Effect of polymer chain structure and chain distance on luminescent efficiency

Three kinds of PPV-based copolymers were synthesized and characterized. Their luminescent properties were investigated and discussed by PL spectrum, and time-dependence luminescent spectrum in film and solution stare. The results show that in the range of our study, the PL intensity and lifetime of luminescent decay increase with the increasing length of flexible segments and the solution diluting, indicating the tendency of the increase of luminescent efficiency.

Probing single-molecule by surface-enhanced resonance Raman scattering with linearly and circularly polarized laser

Rhodamine 6G (R6G) was incubated in silver sols with different low concentrations and its surface-enhanced resonance Raman scattering (SERRS) spectra, excited by linearly and circularly polarized light, respectively, were studied. At the single-molecule level the SERRS spectra were recorded in 10(-13) M dye colloidal solution. Spectral inhomogeneous behaviors from single-molecule were observed such as spectral polarization, spectral diffusion and intensity fluctuations of vibrational lines. Difference between SERRS spectra of R6G excited by linearly and circularly polarized light and the effect of the polarizing angle of Raman signal relative to the slit of spectrograph on the Raman spectral polarization were analyzed and measured experimentally. Circularly polarized laser and the correction of the polarizing angle of Raman signal are necessary to avoid fake results in the measuring of Raman spectral of single-molecule, which was not noticed in initial papers. (c) 2005 Elsevier B.V. All rights reserved.

热畸变对单板条热容激光器输出的影响

开展了激光二极管(LD)抽运的全固态热容激光器的理论与实验研究, 数值模拟了在热容工作条件下侧面抽运的Nd:YAG板条激光器的热透镜效应, 分析了热透镜效应对激光输出的影响, 并进行了相应的实验论证。实验中采用的晶体尺寸为57 mm×40 mm×4 mm, 激光二极管阵列的抽运峰值功率为12 kW, 重复频率为1 kHz, 占空比为20%, 为了获得较高的增益, 将抽运光通过光学系统进行聚焦, 抽运光在晶体侧面的光斑大小为15 mm×57 mm。实验中观察了1 s内的脉冲能量输出的波动情况, 在开始工作的

The intensity distribution and thermal stability of InnoSlab laser

Partially end-pumped slab laser is an innovative solid state laser, namely InnoSlab. Combining the hybrid resonator with partially end-pumping, the output power can be scaled with high beam quality. In this paper, the output intensity distributions are simulated by coordinate transformation fast Fourier transform (FFT) algorithm, comparing the thermal lens influence. As the simulated curves showed, the output mode is still good when the thermal lens effect is strong, indicating the good thermal stability of InnoSlab laser. Such a new kind of laser can be designed and optimized on the base of this simulation.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Preparation and characterization of the stable nc-Si/a-Si : H films

High-quality nc-Si/a-Si:H diphasic films with improved stability were prepared by using the plasma-enhanced chemical vapor deposition technology. In comparison with typical amorphous silicon, the diphasic silicon films possess higher photoconductivity (two orders larger than that of the amorphous silicon film) and fairly good photosensitivity(the ratio of the photo-to dark-conductivity is about 10) and higher stability (the degradation of the photoconductivity is less than 10% after 24h long light soaking with 50 mW/cm(2) intensity at room temperature). In addition, the diphasic silicon film has a better light spectra response in the longer wavelength range. The improvement in photoelectronic properties may be attributed to: the existence of the disorder within the amorphous matrix, which breaks the momentum selection rule in the optical transition and, consequently, results in the large light absorption coefficient and high photosensitivity; the improved medium range order and low gap states density. Excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and reduces the subsequent defect creation.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Recombinant protein of heptad-repeat HR212, a stable fusion inhibitor with potent anti-HIV action in vitro

HR212, a recombinant protein expressed in Escherichia coli, has been previously reported to inhibit HIV-1 membrane fusion at low nanomolar level. Here we report that HR212 is effective in blocking laboratory strain HIV-1IIIB entry and replication with EC50 values of 3.92±0.62 and 6.59±1.74 nM, respectively, and inhibiting infection by clinic isolate HIV-1KM018 with EC50 values of 44.44±10.20 nM, as well as suppressing HIV-1- induced cytopathic effect with an EC50 value of 3.04±1.20 nM. It also inhibited HIV-2ROD and HIV-2CBL-20 entry and replication in the μM range. Notably, HR212 was highly effective against T20-resistant strains with EC50 values ranging from 5.09 to 7.75 nM. Unlike T20, HR212 showed stability sufficient to inhibit syncytia formation in a time-of-addition assay, and was insensitive to proteinase K digestion. These results suggest that HR212 has great potential to be further developed as novel HIV-1 fusion inhibitor for treatment of HIV/ AIDS patients, particularly for those infected by T20-resistant variants.

