InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer

Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm.

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.

Kondo effect in a triangular triple quantum dots ring with three terminals

For a triangular triple quantum dots (TTQDs) ring with three terminals, when lowering one of the dot-lead coupling to realize the left-right (L-R) reflection symmetry coupling, the internal C-upsilon of the TTQDs is well preserved in the absence of many-body effect for the symmetric distribution of the dot-lead coupling on the molecular orbits. In the presence of Kondo effect, the decrement of one of the dot-lead couplings suppresses the inter-dot hopping. This happens especially for the coupled quantum dot (QD), which decouples with the other two ones gradually to form a localized state near the Fermi level As a result, the internal dynamic symmetry of the TTQDs ring is reduced to L-R reflection symmetry, and simultaneously, the linear conductance is lifted for the new forming molecular orbit near the Fermi level

Multi-channel effect of condensation flow in a micro triple-channel condenser

Multi-channel effect is important to understand transport phenomenon in phase change systems with parallel channels. In this paper, visualization studies were performed to study the multi-channel effect in a silicon triple-channel condenser with an aspect ratio of 0.04. Saturated water vapor was pumped into the microcondenser, which was horizontally positioned. The condenser was cooled by the air natural convention heat transfer in the air environment. Flow patterns are either the annular flow at high inlet vapor pressures, or a quasi-stable elongated bubble at the microchannel upstream followed by a detaching or detached miniature bubble at smaller inlet vapor pressures. The downstream miniature bubble was detached from the elongated bubble tip induced by the maximum Weber number there. It is observed that either a single vapor thread or dual vapor threads are at the front of the elongated bubble. A miniature bubble is fully formed by breaking up the vapor thread or threads. The transient vapor thread formation and breakup process is exactly symmetry against the centerline of the center channel. In side channels, the Marangoni effect induced by the small temperature variation over the channel width direction causes the vapor thread formation and breakup process deviating from the side channel centerline and approaching the center channel. The Marangoni effect further forces the detached bubble to rotate and approach the center channel, because the center channel always has higher temperatures, indicating the multi-channel effect. 

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

Hyperfine quenching of the 3s3p P-3(0) level in Mg-like ions

Hyperfine quenching rates of the 3s3p P-3(0) level in Mg-like ions were calculated using the GRASP2K package based on the multi-configuration Dirac-Hartree-Fock method. Valence and core-valence correlation effects were accounted for in a systematic way. Breit interactions and QED effects were included in the subsequent relativistic CI calculations. Calculated rates were compared with other theoretical values and with experiment, and a good agreement with the latest experimental value for the Al-27(+) ion (Rosenband et al 2007 Phys. Rev. Lett. 98 220801) was found. Furthermore, we showed in detail the contributions from Breit interaction and QED effects to concerned physical properties. Finally, electronic data were presented in terms of a general scaling law in Z that, given isotopic nuclear spin and magnetic moment, allows hyperfine-induced decay rates to be estimated for any isotope along the isoelectronic sequence.

Isospin dependence of nucleon (PF2)-P-3 superfluidity in asymmetric nuclear matter

We have investigated the isospin dependence of the neutron and proton (PF2)-P-3 superfluidity in isospin-asymmetric nuclear matter within the framework of the Brueckner-Hartree-Fock approach and the BCS theory. We show that the (PF2)-P-3 neutron and proton pairing gaps depend sensitively on isospin asymmetry of asymmetric nuclear matter. As the isospin asymmetry increases, the neutron (PF2)-P-3 superfluidity becomes stronger and the peak value of the neutron (PF2)-P-3 pairing gap increases rapidly. The isospin dependence of the proton (PF2)-P-3 superfluidity is shown to be opposite to the neutron one. The proton (PF2)-P-3 superfluidity becomes weaker at a higher asymmetry and it even vanishes at high enough asymmetries. At high asymmetries, the neutron (PF2)-P-3 superfluidity turns out to be much stronger than the proton one, implying that the neutron (PF2)-P-3 superfluidity is dominated in the highly asymmetric dense interior of neutron stars.

