Biotransfer of persistent organic pollutants from a large site in China used for the disassembly of electronic and electrical waste

Samples of groundwater, river water, river sediment, paddy soil, rice seeds, hen eggs, fish, umbilical cord blood, and newborn meconium were collected from October 2002 to October 2003 near a large site in China used for the disassembly of obsolete transformers and other electronic or electrical waste. Six indicator PCB congeners, three non-ortho dioxin-like PCB congeners, and six organochlorine pesticides were determined in the samples by GC with electron capture detector. The results demonstrated that the local environment and edible foods had been seriously polluted by toxic PCBs and organochlorine pesticides. The actual daily intakes (ADIs) of these pollutants were estimated for local residents living in the area. The intake data showed that the contents of PCBs in these local residents were substantial, as the ADI estimates greatly exceed the reference doses set by the World Health Organization and the United States Agency for Toxic Substances and Disease Registry. The presence of the indicator PCB congeners in the cord blood and the meconium samples, as well as significant correlations (r(2) > 0.80, p < 0.05) between these levels, suggests a potential biotransfer of these indicators from mothers to their newborns. This preliminary study showed that obsolete transformers and other electronic or electrical waste can be an important source for the emission of persistent organic pollutants into the local environment, such as through leakage, evaporation, runoff, and leaching. Contamination from this source appears to have reached the level considered to be a serious threat to environmental and human health around the disassembly site.

Difflugia mulanensis nov spec., a freshwater testate amoeba from Lake Mulan, China

Testate amoebae are an important and abundant component of aquatic ecosystems. Our knowledge of their distribution and the species inventory in Asia is still limited. This paper describes a new planktonic Difflugia from Lake Mulan, province of Hubei, China. These findings are of taxonomic, as well as biogeographic significance because Difflugia mulanensis nov. spec. is a rare and perhaps the only locally distributed member of the well-known urceolate division within this most species-rich genus of lobose testate amoebae. We have studied its morphology and biometry with light and scanning electron microscopical methods. D. mulanensis differs from related species by its very large wide funnel-shaped apertural collar which normally exceeds the width of the test, a relatively long neck, its rounded apical end and the presence of only one nucleus. All shell parameters are normally distributed with low variability. Only the collar height is more variable. This shows that D. mulanensis is a size-monomorphic species. (c) 2005 Elsevier GrnbH. All rights reserved.

Cultured gill epithelial cells from tilapia (Oreochromis niloticus): a new in vitro assay for toxicants

A culture gill epithelium from seawater-adapted tilapia (Oreochromis niloticus) was developed for testing PAHs and dioxin-like contaminants in seawater. The epithelia consists two to three layers of epithelial cells incorporating both pavement cells and mitochondria-rich cells (MRCs). Polarity and a stable transepithelial resistance (TER) were maintained. and closely resembled those in fish gills in vivo. The tightness (integrity) of the epithelia remained unchanged upon exposure to benzo[a]pyrene (B[a]P). 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD) and 3,3',4,4',5-pentachlorobiphenyl (PCB#126), while a concentration-dependent response of EROD activity in the epithelia was induced within 18-24 h when the apical side was exposed to these toxicants. The 24 h EC50 of EROD activity was 2.77 x 10(-7) M for PCB#126, 1.85 x 10(-7) M for B[a]P and 7.38 x 10(-10) M for TCDD. showing: that the preparation was not only sensitive to PAHs and dioxin-like compounds, but also able to produce inductive potency of AhR agonists that generally agreed with those derived from other established in vitro and in vivo systems. The results suggest, that the cultured gill epithelia from seawater-adapted tilapia may serve as a simple. rapid and cost-effective tool for assessing exposure and potential effects of toxicants in marine waters. (C) 2004 Elsevier B.V. All rights reserved.

New data on Myxobolus longisporus (Myxozoa : Myxobolidae), a gill infecting parasite of carp, Cyprinus carpio haematopterus, from Chinese lakes

The original description of Myxobolus longisporus Nie et Li, 1992, the species infecting gills of Cyprinus carpio haematopterus L., is supplemented with new data on the spore morphology and pathogenicity. Spores are elongate pyriform with pointed anterior end, 15.7 (15.5-16.5) mum long, 6.7 (6-8) mum wide and 5.5 mum thick. Sutural ridge is straight and narrow. Mucus envelope is lacking. Two equal-sized elongate pyriform polar capsules are 8.5 mum long and 2.5 mum wide with convergent long axes. Polar filament coiled perpendicularly to the long axis of the capsule makes 9 (8-10) turns. Posterior end of polar capsules exceeds mid-spore by 15-20%. Cyst-like plasmodia are localised in the gill secondary lamellae. The infection is described in adult big host specimens. Gross lesions manifested as dark red colouration of gill tissues were restricted to the ventral part of the first gill arches. Remarkable site specificity (apical part of secondary lamellae) was observed in the course of development of microscopic lesions. M. longisporus is characterised also on the molecular level using sequences of SSU rRNA gene. Phylogenetic analysis based on these sequences has allowed clearer phylogenetic relationships to be established with other species of the genus Myxobolus sequenced to date.

Two new species of Rotifera from China

Two new rotifera species, Brachionus huangi n. sp, and Lecane chinesensis n. sp. are described and illustrated from different localities in China. The main distinguishing taxonomic features of B. huangi are three pairs of apical spines, a pair of symmetrical caudal spines and a wide caudal projection. For L. chinesensis, the main characteristics are the two-sided small extentions of the foot pseudosegment, the long and innercurved apical spines and ventral lorica anteriorly narrower than the dorsal one.

Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators

The enhancement of quality factor for TE whispering-gallery modes is analyzed for three-dimensional microcylinder resonators based on the destructive interference between vertical leakage modes. In the microcylinder resonator, the TE whispering-gallery modes can couple with vertical propagation modes, which results in vertical radiation loss and low quality factors. However, the vertical loss can be canceled by choosing appropriate thickness of the upper cladding layer or radius of the microcylinder. A mode quality factor increase by three orders of magnitude is predicted by finite-difference time-domain simulation. Furthermore, the condition of vertical leakage cancellation is analyzed.

Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET

In this work, we investigate the effects of the indium ion implantation towards the back-channel interface on the total dose hardness of the n-channel SOI MOSFET. The results show that the indium implant has slight impact on the normal threshold voltage while preserving low leakage current after irradiation. The advantage is attributed to the narrow as-implanted and postanneal profile of the indium implantation. Two-dimensional simulations have been used to understand the physical mechanisms of the effects.

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

Anode floating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm(2) fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50 V) of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p(+) inner ring and the n(+) anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.

An investigation of the mode characteristics of SOI submicron rib waveguides using the film mode matching method

The mode characteristics of SOI (silicon-on-insulator) submicron rib waveguides are very different from those of micrometer-sized ones. Using the full-vector film mode matching method, we propose a simple criterion to determine whether a waveguide mode is guided or not. The single-mode condition for deep-etched waveguides is obtained using this criterion. We also obtain the inherent TM mode leakage and sharp cancelation effects due to TE-TM mode coupling in shallow-etched rib waveguides from numerical simulations, which agree well with the analytical results based on total internal reflection and interference theories.

Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil

We report on improved electrical properties of lead zirconate titanate (PZT) film deposited on titanium metal foil using nitrogen annealing. After nitrogen annealing of the PZT capacitors, symmetric capacitance-voltage (C-V) characteristics, higher dielectric constant and breakdown field, less change of dielectric constant with frequency, lower dielectric loss and leakage current are obtained. (C) 2003 Elsevier B.V. All rights reserved.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.