Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0.14 W.A(-1) and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.

Novel triplexing-filter design using silica-based direction coupler and an arrayed waveguide grating

A new triplexing filter based on a silica direction coupler and an arrayed waveguide grating is presented. Using a combination of a direction coupler and an arrayed waveguide grating, a 1310-nm channel is multiplexed and 1490- and 1550-nm channels are demultiplexed for fiber-to-the-home. The direction coupler is used to coarsely separate the 1310-nm channel from the 1490- and 1550-nm channels. Subsequently, an arrayed waveguide grating is used to demultiplex the 1490- from 1550-nm channel. The simulated spectra show the 1-dB bandwidth of 110 nm for the 1310-nm channel and 20 and 20.5 nm for the 1490- and 1550-nm channels. The insertion loss is only 0.15 dB for 1310 nm and 5 dB for 1490 and 1550 nm. The crosstalk between the 1490- and 1550-nm channels was less than -35 dB. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3065508]

All-optical continuously tunable delay with a high linear-chirp-rate fiber Bragg grating based on four-wave mixing in a highly-nonlinear photonic crystal fiber

A scheme for hi-fi all-optical continuously tunable delay is proposed. The signal wavelength is converted to a desired idler wavelength and converted back after being delayed by a high linear-chirp-rate (HLCR) fiber Bragg grating (FBG) based on four-wave mixing (FWM) in a highly-nonlinear photonic crystal fiber (HN-PCF). In our experiment, 400 ps (more than 8 full width of half maximum, FWHM) tunable delay is achieved for a 10 GHz clock pulse with relative pulse width broaden ratio (RPWBR) of 2.08%. The power penalty is only 0.3 dB at 10(-9) BER for a 10 Gb/s 2(31)-1 pseudo random bit sequence (PRBS) data. (c) 2009 Elsevier B.V. All rights reserved.

Energy of a polaron in a wurtzite nitride finite parabolic quantum well

The effects of electron-phonon interaction oil energy levels of a. polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-space LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron hi a wurtzite nitride PQW are greater than that in all AlGaAs PQW. This indicates that the electron-phonon interaction in a wurtzite nitride PQW is not negligible.

Steady and transient optical properties of cubic InGaN epilayers

Photoluminescence (PL) and time-resolved PI, were employed to study the steady and transient optical properties of cubic InxGa1-xN epilayers grown by MBE. The results suggest that the PL transitions in InGaN epilayers are mainly from localized exciton states. The localization energies are estimated to be 60 meV, independent of In composition. The PL decay is characterized by a hi-exponential dependence. The fast process (50 ps at 12K) is related to the fast relaxation of excitons, while a slower contribution (200-270 ps at 12K) is attributed to the decay process of localized excitons.

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

Optical properties of Mn+ doped GaAs

The above work was supported by the national Basic Research Program of China (2006cb604904, 2006cb604908), the hi-tech R & D program of China (2006aa03z0408, 2006aa03z0404), the scientific research Fund of Central South University of Forstry and Technology.

后弯管波力发电浮标模型性能试验研究

为改进后弯管波力发电浮标的性能，对多种模型进行了新一轮试验研究。测定了它们的气室平均输出气流功率随波周期的变化曲线NA－T；试验了不同质量对性能的影响；测出了不同喷咀比ε的波高比Hi／Ho、压力比ΔPi／Ho和波能转换效率ηA。确定了最佳浮体——前方后园浮室后伸型后弯管浮体的尺寸、质量和性能参数。