High quality hydrogenated amorphous silicon films with significantly improved stability

High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Optimized logarithmic phase masks used to generate defocus invariant modulation transfer function for wavefront coding system

In a previous Letter [Opt. Lett. 33, 1171 (2008)], we proposed an improved logarithmic phase mask by making modifications to the original one designed by Sherif. However, further studies in another paper [Appl. Opt. 49, 229 (2010)] show that even when the Sherif mask and the improved one are optimized, their corresponding defocused modulation transfer functions (MTFs) are still not stable with respect to focus errors. So, by further modifying their phase profiles, we design another two logarithmic phase masks that exhibit more stable defocused MTF. However, with the defocus-induced phase effect considered, we find that the performance of the two masks proposed in this Letter is better than the Sherif mask, but worse than our previously proposed phase mask, according to the Hilbert space angle. (C) 2010 Optical Society of America

辐照诱导的人正常肝细胞系HL-7702细胞远后效应

近年来，放射治疗在肿瘤治疗中的作用受到了越来越多的重视，放疗技术和手段的迅速发展为人们选择放疗创造了更多的机会[1]。放疗是利用电离辐射对细胞，特别是细胞中的遗传物质DNA的损伤作用，诱发病灶部位不正常细胞的凋亡和坏死来治疗肿瘤的。即使制定了周密的放疗方案和计划，放疗过程中难免也会对正常组织和细胞造成一定程度的损伤，而且辐射的远后效应和旁效应的发现，也使得放射治疗肿瘤的安全性受到了很大的关注。要想充分发挥放疗的优势，而又使其对人体正常组织的毒副作用尽可能降低，就必须搞清楚电离辐射对细胞造成的各种损伤的类型及其分子机理。自从电离辐射的远后效应和旁效应被发现以来就一直是辐射生物医学领域的研究热点，国内外的科研人员进行了大量的实验试图解释它们的本质，可是几十年来相关领域的研究一直局限于细胞学的水平，在向分子水平前进的道路上遇到了巨大的困难[2,3]。目前对于电离辐射远后效应和旁效应的研究是相对独立进行的，很少有探讨二者相互关系的论文发表。本文试图在总结前人科研成果并结合对自己所取得的实验数据进行分析的基础上对电离辐射的远后效应、旁效应、基因不稳定性与电离辐射所产生的活性氧自由基的关系进行初步的探讨。实验方法与结果： 1.用X射线辐照人正常肝细胞系HL-7702细胞，运用胞质分离阻滞微核实验检测细胞微核率，AnnexinV-FITC细胞凋亡检测试剂盒检测细胞凋亡率，细胞微核率和凋亡率随着辐照剂量的增加而显著增加。X射线照射后细胞继续传代培养，第七代时不同剂量辐照后子代细胞微核率和凋亡率同未辐照细胞的微核率和凋亡率相比已经没有明显区别。对不同剂量辐照后传代七代的细胞再次照射2.5Gy相同的剂量，发现受初次不同剂量辐照的细胞其微核率和凋亡率再次出现明显差异，初次辐照剂量高的细胞再次相同剂量辐照后的微核率和凋亡率也高。 2.对不同剂量X射线辐照后的细胞继续传代到第十五代时用H2O2浓度为1ul/ml的培养基处理15min，发现受初次不同剂量辐照的细胞其微核率再次出现比较明显差异，初次辐照剂量高的细胞H2O2处理后的微核率也高。 3.对受到不同剂量X射线辐照的人正常肝细胞存活后代进行二次辐照，分两组分别给予1.5GyX射线和1Gy碳离子束辐照，并检测二次辐照后细胞的微核率，发现重离子束二次辐照后并不像X射线一样可以诱发初次X射线辐照造成的损伤信息的表达，而只是表现出二次重离子辐照所造成的损伤。结论： 1.X射线辐照导致了HL-7702细胞基因组不稳定性这一辐射远后效应，X射线二次辐照辐照存活细胞的子代细胞可以诱发辐射的远后效应（如基因组不稳定性）明显的表现； 2.X射线辐照导致的HL-7702细胞后代基因组不稳定性，可以通过H2O2处理而得以诱发，揭示电离辐射过程中产生的氧自由基可能与辐射的远后效应存在密切的联系； 3.电离辐射产生的ROS在诱发细胞产生微核中具有重要的作用，但是并非唯一的影响因素。 4.X射线和12C6+重离子束辐照后存活细胞的后代中的细胞损伤类型可能存在着本质上的区别

Study on conical columns with different conical angles for semi-preparative liquid chromatography

The dynamic flow profiles and separation performances in conically shaped preparative liquid chromatographic columns (inlet i.d. larger than outlet i.d.) with three different angles (7, 10 and 15degrees) were studied and compared with cylindrical column of the same length and internal volume. The shapes of dynamic flow profiles were studied by on-column visualization method. The transparent chromatographic columns made of polymethyl methacrylate (PMMA), packed with C-18 bonded silica, were immerged into a cubic pool filled with glycerol to eliminate the cylindrical and conical lens effect. The flow profiles of colored iodine solution in the columns were observed clearly using cyclohexane as mobile phase since the refractive indices of C-18, column wall and the mobile phase are very close. In the conical column of 15degrees (20-7 mm i.d.) the mobile phase in the central region migrated slower than in wall region as it moved toward the column outlet, while in the conical column of 7degrees (17-11 mm i.d.) the mobile phase in the central region migrated faster than in wall region just like in cylindrical column. We found that a plug-like flow profile was generated in the conical column of 10degrees (18-9 mm i.d.) during the whole migration process. A carmine and brilliant blue mixture was used as a probe to test the separation ability of the columns. The resolutions of the two compounds on the conical column of 7, 10, 15degrees and on the cylindrical column were 0.6, 1.57, 1.29 and 0.8, respectively. (C) 2003 Elsevier B.V. All rights reserved.