三峡水库上游消落区生态渔业模式研究

根据生态渔业系统的需要,结合不同鱼的食性和空间生态位要求,对开县当地常规放养模式的品种和结构进行了合理调整。确定以草鱼为主养鱼,鲢、鳙为配养鱼,由食性相似而价值较高的异育银鲫代替常规的鲤鱼,并套养黄颡鱼,各种鱼的放养比例大致为草鱼45.7%、异育银鲫11%、黄颡鱼0.6%、鲢25%、鳙17.8%。结果表明,该模式单产约7267.5kg/hm2,毛利润约18757.5元/hm2,增产比例为53.7%,经济效益提高143%。

微量营养物质对毛纺废水生物处理效果的影响

研究了Mg、Mo、Zn、维生素B1以及烟酸等微量营养物质对活性污泥降解CODCr活性的 影响,同时,对微量营养物质作用前后处理系统微生物群落结构进行了比较研究。试验结果表明:毛 纺废水缺乏生物处理系统所需足够的微量营养物质;不同种类和浓度的微量营养物质对活性污泥降 解CODCr活性的影响效果也不相同,Mg、Mo、Zn、雏生素B1和烟酸的最佳浓度分别为5 mg／L, 2 mg／L,1 mg／L,1 mg／L和1 mg／L;其最佳促进效果可使CODCr降解速率分别达到对照系统的 180％、140％、130％,

银鲫生殖方式多样性的转铁蛋白和同工酶标记的遗传分析

用银鲫克隆D、克隆A和鲤鱼的精子分别与银鲫克隆F的卵子受精产生了三种繁殖组合FD、LA和FL;再用转铁蛋白和同工酶标记对这三种组合的遗传模式进行比较研究。结果发现,FL���合的子代具有与其母本完全相同的体形和电泳图谱,表现出雌核生殖银鲫的克隆品性。而在FD组合中则出现了体形的分化和酶谱的多态性;在一些个体的蛋白座位上同时检测到了父本和母本各自特有的谱带,证明FD生殖过程中有性重组的发生。同时,在所研究的蛋白的不同座位上存在着极端的连锁不平衡现象,可以推断在FD的重组过程中多个基因座位组成的连锁群(甚至是染色

Actinomycetes and earthy-musty odorous compounds in brackish fishponds in Tianjin, China

The presence of the odorous compounds, 2-methylisoborneol (MIB) and geosmin, as well as causative microorganisms in brackish intensive cultivation fishponds in Tianjin, China that had a severe earthy-musty odor were evaluated. The results revealed that MIB was the primary odorous compound present in the Tianjin fishponds, with a concentration ranging from 0.53-5302.7 ng.L-1. Furthermore, the concentration of MIB was found to be closely correlated with the gross biomass of actinomycetes in the water, which ranged from 10.67-1528.24 x 10(6) cfu.ml(-1). Therefore, the sequences of the 16 SrRNA and morphological characteristics of the actinomycetes in the brackish fishponds were investigated. The results revealed that the actinomycetes in the brackish fishponds included 9 species of common and dominant actinomycetes belonging to 4 genera. Of these genera, Streptomyces were the dominant species, and Streptomyces, Nocardioides and Micromonospora were the most common species in the fishponds evaluated. Next, the ability of each of the isolated Streptomyces to produce MIB was measured under laboratory culture conditions. Streptomyces Sp2 was found to have a strong ability to produce MIB, which indicates that this strain may be the primary source of the earthy-musty odor reported in brackish intensive cultivation fishponds in Tianjin, China.

Differential screening and characterization analysis of the egg envelope glycoprotein ZP3 cDNAs between gynogenetic and gonochoristic crucian carp

Gynogenetic silver crucian carp, Carassius auratus gibelio, is an intriguing model. system. In the present work, a systemic study has been initiated by introducing suppression subtractive hybridization technique into this model system to identify the differentially expressed genes in oocytes between gynogenetic silver crucian carp and its closely related gonochoristic color crucian carp. Five differential cDNA fragments were identified from the preliminary screening, and two of them are ZP3 homologues. Moreover, the full length ZP3 cDNAs were cloned from their oocyte cDNA libraries. The length of ZP3 cDNAs were 1378 bp for gyno-carp and 1367 bp for gono-carp, and they can be translated into proteins with 435 amino acids. Obvious differences are not only in the composition of amino acids, but also in the number of potential O-linked oligosaccharide sites. In addition, gyno-carp ZP3 amino acid sequence has an unexpected higher identity value with common carp (83.5%) than that with the closely related gono-carp (74.7%). The unique homology may be originated from the ancient hybridization. Northern blot analysis confirmed that expression of the ZP3 gene occurred exclusively in the oocytes. Because O-linked oligosaccharides on ZP3 have been demonstrated to play very important roles in fertilization, it is suggested that the extra O-linked glycosylation sites may be related to the unique sperm-egg recognition mechanism in gynogenesis.

A new technique for boosting efficiency of silicon solar cells

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)

Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77 K and room temperature (RT), respectively. We observed the strong PL at 1.54 mu m at RT. The 1.54 mu m PL intensity changes with the variation of concentration of oxygen. The most intense PL at 77 K in a-SiOx:H (Er) corresponds to O/Si = 1.0 and at RT to O/Si = 1.76. Based on our results, we propose that Er ions contributed to PL come from O-rich region in the film. Er ions in Si-rich region have no relation with FL. Temperature dependence of the intensity of the 1.54 mu m line of the Er3+ transition displays a very weak temperature quenching in Er-doped hydrogenated amorphous Si. The PL intensity at 250 K is a little more one half of that at 15 K.

Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si

Proton-implanted and annealed p-type Si wafers were investigated by using both transmission electron microscopy and spreading resistivity probe. The novel pn junction [Li et al., Mat. Res. Sec. Symp, Proc. 396 (1996) 745], as obtained by using n-type Si subjected to the process as this work, was not observed in the p-type Si wafers in this work. A drop of superficial resistivity in the sample was found and is explained by the proposed models interpreting the novel pn junction. (C) 2000 Elsevier Science B.V. All rights reserved.

Effects of growth interruption on self-assembled InAs/GaAs islands

The effect of growth interruption on the InAs deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurements. InAs material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of PL peak energy. On the other hand, the PL peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. In this case, the noncoherent islands capture InAs material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. The variations in the PL intensity and line width are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon

Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted [001] silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2[110] type. The gettering of oxygen at the nanocavities was demonstrated. (C) 1998 American Institute of Physics. [S0003-6951(98)00620-2].