47 resultados para duplex scan
Resumo:
提出一种步进扫描投影光刻机承片台不平度检测新技术。在晶圆与承片台存在不同偏移量时,利用线性差分传感器在线测量晶圆上不同点的局部高度;通过建立临时边界条件,以递推法消除晶圆面形影响,并逐行计算出承片台的相对不平度;通过逐行计算的结果递推相邻行之间的高度差,并将该高度差叠加到每一行,以消除临时边界条件的限制,得到处于同一高度上的承片台不平度;将计算的结果作为初始值,根据最小二乘原理,以邻近的四个测量点作为参考,逐步逼近得到承片台的真实不平度。计算机仿真结果验证了该检测方法的正确性,计算结果逐步收敛并逼近真实值
Resumo:
提出一种新的步进扫描投影光刻机工件台方镜不平度测量方法。以方镜平移补偿量与旋转补偿量为测量目标,使用两个双频激光干涉仪分别测量工件台在x和y方向的位置和旋转量;将方镜不平度的测量按照一定的偏移量分成若干个序列,每一个序列包括对方镜有效区域的若干次往返测量;根据所有序列的测量结果计算出方镜的旋转补偿量;为每一个序列建立临时边界条件,并据此计算出每一序列所测得的方镜粗略平移补偿量;采用三次样条插值与最小二乘法建立每一个序列间的关系,以平滑连接所有测量序列得到精确的方镜平移补偿量。结果表明,该方法用于测量方镜平
Resumo:
提出一种精确检测光刻机激光干涉仪测量系统非正交性的新方法。将对准标记曝光到硅片表面并进行显影;利用光学对准系统测量曝光到硅片上的对准标记理论曝光位置与实际读取位置的偏差;由推导的位置偏差与非正交因子、坐标轴尺度比例、过程引入误差的线性模型,根据最小二乘原理计算出干涉仪测量系统的非正交性。实验结果表明,利用该方法使用同一硅片在不同旋转角下进行测量,干涉仪测量系统非正交因子的测量重复精度优于0.01 μrad,坐标轴尺度比例的测量重复精度优于0.7×10-6。使用不同的硅片进行测量,非正交因子的测量再现性优于
Resumo:
SrBi2Ta2O9 (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2), Of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58 cm(2)/GW were obtained for the wavelengths 532 nm and 1.064 mum, respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064-mum. laser excitation. (C) 2001 Optical Society of America.
Resumo:
超分辨近场结构(Super-RENS)技术是近年来发展起来的一种新型近场光存储技术,是目前最有实用化前景的纳米尺度近场超分辨技术之一。初步研究表明,其近场超分辨特性与非线性响应密切相关,研究其非线性光学特性对阐明物理机制、发展新的掩模材料和非线性光学应用都具有重要意义。对散射中心型超分辨近场结构非线性光学特性的最新研究进展进行了介绍和分析。
Resumo:
从几何光学角度讨论了积分棒的匀光原理,介绍了积分棒在步进扫描投影光刻系统中的应用,分析了积分棒入射光束的数值孔径对刀口狭缝面上光强分布的影响,得到了积分棒尺寸与刀口狭缝面上照明视场的关系,为步进扫描投影光刻系统中积分棒的设计提供了依据。
Resumo:
本文提出了一种自动辨识条纹顺序的方法。它使用简化的Otsu算法获得阈值,然后在45°的范围内对干涉条纹的位置进行搜索,最后由区域搜索技术辨识不同的条纹。实验结果表明,本方法能可靠地获得近似45°到90°的干涉条纹顺序。
Resumo:
依据Z-scan技术,使用波长532nm的纳秒脉冲,研究了通过聚焦的飞秒脉冲诱导并辅以热处理得到的金纳米粒子析出的玻璃的非线性吸收.观察到金纳米粒子析出的玻璃具有饱和吸收特性.根据局域场效应,对实验结果拟合,得到在接近表面等离子体共振激发情况下,金纳米粒子三阶极化率虚部分别为Imχm^(3)=5.7×10^-7esu.玻璃样品中金纳米粒子的非线性响应主要起源于热电子贡献。
Resumo:
Large ruby with the size of circle divide75 x 45 mm was grown by temperature gradient technique for the first time. Absorption spectrum was carried out in the range of 190-800 nm by spectrophotometer, and the concentration spatial distribution of Cr3+ in ruby was calculated from the absorption coefficient that based on the Beer-Lambert's Law. Cr3+ ions gradually increase alone both the growth axis and the radial direction. The shape and ingredient of the inclusions were measured by means of Leitz ride field microscopy and scanning electron microscopy. Lane photos and X-ray omega scan show the good quality of as grown ruby. The optimized growth conditions were pointed out based on the observation. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
水热法生长了复合钛宝石(Al2O3/Ti:Al2O3)激光晶体.对外层Al2O3X射线ω扫描表明其晶体质量很高.外层生长的Al2O3和内部的钛宝石激光棒结合牢固、紧密,因而能适应高强度泵浦所带来的激光介质内部的热应力.复合激光晶体界面层带来的光损耗很小.就我们所知,这是首次用水热法生长复合激光晶体.
Resumo:
对不同辐照条件下近红外飞秒激光在K9玻璃内部诱导产生的暗化现象和永久性折射率改变进行了实验研究。通过辐照前后的显微镜图片、吸收光谱、电子自旋共振谱(ESR)以及激光衍射实验,分析了K9玻璃中暗化现象产生的微观过程,发现暗化是由诱导产生的空穴型色心引起的。暗化程度和折射率改变随激光强度、扫描速度、扫描行间距变化而变化。光致色心的形成与非线性电离有关。对折射率永久性改变进行了简单说明,其机理仍在探索中。
Resumo:
We obtain Au and Ag nanoparticles precipitated in glasses by irradiation of focused femtosecond pulses, and investigate the nonlinear absorptions of the glasses by using Z-scan technique with ns pulses at 532 nm. We observe the saturable absorption behavior for An nanoparticles precipitated glasses and the reverse saturable ones for Ag ones. We also obtain, by fitting to the experimental results in the light of the local field effect near and away from the surface plasmon resonance, chi(m)((3)) = 4.5 x 10(-7) and 5.9 x 10(-8) esu for m the imaginary parts of the third-order susceptibilities for Au and Ag nanoparticles, respectively. The nonlinear response of Au nanoparticles in the glass samples arises mainly from the hot-electron contribution and the saturation of the interband transitions near the surface plasmon resonance, whereas that of Ag nanoparticles in the glass samples from the interband transitions. These show that the obtained glasses can be used as optoelectronic devices suiting for different demands. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
We report the space selective precipitation of Pd nanoparticles in Pd2+ -doped silicate glass by ultrashort laser pulses irradiation and further annealing. Absorption spectra, transmission electron microscopy, refractive index measurement and Z-scan technique demonstrated that metallic Pd nanoparticles were precipitated in the glass sample after irradiation by an 800-nm femtosecond laser and subsequent annealing at 600 degrees C. We discuss a refractive index change and nonlinear absorption that combines the precipitation of Pd nanoparticles. Crown Copyright (c) 2005 Published by Elsevier B.V. All rights reserved.
Resumo:
The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.
Resumo:
We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.