Damage analysis of tetragonal perovskite structure ceramics implicated by asymptotic field solutions and boundary conditions

Cracking of ceramics with tetragonal perovskite grain structure is known to appear at different sites and scale level. The multiscale character of damage depends on the combined effects of electromechanical coupling, prevailing physical parameters and boundary conditions. These detail features are exhibited by application of the energy density criterion with judicious use of the mode I asymptotic and full field solution in the range of r/a = 10(-4) to 10(-2) where r and a are, respectively, the distance to the crack tip and half crack length. Very close to the stationary crack tip, bifurcation is predicted resembling the dislocation emission behavior invoked in the molecular dynamics model. At the macroscopic scale, crack growth is predicted to occur straight ahead with two yield zones to the sides. A multiscale feature of crack tip damage is provided for the first time. Numerical values of the relative distances and bifurcation angles are reported for the PZT-4 ceramic subjected to different electric field to applied stress ratio and boundary conditions that consist of the specification of electric field/mechanical stress, electric displacement/mechanical strain, and mixed conditions. To be emphasized is that the multiscale character of damage in piezoceramics does not appear in general. It occurs only for specific combinations of the external and internal field parameters, elastic/piezoelectric/dielectric constants and specified boundary conditions. (C) 2002 Published by Elsevier Science Ltd.

采用分布式压电驱动器升力面的颤振主动抑制

对采用分布式压电驱动器升力面的颤振主动抑制进行了理论与试验研究。应用LQG最优控制法设计了主动控制律，在控制律降阶时提出了平衡实现与LK法结合使用的新途径，在对不定常气动力进行有理函数拟合时对LS法进行了改进。试验中利用激光测速仪非接触测量模型的速度响应并在地面共振试验中用压电驱动器激振模型。颤振风洞试验结果表明，理论计算合理并与试验结果吻合良好。

压电材料椭圆切口的力学分析

在线性压电本构方程框架下，用复势函数方法对椭圆切口模型进行了精确的数值计算。完整地考虑了各向异性力电耦合效应以及切口内不同电介质的介电性质。给出了切口内部不同介电性质对压电材料内部应力的影响。指出了Sosa文章里的一些计算错误。由于现在文献中很小有关于电导通边界条件政府解的数值结果，所以本文同时提供了不同电边界条件下的理论解的数值结果。最后通过最小势能原理建立了8结点有限元模型，对椭圆切口问题进行了计算并与理论解进行了仔细比较。

Piezoelectricity of ZnO films prepared by sol-gel method

ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.

线性压电材料的有限元分析

本文利用线性压电学理论，编制了线性压电材料四结点等参有限元程序，进行了校核，并对PZT-5A材料压电智能元件和压电材料标准断裂试进行了计算，计算包括：①采用实际工程应用的压电智能元件尺寸，计算了元件的压电响应；并针对元件内部电极尖端区域容易引起破坏的现象，计算了该区域的奇异应力、应变场及电场。②计算了加力和加电两种情况下压电材料标准断裂试件应力强度因子影响系数F_I和电位移强度因子影响系数F_D。裂纹面边界条件采用D-P条件，试件包括紧凑拉伸标准试件和三点弯曲标准试件。③应用Lagrange乘子法将Parton裂纹边界条件加于有限元程序中，计算了上述两种标准断裂试件的F_I和F_D，计算结果与采用D-P裂纹边界条件的计算结果有很大差异。

带压电陶瓷片梁的力学分析和二类变量广义变分原理

对于采用贴有压电陶瓷片作为作动元件的智能结构，在进行自适应控制时，往往要分析压电陶瓷片所引起的结构中的应力、应变和位移。对于带有压电陶瓷片梁的力学分析，文献中大多采用Euler-Bernoulli模型，即不考虑梁中的剪力，且假定梁沿厚度方向满足直法线假定。考虑到压电陶瓷片对梁的作用主要是通过粘贴层以剪力的形式传递到梁上，梁截面上的剪应力和剪应变一般很大，其影响不能忽略。本文采用Hellinger-Reissner二类变分广义余能原理，导出考虑梁截面上剪应力和剪应变影响的方程式，其中采用吉尔法求解非齐次常微分方程组。并将求得的解与相同条件的有限元解进行比较。结果证明该方法很有效。本文还对二类广义变分法进行了一般的讨论，发现，在使用二类广义变分法求解时，随着应力和位移所取项数的增加，结果有时反而变坏。并对二类广义变分法的使用提出了一些建议。

Energy Functions And Basic Equations For Ferroelectrics

Energy functions (or characteristic functions) and basic equations for ferroelectrics in use today are given by those for ordinary dielectrics in the physical and mechanical communications. Based on these basic equations and energy functions, the finite element computation of the nonlinear behavior of the ferroelectrics has been carried out by several research groups. However, it is difficult to process the finite element computation further after domain switching, and the computation results are remarkably deviating from the experimental results. For the crack problem, the iterative solution of the finite element calculation could not converge and the solutions for fields near the crack tip oscillate. In order to finish the calculation smoothly, the finite element formulation should be modified to neglect the equivalent nodal load produced by spontaneous polarization gradient. Meanwhile, certain energy functions for ferroelectrics in use today are not compatible with the constitutive equations of ferroelectrics and need to be modified. This paper proposes a set of new formulae of the energy functions for ferroelectrics. With regard to the new formulae of the energy functions, the new basic equations for ferroelectrics are derived and can reasonably explain the question in the current finite element analysis for ferroelectrics.

