Studies on the alkylation of isobutane with butene over WO3/ZrO2 strong solid acid (I) - Effect of preparation, load of WO3 and calcination temperature

A series of WO3/ZrO2 strong solid acid prepared under different conditions were studied. Their crystal structures, surface properties and acidities were determined by means of XRD, DTA-TG, H-2- TPR, Laser Raman and acidity measurements. The results revealed that ZrO2 in WO3/ZrO2 existed mainly in tetragonal phase, the addition of WO3 plays an important role to stabilize tetragonal phase of ZrO2 and thus the catalyst had a considerable surface area. WO3 in WO3/ZrO2 was dispersed and crystalized in WO3 crystalite on ZrO2 surface and partly reacted with ZrO2 to form the bond of Zr-O-W, which acts as the strong solid acid site. The catalytic properties of WO3/ZrO2 strong solid acid for alkylation of iso-butane with butene under the different conditions were investigated. They had a better reaction performance than other strong solid acids, a parallel relationship could be drawn between the catalytic activity and the amount of acid sites as well as the acidic strength of the catalysts.

Study on Mechanical Properties of Nanocrystal Surface Layer of an Aluminum Alloy

The nanocrystal surface layer of an aluminum alloy induced by High Speed Shot Peening (HSSP) was investigated in this paper. The results of nanoindentation experiment show that the elastic modulus and the hardness of nanocrystal surface layer increased,by 8% and 20%, respectively. The elastic modulus and the hardness appear to be independent of the distance from nanocrystalized surface and the process time.

The Size-Dependent Elastic Properties of Nanofilms with Surface Effects

Size-dependent elastic constants are investigated theoretically with reference to a nanoscale single-crystal thin film. A three-dimensional _3D_ model is presented with the relaxation on the surface of the nanofilm taken into consideration. The constitutive relation of the 3D model is derived by using the energy approach, and analytical expressions for the four nonzero elastic constants of the nanofilm are obtained. The size effects of the four elastic constants are then discussed, and the dependence of these elastic constants on the surface relaxation and the ambiguity in the definition of the thickness of the nanofilm are also analyzed. In addition, the elastic moduli of the nanofilm in two kinds of plane problem are obtained and discussed in the case of a special boundary condition.

The size-dependent bending elastic properties of nanobeams with surface effects

A theoretical model is presented to investigate the size-dependent bending elastic properties of a nanobeam with the influence of the surface relaxation and the surface tension taken into consideration. The surface layer and its thickness of a nanostructure are defined unambiguously. A three-dimensional (3D) crystal model for a nanofilm with n layers of relaxed atoms is investigated. The four nonzero elastic constants of the nanofilm are derived, and then the Young's modulus for simple tension is obtained. Using the relation of energy equilibrium, the size-dependent effective elastic modulus and effective flexural rigidity of a nanobeam with two kinds of cross sections are derived, and their dependence on the surface relaxation and the surface tension is analysed.

The effects of surface tension on the elastic properties of nano structures

In the absence of external loading, surface tension will induce a residual stress field in the bulk of nano structures. However, in the prediction of mechanical properties of nano structures, the elastic response of the bulk is usually described by classical Hooke’s law, in which the aforementioned residual stress was neglected in the existing literatures. The present paper investigates the influences of surface tension and the residual stress in the bulk induced by the surface tension on the elastic properties of nano structures. We firstly present the surface elasticity in the Lagrangian and the Eulerian descriptions and point out that even in the case of infinitesimal deformations the reference and the current configurations should be discriminated; otherwise the out-plane terms of surface displacement gradient, associated with the surface tension, may sometimes be overlooked in the Eulerian descriptions, particularly for curved and rotated surfaces. Then, the residual stress in the bulk is studied through the non-classical boundary conditions and used to construct the linear elastic constitutive relations for the bulk material. Finally, these relations are adopted to analyze the size-dependent properties of pure bending of Al nanowires. The present results show that surface tension will considerably affect the effective Young’s modulus of Al nanowires, which decrease with either the decrease of nanowires thickness or the increase of the aspect ratio.

Influence of thermal annealing on optical properties and surface morphology of NiOx thin films

NiOx thin films were deposited by reactive DC-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content of 5%. Thermal annealing effects on optical properties and surface morphology of NiOx, films were investigated by X-ray photoelectron spectroscopy, thermogravimetric analysis, scanning electron microscope and optical measurement. The results showed that the changes in optical properties and surface morphology depended on the temperature. The surface morphology of the films changed obviously as the annealing temperature increased due to the reaction NiOx -> NiO + O-2 releasing O-2. The surface morphology change was responsible for the variation of the optical properties of the films. The optical contrast between the as-deposited films and 400 degrees C annealed films was about 52%. In addition, the relationship of the optical energy band gap with the variation of annealing temperature was studied. (c) 2006 Elsevier B.V. All rights reserved.

Surface morphology and properties of zirconia thin films prepared at different deposition rates

ZrO2 thin films were prepared on BK7 glass substrates by electron beam evaporation deposition method. The influence of deposition rate varying from 1.2 to 6.3 nm s(-1) on surface morphology and other properties of ZrO2 films were examined. With increasing deposition rate, the surface defect density increased. The decrease in half width at full maximum in X-ray diffraction pattern with deposition rate indicates an increase in crystal dimension with increasing deposition rate. Electron beam deposited ZrO2 films are known to be inhomogeneous. From the change of the peak transmittance value, it can be deduced that the inhomogeneity of ZrO2 films strengthened gradually with increasing deposition rate. The type of surface defects changed from nodules to craters when the deposition rate was high enough.

Study of the surface plasma transmission properties of a Fabry-Perot resonator by numerical simulation

It is demonstrated with powerful evidence that the extraordinary transmission of a metallic grating is undoubtedly due to the excitation of standing surface plasma waves in the Fabry-Perot like resonator. This is the first time that the strong standing waves set up in the groove of a sub-wavelength double-layer grating (SWDG) for the surface plasma waves have been reported. Moreover, about 90% transmission is gained with an SWDG, more easily fabricated than ordinary metallic gratings, in the first peak of transmission spectrum.

Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAS(1 0 0)2 degrees substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality. (c) 2005 Elsevier B.V All rights reserved.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

The surfactant effect of isoelectronic indium doping during metalorganic chemical vapor deposition growth of cubic GaN on GaAs (1 0 0) substrates was studied. Its influence on the optical properties and surface morphology was investigated by using room-temperature photoluminescence (PL) and atomic force microscopy. It is shown that the sample with small amount of In-doping has a narrower PL linewidth, and a smoother surface than undoped cubic GaN layers. A slight red shift of the near-band-edge emission peak was observed. These results revealed that, for small TMIn flow rates, indium played the role of the surfactant doping and effectively improved the cubic GaN film quality; for large TMIn flow rates, the alloying formation of Ga1-xInxN might have occurred. (C) 2002 Elsevier Science B.V. All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting lasers (VCSEL's) are presented. The modulation properties both in analytic-equation calculation and in circuit model simulation are studied. The analytic-equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulation is simulated by using Pspice program respectively. The results of calculation and the simulation are in good agreement with each other. Experiment is performed to testify the circuit model.