Three-body force effect on P-3 F-2 neutron superfluidity in neutron matter, neutron star matter, and neutron stars

We investigate the effect of microscopic three-body forces on the P-3 F-2 neutron superfluidity in neutron matter, beta-stable neutron star matter, and neutron stars by using the BCS theory and the Brueckner-Hartree-Fock approach. We adopt the Argonne V18 potential supplemented with a microscopic three-body force as the realistic nucleon-nucleon interaction. We have concentrated on studying the three-body force effect on the P-3 F-2 neutron pairing gap. It is found that the three-body force effect considerably enhances the P-3 F-2 neutron superfluidity in neutron star matter and neutron stars.

(PF2)-P-3 neutron superfluidity in neutron stars and three-body force effect

We investigate the (PF2)-P-3 neutron superfluidity in beta-stable neutron star matter and neutron stars by using the BCS theory and the Brueckner-Hartree-Fock approach. We adopt the Argonne V-18 potential supplemented with a microscopic three-body force as the realistic nucleon-nucleon interaction. We have concentrated on studying the three-body force effect on the (PF2)-P-3 neutron pairing gap. It is found that the three-body force effect is to enhance remarkably the (PF2)-P-3 neutron superfluidity in neutron star matter and neutron stars.

Interference Effects in Hyperfine Induced 2s2p P-3(0), P-3(2) -> 2s(2) S-1(0) Transitions of Be-like Ions

In this paper, we explored the characteristics of the interference effects between perturbative states in hyperfine induced 2s2p P-3(0), P-3(2) -> 2s(2) S-1(0) transitions of Be-like ions. It was found that the interference effects non-monotonically change with increasing atomic number Z in these two transitions. The strongest interference effect is near Z = 9 for 2s2p P-3(0), -> 2s(2) (1)S(0)transition and near Z = 7 for the other.

Evaluation of Effects of Bivalent Cations on the Formation of Purine-rich Triple-Helix DNA by ESI-FT-MS

The GGA triplet repeats are widely dispersed throughout eukaryotic genomes. (GGA)n or (GGT)n oligonucleotides can interact with double-stranded DNA containing (GGA:CCT)n to form triple-stranded DNA. The effects of 8 divalent metal ions (3 alkaline-earth metals and 5 transition metals) on formation of these purine-rich triple-helix DNA were investigated by electrospray ionization Fourier transform ion cyclotron resonance mass spectrometry (ESI-FT-MS). In the absence of metal ions, no triplex but single-strand, duplex, and purine homodimer ions were observed in mass spectra. The triple-helix DNA complexes were observed only in the presence of certain divalent ions. The effects of different divalent cations on the formation of purine-rich triplexes were compared. Transition-metal ions, especially Co2+ and Ni2+, significantly boost the formation of triple-helix DNA, whereas alkaline-earth metal ions have no positive effects on triplex formation. In addition, Ba2+ is notably beneficial to the formation of homodimer instead of triplex.

Efficient green electroluminescent cells using a poly(p-phenylene vinylene) multiblock copolymer sandwiched between carrier-transporting layers

With a newly synthesized poly(p-phenylene vinylene) (PPV) multiblock copolymer used in a triple-layer structure, efficient green light-emitting diodes with low driving voltage have been fabricated. The devices are turned on at 2.5 V, the brightness at 5 V is above 100 cd/m(2) and at 7 V is about 1650 cd/m(2), with an external quantum efficiency of about 1%. (C) 1998 Elsevier Science S.A. All rights reserved.

An investigation on ion solvation and ion association in a gel-type solid state polymer electrolyte

Ion salvation and ion association in polytriethylene glycol dimethacrylate (PTREGD)-LiClO4 gel-type polymer electrolytes were investigated. It was found that the fraction of solute existing as single ions (alpha(i)) decreases and that of triple ions (alpha(i)) increases linearly with increasing LiClO4 concentration, while for ion pairs, as the salt concentration increases, its fraction (alpha(p)) increases first and then falls down. The findings can be rationalized by the fact that the ionic conductance of the polymer electrolyte may be mainly contributed by triple ions and higher ionic aggregates with unequal numbers of positive and negative charges in the salt concentration range of practical significance, i.e. in the range of 0.5-1.5 mol/l. The temperature dependence of these fractions was also examined. In the case of tetraethylene glycol as the solvent, alpha(i) and alpha(p) increase as the temperature is raised, but alpha(t) decreases as the temperature increases from 25 degrees C to 85 degrees C. It seems that the increase of alpha(i) and alpha(p) results from the redissociation of triple ions at higher temperature, The same changing trend of those fractions is also observed when PEG(400) is used as the solvent.