ELIMINATION OF STACKING-FAULTS IN A SILICON EPITAXIAL LAYER OF (100) ORIENTATION BY HEAT-TREATMENT
| Data(s) |
1990
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
CAI TH.ELIMINATION OF STACKING-FAULTS IN A SILICON EPITAXIAL LAYER OF (100) ORIENTATION BY HEAT-TREATMENT,JOURNAL OF APPLIED PHYSICS,1990,67(11):7176-7178 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
