid, and polyaniline (PAn) chains are doped with 10-camphorsulfonic acid. The coated nanoclusters and doped polymers are soluble in common solvents, and casting the solutions readily gives free-standing nanocomposite films with nanocluster contents as high as similar to 50 wt %. The g-Fe2O3/PAn nanocomposites show high conductivity (82-337 S cm(-1)) and magnetizability (up to similar to 35 emu/g g-Fe2O3).

Probe for Measurements of Density/Conductivity in Flows of Conducting Fluids

A probe utilizing the bipolar pulse method to measure the density of a conducting fluid has been developed. The probe is specially designed such that the concentration of a stream tube can be sampled continuously. The density was determined indirectly from the measurement of solution conductivity. The probe was calibrated using standard NaCl solutions of varying molarity and was able to rapidly determine the density of a fluid with continuously varying conductance. Measurements of the conductivity profiles, corresponding density profiles, and their fluctuation levels are demonstrated in a channel flow with an electrolyte injected from a slot in one wall.

Thermal fatigue on pistons induced by shaped high power laser. Part II: Design of spatial intensity distribution via numerical simulation

In the laser induced thermal fatigue simulation test on pistons, the high power laser was transformed from the incident Gaussian beam into a concentric multi-circular pattern with specific intensity ratio. The spatial intensity distribution of the shaped beam, which determines the temperature field in the piston, must be designed before a diffractive optical element (DOE) can be manufactured. In this paper, a reverse method based on finite element model (FEM) was proposed to design the intensity distribution in order to simulate the thermal loadings on pistons. Temperature fields were obtained by solving a transient three-dimensional heat conduction equation with convective boundary conditions at the surfaces of the piston workpiece. The numerical model then was validated by approaching the computational results to the experimental data. During the process, some important parameters including laser absorptivity, convective heat transfer coefficient, thermal conductivity and Biot number were also validated. Then, optimization procedure was processed to find favorable spatial intensity distribution for the shaped beam, with the aid of the validated FEM. The analysis shows that the reverse method incorporated with numerical simulation can reduce design cycle and design expense efficiently. This method can serve as a kind of virtual experimental vehicle as well, which makes the thermal fatigue simulation test more controllable and predictable. (C) 2007 Elsevier Ltd. All rights reserved.

Enhanced cycling performance and high energy density of LiFePO4 based lithium ion batteries

LiFePO4 attracts a lot of attention as cathode materials for the next generation of lithium ion batteries. However, LiFePO4 has a poor rate capability attributed to low electronic conductivity and low density. There is seldom data reported on lithium ion batteries with LiFePO4 as cathode and graphite as anode. According to our experimental results, the capacity fading on cycling is surprisingly negligible at 1664 cycles for the cell type 042040. It delivers a capacity of 1170 mAh for 18650 cell type at 4.5C discharge rate. It is confirmed that lithium ion batteries with LiFePO4 as cathode are suitable for electric vehicle application. (c) 2007 Elsevier B.V. All rights reserved.

Dual confocal laser-induced fluorescence/moveable contactless

A new dual simultaneous detector was developed for capillary electrophoresis microchip. Confocal laser-induced fluorescence (LIF) and moveable contactless conductivity detection (MCCD) were combined together for the first time. The two detection systems shared a common detection cell and could respond simultaneously. They were mutually independent and advantageous in analyses of mixtures containing organic and inorganic ions. The confocal LIF had high sensitivity and the MCCD could move along the separation channel and detect in different positions of the channel. The detection conditions of the dual detector were optimized. Rhodamine B was used to evaluate the performance of the dual detector. The limit of detection of the confocal LIF was <5 nM, and that of the MCCD was 0.1 μM. The dual detector had highly sensitivity and could offer response easily, rapidly and simultaneously.