Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.

Red luminescence from self-assembled InAlAs AlGaAs quantum dots with bimodal size distribution

Red-emitting at about 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated, A double-peak structure of photoluminescence (PL) spectra from quantum dots was observed, and a bimodal distribution of dot sizes was also confirmed by an atomic force micrograph (AFM) image for uncapped sample. From the temperature and excitation intensity dependence of PL spectra, it is found that the double-peak structure of PL spectra from quantum dots is strongly correlated to the two predominant quantum dot families. Taking into account the quantum-size effect on the peak energy, it is proposed that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical to the statistical distribution of dot lateral size from the AFM image.

无水稀土氯化物催化下Diels-Alder���应的研究

本文研究了在无水氯化稀土催化下2－甲基呋喃和丙烯醛、呋喃和丙烯醛、呋喃和丙烯酸甲酯、2－甲基呋喃和丙烯酸甲酯，呋喃和丙烯酸乙酯以及丁二烯和顺丁烯二酸酐的Diels-Aldel反应，结果表明:（1）无水LnCl_3 (Cn=Nd, Eu, Gd, Yb)对2－甲苯呋喃和丙烯醛的反应有明显的催化作用，反应在温和条件下（25℃，常压无溶剂）顺利进行，不同LnCl_3催化活性按稀土元素原子序数递增而增加。其中，仅用0.008mol% YbCl_3就可催化反应达到85％的产品收率。本反应是连串反应，产物在LnCl_3催化下聚合成低聚物，适当降低催化剂用量是控制产物的聚合从而提高产品收率。与AlCl_3相比，YbCl_3的活性比AlCl_3高。降低反应温度也可以相对控制副反应。当丙烯醛和2－甲基呋喃的用量摩尔比为2:1时，反应能得到最好结果。用THF作溶剂时反应产率比甲苯作溶时要低得多。（2）丙烯醛和呋喃在常温下经CnCl_3催化可得到反应物摩尔比为1：1和2：1两种加成物，主要是2：1加成物。1：1加成物在LnCl_3存在下易聚合，在加热下易聚合。室温下易分角为原料。本反应在－40℃以CH_2Cl_2为溶剂YbCl_3催人时，只得到1：1加成物但收率不高.（3）LnCL_3对呋喃和丙烯酸甲酯的反应有良好的催化活性，当温度为40℃，YbCl_3 10mol%, 反应60小时可得到N/X = 17/27的产物2-carbomethoxy-7-oxabicyclo [2. 2. 1]nept-5-ene, 收率为80％。温度的降低有利地内型产物的生成，反应时间，催化剂用量对反应产物收率和立体选择性都有影响。（4）2－甲基呋喃和丙烯酸甲酯在YbCl_3催化下比（3）的反应更易进行。0℃时，6mol% YbCl_3反应67小时，收率可达88％，产物N/x达3.0。温度的降低有利于内型产物的生成，而反应时间和催化剂用量不影响产物立体选择性。（5）呋喃和丙烯酸乙酯 在10mol% YbCl_3催化下室温反应48小时，得到N／X＝Y_(1.47)的产物44％。温度的降低有利于内型产物的生成，反应时间相对处长有利于产品收率但不影响产品的立体选择性。此外，我们分离得到丙烯酸乙酯和YbCl_3的络合物，证明反应首先是通过YbCl_3和羟基氧的络合，然后再和双烯加成。（6）不同LnCl_3对丁二烯和顺丁烯二酸酐的反应具有不同催化活性，其活性按稀土元素原子序数递增而增加，即：LaCb < PrCl_3 , SmCl_3 < EuCl_3 < GdCl_3 < YbCl_3.

Effect of cryoprotectants on hatching rate of red seabream (Pagrus major) embryos

The objectives were to investigate the effect of cryoprotectants on the hatching rate of red seabream embryos. Heart-beat embryos were immersed in: five permeable cryoprotectants, dimethyl sulfoxide (DMSO), glycerol (Gly), methanol (MeOH), 1,2-propylene glycol (PG), and ethylene glycol (EG). in concentrations of 5-30% for 10, 30, or 60 min; and two non-permeable cryoprotectants: polyvinylpyrrolidone (PVP), and sucrose (in concentrations of 5-20% for 10 or 30 min). The embryos were then washed and incubated in filtered seawater until hatching occurred. The hatching rate of the embryos treated with permeable cryoprotectants decreased (P < 0.05) with increased concentration and duration of exposure. In addition, PG was the least toxic permeable cryoprotectant, followed by DMSO and EG, whereas Gly and MeOH were the most toxic. At a concentration of 15% and 30 min exposure, the hatching rate of the embryos immersed in PG was 93.3 +/- 7.0% (mean +/- S.D.), however. in DMSO. EG, Gly. and MeOH, it was 82.7 +/- 10.4, 22.0 +/- 5.7, 0.0 +/- 0.0, and 0.0 +/- 0.0%, respectively. Hatching rate of embryos treated with PVP decreased (P < 0.05) with the increase of concentration and exposure time, whereas for embryos treated with sucrose, there was no significant decrease in comparison with the control at the concentrations used. (C) 2008 Elsevier Inc. All rights reserved.

Long period grating for 3-5 mu m quantum-well infra-red photodetectors

By considering all possible high order diffracted waves, the authors calculate the coupling efficiency of long period gratings for 3-5 mu m quantum-well infra-red photodetectors (QWIPs) on the basis of the modal expansion model (MEM). A large coupling efficiency for 3-5 mu m QWIPs has been demonstrated. This greatly reduces the difficulties in fabricating 3-5 mu m grating coupled QWIPs and opens the way to fabricate high performance 3-5 mu m and two colour QWIPs image arrays.

Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode

We solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

国家自然科学基金

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.