压电驱动器的气动弹性应用

随着压电智能材料与结构的发展,压电驱动器在气动弹性控制领域占据重要地位.使用压电驱动器控制翼面变形,利用而不是抵抗气动弹性效应可以控制升力、力矩以及它们的分布.采用基本相同的智能结构翼面控制系统,根据不同的控制目标需求,使用压电智能材料驱动器可以达到多种目的,包括静态的形状控制与动态的颤振抑制、抖振控制与阵风响应控制.静态控制方面例如改变翼面形状获得附加空气动力以增加升力、提供横滚力矩、改变升力分布以减小诱导阻力或减小翼根弯矩等;动态控制例如利用改变翼面形状产生的附加空气动力作为控制载荷,改变气动弹性系统的耦合程度,根据控制效果要求可作为气动阻尼、气动刚度或气动质量.这种控制方法可以减轻结构重量,提高操纵效率,扩大飞行包线,提高材料利用率,已成为可变形飞行器的重要研究内容.本文主要阐述压电驱动器气动弹性应用的动机与机理、发展与成就以及问题与展望.

Application of sample-and-hold circuits in the laser frequency-shifting

A new method of frequency-shifting for a diode laser is realized. Using a sample-and-hold circuit, the error signal can be held by the circuit during frequency shifting. It can avoid the restraint of locking or even lock-losing caused by the servo circuit when we input a step-up voltage into piezoelectric transition (PZT) to achieve laser frequency-shifting.

室温下稳定的多波长掺铒光纤激光器的研究

通过在线形谐振腔中引入一段缠绕在压电陶瓷上的单模光纤作为正弦相位调制器，使得激射波长的损耗不固定，抑制由于掺铒光纤的均匀展宽效应引起的模式竞争，从而避免了在室温下不稳定的单波长激射，实现了多波长掺铒光纤激光器的稳定输出。为了获得平坦的多波长输出，在谐振腔里使用了一个损耗峰位于1530nm处的长周期光纤光栅，以获得较为平坦的增益谱。通过两个3dB耦合器制成的反射型梳状滤波器的滤波作用，实验中观察到稳定的多波长激射，相邻波长间隔约为0．45nm。中心9个波长的输出功率平坦度为10dB，边模抑制比大于25dB。

大行程高分辨率微定位机构的设计分析

压电驱动器的位移输出能力有限，因此通常借助于柔性机构对其位移量进行放大。对常用的柔性放大机构的性能进行了分析。提出一种柔性八杆放大机构，并对其进行有限元分析和理论计算。为了提高放大率，提出两级串连式机构。机构整体具有结构紧凑、放大效率较高的优点。

五自由度纳米级定位精度机构的研制

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用压电陶瓷作为驱动元件，柔性导向机构实现平移及转动功能。整个工作台可由整块金属材料通过线切割加工制成，实现一体化加工，而且结构紧凑。并给出导向机构刚度计算公式及设计实例。

五自由度纳米级定位工作台的设计研究

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用柔性导向机构实现平移及转动功能，采用压电陶瓷作为驱动元件，外置纳米级电容传感器作为位移量测量反馈元件，采用数字PID控制方法，可以实现纳米级精度的定位。给出了多种形式柔性导向机构刚度计算公式及设计实例。

Design and control of an ultraprecision stage used in grating tiling

In petawatt laser system, the gratings used to compose pulse compressor are very large in size which can be only acquired currently by arraying small aperture gratings to form a large one instead, an approach referred to as grating tiling. Theory and experiments have demonstrated that the coherent addition of multiple small gratings to form a larger grating is viable, the key technology of which is to control the relative position and orientation of each grating with high precision. According to the main factors that affect the performance of the grating tiling, a 5-DOF ultraprecision stage is developed for the grating tiling experiment. The mechanism is formed by serial structures. The motion of the mechanism is guided by flexure hinges and driven by piezoelectric actuators and the movement resolution of which can achieve nanometer level. To keep the stability of the mechanism, capacitive position sensors with nanometer accuracy are fixed on it to provide feedback signals with which to realize closed-loop control, thus the positioning precision of the mechanism is within several nanometers range through voltage control and digital PID algorithm. Results of experiments indicate that the performance of the mechanism can meet the requirement of precision for grating tiling.}

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.