天花粉蛋白抗HIV-1构效关系研究及机制探讨

天花粉蛋白（Trichosanthin，TCS）是从葫芦科植物括楼（TrichosanthesKiriloii）球根中提取的一种由247个氨基酸组成的I型核糖体失活蛋白（RibosomeInactivatingProtein，RIP）。TCS具有广谱的生物学和药学活性，包括抗肿瘤、免疫抑制、中期引产以及抗病毒活性，TCS还具有抗白血病和淋巴瘤的作用。TCS能够抑制HI卜1在急性感染的T淋巴细胞和慢性感染的巨噬细胞中的复制。TCS抗HIV的机制还不清楚，一般认为与R1（RibosolneInactivating）活性有关。TCS的毒副作用限制了它在抗HIV／AIDS临床上的进一步应用。人们期望通过改造或修饰，在保留TCS抗HIV活性的同时，降低其神经毒副作用及所引起的变态反应。因此，研究TCS的抗HIV-1作用机制及构效关系，有利于拓宽TCS的临床应用适应症，也对RIP类化合物基础研究和应用研究具有重要的指导作用。本论文在实验室己有研究工作的基础上，对TCS抗HIV-1作用、机制及构效关系进一步研究。首先，采用MTT比色法检侧TcS对人T淋巴细胞系C8166、HIV-1慢性感染细胞系H9／HIV-1IIIB细胞毒性作用以及采用台盼蓝染色法检测了TCs对刺激转化的人外周血单个核细胞（PeriphejralBloodMononuclearCen，PBMC）的细胞毒性作用；以合胞体形成抑制实验检测了TCS对实验株HIV-1ms诱导C8166细胞致细胞病变的抑制作用；以捕捉HIV-1p24抗原ELISA方法检测TCS对实验．株HIV-1IIIB在急性感染C8166，细胞和慢性感染Hg细胞中复制的抑制作用、临床分离株HIV-1KMO18在PBMC中复制的抑制作用、耐药株HIV-174v在C8166细胞中复制的抑制作用。其次，利用荧光实时定量RT-PCR检测了TCS对HIV-IIIB吸附和融合宿主细胞的抑制作用；采用高效液相色谱（HighPerformanceLiquidChromatograPhy，HPLC）检测了TCS脱HIV-IRNA腺嘿呤作用；另外还检测了TCS对病毒颗粒的直接杀伤作用、TCS对HIV感染和未感染细胞融合的抑制以及对HIV重组逆转录酶活性的抑制作用。最后，利用以蛋白工程技术构建的14个TCD突变体研究其抗HIV的构效关系，其中活性中心突变体：结果表明，TCS不仅能够有效抑制实验株HIV-1mB在C8166细胞中的复制和HIV-1ms诱导宿主细胞的病变作用，还能抑制临床分离株HIV-1KM018在PMBC中的复制和耐药株HIV-174v在C8166细胞中的复制，但TCS对HIV-1在慢性感染H9细胞中的复制无直接抑制作用。TCS不能抑制HIV-1进入宿主细胞；对感染细胞和未感染细胞的融合没有抑制作用；TCS也不能抑制HIV-1重组逆转录酶活性；TCS对病毒颗粒的直接杀伤作用不大；但TCS能够使裸露的HIV-1RNA脱腺漂呤，可能TCS的脱缥岭活性或其它酶活性直接损伤病毒或者病毒感染细胞的核酸，而胞质腺嗦岭含量的增高则可以导致线粒体膜电位的降低、细胞色素C的释放、活性氧的增加和抗凋亡因子表达的下降，结果使感染细胞更多的凋亡，这可能是TCS抗HIV的一个机制。结果也表明，活性中心突变体TCSM（120-123）与TCSE160A/E189A，在失去绝大部分R工活"性的同时，也几乎完全失去抗HIV活性。、而另一个活性中心突变体TCSR122G，RI活性下降1的倍，却仍保留一定的抗HIV活性。TcSC末端删除突变体（TCSC2，TCSC4和TCSC14）抗HIV活性的下降（1.4-4.8倍）与其R1活性呈平行下降（1.2-3.3倍）。这些结果表明TCS抗HIV-1活性与其R1活性显著相关，但似乎又不是唯一的决定因素，因为我们发现二个分别在C末端加上末端19个氨基酸延伸肤或KDEL信号肤的突变体TCS饥触与TCSKDEL，虽然保留全部的RI活性，但却几乎完全失去抗HIV活性，表明有其它机制介入了TCS的抗HIV-1活性。TCS抗原决定簇位点突变后对TCS抗HIV-1活性没有显著影响，但当在抗原决定簇突变体所引入的Cys残基上加上PEG漱后，这些突变体则显著降低了抗HIV-1的活性。

Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD

The deep centers in AlGaAs/GaAs graded index-separate confinement heterostructure single quantum well (GRIN-SCHSQW) laser structures grown by MBE and MOCVD have been investigated using deep level transient spectroscopy (DLTS) technique, The majority and minority carrier DLTS spectra show that the deep (hole and electron) traps (Hi and E3), having large capture cross sections and concentrations, are observed in the graded n-AlxGa1-xAs layer of laser structures in addition to the well-known DX centers. For laser structures grown by MBE, the deep hole trap H1 and the deep electron trap E3 may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the n-AlxGa1-xAs layer with x = 0.20-0.43. For laser structures grown by MOCVD, the deep electron trap E3 may be spatially localized in the n-AlxGa1-xAs layer with x = 0.18-0.30, and the DX center may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the AlxGa1-xAs layer with x = 0.22-0.30.

Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers

We numerically investigate four-wave-mixing (FWM) based multichannel wavelength conversion for amplitude-modulated signals, phase-modulated signals, together with mixed amplitude and phase modulated signals. This paper also discusses the influence of stimulated Brillouin scattering (SBS) effects on high-efficiency FWM-based wavelength conversion applications. Our simulation results show that DPSK signals are more suitable for FWM-based multichannel wavelength conversion because the OOK signals will suffer from the inevitable datapattern-dependent pump depletion. In future applications, when the modulation format is partially upgraded from OOK to DPSK, the influence of OOK signals on the updated DPSK signals must be considered when using multichannel wavelength conversion. This influence becomes severe with the increase of OOK channel number. It can be concluded that DPSK signals are more appropriate for both transmission and multichannel wavelength conversion,especially in long haul and high bit-rate system.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.

High brightness AlGaInP orange light emitting diodes

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.

requirement analysis of information and knowledge management in postmodern perspective on curriculum

National Basic Research Program of China; Chinese Academy of Sciences; Information Society Technologies; Institute of Computing Technology, Chinese Academy of Sciences; Zhuhai National Hi-tech Industrial Development Zone