LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Quantum confinement effect in thin quantum wires

The electronic states and optical transition properties of three semiconductor wires Si? GaAs, and ZnSe are studied by the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for wires of square cross section with width from 2 to 5 (root 2a/2), where a is the lattice constant. It is found that these three kinds of wires have different quantum confinement properties. For Si wires, the energy gap is pseudodirect, and the wave function of the electronic ground state consists mainly of four bulk Delta states. The optical transition matrix elements are much smaller than that of a direct transition, and increase with decreasing wire width. Where the width of wire is 7.7 Angstrom, the Si wire changes from an indirect energy gap to a direct energy gap due to mixing of the bulk Gamma(15) state. For GaAs wires. the energy gap is also pseudodirect in the width range considered, but the optical transition matrix elements are larger than those of Si wires by two orders of magnitude for the same width. However, there is no transfer to a direct energy gap as the wire width decreases. For ZnSe wires, the energy gap is always direct, and the optical transition matrix elements are comparable to those of the direct energy gap bulk semiconductors. They decrease with decreasing wire width due to mixing of the bulk Gamma(1) state with other states. All quantum confinement properties are discussed and explained by our theoretical model and the semiconductor energy band structures derived. The calculated lifetimes of the Si wire, and the positions of photoluminescence peaks, are in good agreement with experimental results.

Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections

We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.

Photoluminescence of GaInP under high pressure

Photoluminescence of GaInP under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear relationship between lattice constant and hydrostatic pressure. The Gamma valleys of ordered GaInP rise more slowly than that of the disordered one and the relationship between the band gap and the pressure can not be explained in the same way. Taking into account the interactions between the Gamma valley and the folded L valleys, as well as, the X valleys, the experimental pressure dependences of the band gap of ordered GaInP epilayers are calculated and fitted quite well using first order perturbation theory. The results indicate that simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure

Photoluminescence of GaInP epilayers under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear dependence of lattice constant on the hydrostatic pressure. The Gamma valleys of ordered GaInP epilayers rise slower than that of the disordered one. Considering the interactions between the Gamma valley and folded L and X valleys, the pressure dependence of the band gap of ordered GaInP is calculated and fitted. The results demonstrate that not only ordering along [111] directions but also sometimes simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer

We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115 K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.

MOCVD growth of cubic GaN: Materials and devices

Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and green LEDs. Cubic-phase GaN films were grown on GaAs (100) substrates by MOCVD. Growth conditions were optimized to obtain pure cubic phase GaN films up to a thickness of 4 mum. An anomalous compressive strain was found in the as-grown GaN films in spite of a smaller lattice constant for GaN compared with that of GaAs substrates. The photoluminescence FWHM of high quality InGaN epilayers was less than 100 meV The InGaN/GaN heterostructure blue LED has intense electroluminescence with a FWHM of 20 nm.

Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

Raman scattering measurement has been used to study the residual strains in the thin 3C-SiC/Si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (CVD)growth. Two methods have been exploited to figure our the residual strains and the exact LO bands. The final analyzing results show that residual strains exist in the 3C-SiC epilayers. The average stress is 1.3010 GPa, and the relative change of the lattice constant is 1.36 parts per thousand. Our measurements also show that 3C-SiC phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Crystallographic and electrochemical characteristics of Ti-Zr-Ni-Pd quasicrystalline alloys

Ti45Zr35Ni20-xPdx (x = 0, 1, 3, 5 and 7, at%) alloys were prepared by melt-spinning. The phase structure and electrochemical hydrogen storage performances of melt-spun alloys were investigated. The melt-spun alloys were icosahedral quasicrystalline phase, and the quasi-lattice constant increased with increasing x value. The maximum discharge capacity of alloy electrodes increased from 79 mAh/g (x = 0) to 148 mAh/g (x = 7). High-rate dis-chargeability and cycling stability were also enhanced with the increase of Pd content. The improvement in the electrochemical hydrogen storage characteristics may be ascribed to better electrochemical activity and oxidation resistance of Pd than that of Ni.

Crystallographic and electrochemical characteristics of icosahedral quasicrysyalline Ti45-xZr35-xNi17+2xCu3 (x=0-8) powders

Ti45--xZr35--xNi17+2rCU3 (x=0, 2, 4, 6 and 8) icosahedral quasicrystalline phase (I-phase) alloy powders are synthesized by mechanical alloying and subsequent annealing techniques, and the crystallographic and electrochemical characteristics are investigated. The alloy powders are I-phase, and the quasi-lattice constant decreases with increasing x value. The maximum discharge capacity of the I-phase alloy electrodes first increases and then decreases with increasing x value, and the Ti39Zr26Ni29Cu3 I-phase electrode exhibits the highest discharge capacity of 274 mAh g(--1). The high-rate dischargeability at the discharge current density of 240mA g(--1) increases from 55.31 % (x= 0) to 74.24% (x= 8). Cycling stability also increases with increasing x value. The improvement in electrochemical characteristics may be ascribed to the added nickel, which not only improves the electrochemical activity, but also makes the alloy more resistant to oxidation.

