Extracellular carbohydrate polymers from five desert soil algae with different cohesion in the stabilization of fine sand grain

Extracellular polymeric substances (EPS) from four filamentous cyanobacteria Microcoleus vaginatus, Scytonema javanicum, Phormidium tenue and Nostoc sp. and a coccoid single-cell green alga Desmococcus olivaceus that had been separated from desert algal crusts of Tegger desert of China, were investigated for their chemical composition, structure,and physical properties. The EPS contained 7.5-50.3% protein (in polymers ranging from 14 to more than 200 kD, SDS-PAGE) and 16.2-46.5% carbohydrate (110-460 kD, GFC). 6-12 kinds of monosaccharides, including 2-O-methyl rhamnose, 2-O-methyl glucose, and N-acetyl glucosamine were found. The main carbohydrate chains from M. vaginatus and S. javanicum consisted mainly of equal proportion of Man, Gal and Glc, that from P. tenue consisted mainly of arabinose, glucose and rhamnose. Arabinose was present in pyranose form, mainly alpha-L 1 --> 3 linked, with branches on C4 of almost half of the units. Glucose was responsible for the terminal units, in addition of having some units as beta1 --> 3 and some as beta1 --> 4 linked. Rhamnose was mainly 1 --> 3 linked with branches on C2 on half of the units. The carbohydrate polymer from D. olivaceus was composed mainly of beta1 --> 4 linked xylose, galactose and glucose. The galactose part was present both in beta-pyranose and -furanose forms. Arabinose in alpha-L-furanose form was mainly present as 1 --> 2 and 1 --> 2, 5 linked units, rhamnose only as alpha 1 --> 3 and xylose as beta 1 --> 4. The backbone of the polysaccharide from Nostoc sp. was composed of beta-1 --> 4 linked xylose, galactose and glucose. Most of the glucose was branched on position C6, terminal glucose and 2-O-methyl glucose units are also present. The relationship between structure, physical properties and potential biological function is discussed. (C) 2003 Elsevier Ltd. All rights reserved.

Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries

Using a first-principles method, we investigate the structural and electronic properties of grain boundaries (GBs) in polycrystalline CdTe and the effects of copassivation of elements with far distinct electronegativities. Of the two types of GBs studied in this Letter, we find that the Cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as Cl and Cu, whereas the Te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of Cl and Cu. Our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the GBs.

Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field

A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.

Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer

We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.

Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition

The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN/GaN system with large out-of-plane lattice mismatch. (c) 2006 American Institute of Physics.

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction, existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

New insight into the origin of twin and grain boundary in InP

X-ray reflectivity curves show bi-crystal (twin) characteristics. Defect segregations at the twin boundary can be seen, whereas stress is relaxed at the edge of the boundary. Relaxation of the stress resulted in the formation of twins and other defects. As a result of the formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. Stress, chemical stoichiometry deviation and non-homogeneous distribution of impurities are the key factors that cause twins in LEC InP crystal growth. (C) 1999 Elsevier Science Ltd. All rights reserved.

Stacking chirped pulse optical parametric amplification

Stacking chirped pulse optical parametric amplification based on a home-built Yb(3+)-doped mode-locked fiber laser and an all-fiber pulse stacker has been demonstrated. Energic 11 mJ shaped pulses with pulse duration of 2.3 ns and a net total gain of higher than 1.1 x 10(7) at fluctuation less than 2% rms are achieved by optical parametric amplification pumped by a Q-switched Nd:YAG frequency-doubled laser, which provides a simple and efficient amplification scheme for temporally shaped pulses by stacking chirped pulse. (C) 2009 Elsevier B.V. All rights reserved.

ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.