Optical properties of alloy states in GaNxAs1-x (x < 0.01)

A set of GaNxAs1-x samples with a small content of nitrogen (N) (< 1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and photo reflectance technology. Temperature-and excitation-dependence of PL disclosed the intrinsic band gap properties of alloy states in GaNxAs1-x, which was extremely different from the N-related impurity states. At the same time, PR spectra were also studied in this work.

Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001

The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/GPa for the nitrogen-related features, and about 80 meV/GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN3 and NN4, and the isolated nitrogen state N-x. In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN1 and NN2, and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.

Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition

Crack-free In0.08Al0.25Ga0.67N quaternary films, with and without thick (> 1.5 mum) high-temperature-GaN (HTGaN) interlayer, have been grown on Si(1 1 1) substrates by a low-pressure metalorganic chemical vapor deposition (MOCVD) system. Mole fractions of In and Al in quaternary alloy layers are determined by Energy dispersive spectroscopy (EDS) and Rutherford backscattering spectrometry (RBS), which are recorded as similar to8% and similar to25-27%, respectively. High-resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RT-PL) results evidence the film's single crystal structure and the existence of local In- and/or Al-rich regions. Compared with GaN film grwon on Si(1 1 1) substrate, no crack is observed in the quaternary ones. Two explanations are proposed. First, mismatch-induced strain is relaxed significantly due to gradual changes of In concentration. Second, the weak In-N bond is likely to break when the sample is cooled down to the room temperature, which is expected to favor the releasing of thermal stress. (C) 2004 Elsevier B.V. All rights reserved.

Unusual carrier thermalization in a dilute GaAs1-xNx alloy

Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor

GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor. High-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence (RTPL) measurement is also used in characterizing. The influence of different Ga precursors on GaNAs quality is investigated. Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa). Nitrogen content of 5.688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278.5nm.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Wear mechanism map of uncoated HSS tools during drilling die-cast magnesium alloy

A wear mechanism map of uncoated high-speed steel (HSS) tools was constructed under the conditions of dry-drilling die-cast magnesium alloys. Three wear mechanisms appear in the map based on the microanalysis of drilled HSS tools by SEM, including adhesive wear, abrasive wear and diffusion wear. In the map, there exists a minor wear region which is called "safety zone". This wear mechanism map will be a good reference for choosing suitable drilling parameters when drilling die-cast magnesium alloys.

Microstructure and Elevated Temperature Properties of Die-cast AZ91-xNd magnesium alloy

The effect of Nd addition on the microstructure and mechanical properties of a die-cast AZ91 alloy was investigated in the present work. The results show that the die-cast AZ91 alloy is composed of alpha-Mg matrix and gamma-Mg17Al12 phase. Nd addition into the AZ91 alloy leads to the formation of rare earth containing intermetallic phase. Al4Nd phase forms when Nd content is less than or equal to 1.0 wt.%. Al2Nd phase appears simultaneously when Nd content reaches to 3.0 wt.%.

Influences of Gd on the microstructure and strength of Mg-4.5Zn alloy

Microstructure and mechanical properties of peak-aged Mg-4.5Zn-xGd (x=0, 0.5, 1.0 and 1.5 wt.%) alloys have been investigated. The results showed that the grain size of the alloys was refined gradually with increasing Gd. Mg5Gd and Mg3Gd2Zn3 phases were found in the Gd-containing alloys. The strengths were greatly improved with Gd additions, and the highest strength level was obtained in the Mg-4.5Zn-1.5Gd alloy, in which the ultimate tensile strength and yield strength were 231 MPa and 113 MPa, respectively.

Microstructures and mechanical properties of the Mg-4.5Zn-xGd (x = 0, 2, 3 and 5) alloys

Microstructures and mechanical properties of the peak-aged Mg-4.5Zn-xGd (x = 0, 2, 3 and 5 wt.%) alloys have been investigated. The results showed that grain size increased with increasing Gd. Phase analysis showed that MgZn2 phase was observed in the Mg-4.5Zn alloy. While with Gd additions, Mg3Gd and Mg3Gd2Zn3 phases formed, and the volume fraction of the Mg3Gd2Zn3 phase increased with increasing Gd. Tensile test results indicated that the optimal mechanical properties were obtained in the Mg-4.5Zn-2Gd alloy, and the ultimate tensile strength and yield strength were 215 MPa and 121 MPa, respectively.

Age hardening and mechanical properties of Mg-Gd-Er alloy

The Mg-8Gd-0.6Zr-xEr (x = 1, 3 and 5 mass%) alloys were prepared by casting technology, and the microstructures, age hardening behaviors and mechanical properties of alloys have been investigated. Microstructures of the alloys are characterized by the presence of rosette-shaped equiaxed grains. The age hardening behaviors and the tensile properties are enhanced by adding Er element. The maximum aged hardness of Mg-8Gd-0.6Zr-5Er alloy is 97, it is nearly 1.24 times higher than that of Er-free alloy.

Effect of Nd on the microstructure, mechanical properties and corrosion behavior of die-cast Mg-4Al-based alloy

Die-cast Mg-4Al-0.4Mn-xNd(x = 0, 1, 2, 4 and 6 wt.%) magnesium alloys were prepared successfully and influences of Nd on the microstructure, mechanical properties and corrosion behavior of the Mg-4Al-0.4Mn alloy have been investigated. The results showed that with the addition of Nd binary Al2Nd phase and Al11Nd3 phase. which mainly aggregated along the grain boundaries, were formed, and the relative ratio of above two phases was in correlation with the Nd content in the alloy. Meanwhile, the grain sizes were greatly reduced with the increasing Nd content. It was found that due to the addition of Nd both the tensile properties and corrosion resistance were improved substantially.

Electrolytic Deposition and Diffusion of Lithium onto Magnesium-9 Wt Pct Yttrium Bulk Alloy in Low-Temperature Molten Salt of Lithium Chloride and Potassium Chloride

The electrolytic deposition and diffusion of lithium onto bulk magnesium-9 wt pct yttrium alloy cathode in molten salt of 47 wt pct lithium chloride and 53 wt pct potassium chloride at 693 K were investigated. Results show that magnesium-yttrium-lithium ternary alloys are formed on the surface of the cathodes, and a penetration depth of 642 mu m is acquired after 2 hours of electrolysis at the cathodic current density of 0.06 A center dot cm(-2). The diffusion of lithium results in a great amount of precipitates in the lithium containing layer. These precipitates are the compound of Mg41Y5, which arrange along the grain boundaries and hinder the diffusion of lithium, and solid solution of yttrium in magnesium. The grain boundaries and the twins of the magnesium-9 wt pct yttrium substrate also have negative effects on the diffusion of lithium.