Crystallographic and electrochemical characteristics of Ti45Zr35Ni17Cu3 quasicrystalline alloy ball-milled with nickel powder

Crystallographic and electrochemical characteristics of ball-milled Ti45Zr35Ni17Cu3 +xNi (x = 0, 5, 10, 15 and 20 mass%) composite powders have been investigated. The powders are composed of amorphous, I- and Ni-phases when x increases from 5 to 20. With increasing x, the amount of Ni-phase increases but the quasi-lattice constant decreases. The maximum discharge capacity first increases as x increases from 0 to 15 and then decreases when x increases further from 15 to 20. The high-rate dischargeability and cycling stability increase monotonically with increasing x. The improvement of the electrochemical characteristics is ascribed to the metallic nickel particles highly dispersed in the alloys, which improves the electrochemical kinetic properties and prevents the oxidation of the alloy electrodes, as well as to the mixed structure of amorphous and icosahedral quasicrystal line phases, which enhances the hydrogen diffusivity in the bulk of the alloy electrodes and efficiently inhibits the pulverization of the alloy particles.

Nitrate-citrate combustion synthesis and properties of Ce1-xSmxO2-x/2 solid solutions

A nitrate-citrate combustion route to synthesize nanocrystalline samarium-doped ceria powders for solid electrolyte ceramics is presented. This route is based on the gelling of nitrate solutions by the addition of citric acid and ammonium hydroxide, followed by an intense combustion process due to an exothermic redox reaction between nitrate and citrate ions. The influence of ignition temperature on the characteristics of the powders was studied. The change of the crystal structure with the content of doped Sm was investigated. High temperature X-ray, and Raman scattering were used to characterize the sample. The lattice constant and unit volume increase with doping level and increasing temperature. Dense ceramic samples prepared by uniaxial pressing and sintering in air were also studied.

Electrochemical scanning tunneling microscopy and electrochemical quartz crystal microbalance study of the adsorption of phenanthraquinone accompanied by an electrochemical redox reaction on the Au electrode

In situ electrochemical scanning tunneling microscopy (ECSTM) and an electrochemical quartz crystal microbalance (EQCM) have been employed to follow the adsorption/desorption processes of phenanthraquinone (PQ sat. in 0.1 mol l(-1) HClO4, solution) accompanied with an electrochemical redox reaction on the Au electrode. The result shows that: (1) the reduced form PQH(2) adsorbed at the Au electrode and the desorption occurred when PQH(2) was oxidized to PQ; (2) the adsorption process initiates at steps or kinks which provide high active sites on the electrode surface for adsorption, and as the potential shifts to negative, a multilayer of PQH(2) may be formed at the Au electrode; (3) the reduced PQH(2) adsorbed preferentially in the area where the tip had been scanned continually; this result suggests that the tip induction may accelerate the adsorption of PQH(2) on the Au(111) electrode. Two kinds of possible reason have been discussed; (4) high resolution STM images show the strong substrate lattice information and the weak monolayer adsorbate lattice information simultaneously. The PQH(2) molecules pack into a not perfectly ordered condensed physisorbed layer at potentials of 0.1 and 0.2 V with an average lattice constant a = 11.5 +/- 0.4 Angstrom, b = 11.5 +/- 0.4 Angstrom, and gamma = 120 +/- 2 degrees; the molecular lattice is rotated with respect to the substrate lattice by about 23 +/- 2 degrees. (C) 1997 Elsevier Science S.A.

Structure and chemical composition of supported Pt-Sn electrocatalysts for ethanol oxidation

Carbon supported PtSn alloy and PtSnOx particles with nominal Pt:Sn ratios of 3:1 were prepared by a modified polyol method. High resolution transmission electron microscopy (HRTEM) and X-ray microchemical analysis were used to characterize the composition, size, distribution, and morphology of PtSn particles. The particles are predominantly single nanocrystals with diameters in the order of 2.0-3.0 nm. According to the XRD results, the lattice constant of Pt in the PtSn alloy is dilated due to Sn atoms penetrating into the Pt crystalline lattice. While for PtSnOx nanoparticles, the lattice constant of Pt only changed a little. HRTEM micrograph of PtSnOx clearly shows that the change of the spacing of Pt (111) plane is neglectable, meanwhile, SnO2 nanoparticles, characterized with the nominal 0.264 nm spacing of SnO2 (10 1) plane, were found in the vicinity of Pt particles. In contrast, the HRTEM micrograph of PtSn alloy shows that the spacing of Pt (111) plane extends to 0.234 nm from the original 0.226 nm. High resolution energy dispersive X-ray spectroscopy (HR-EDS) analyses show that all investigated particles in the two PtSn catalysts represent uniform Pt/Sn compositions very close to the nominal one. Cyclic voltammograms (CV) in sulfuric acid show that the hydrogen ad/desorption was inhibited on the surface of PtSn alloy compared to that on the surface of the PtSnOx catalyst. PtSnOx catalyst showed higher catalytic activity for ethanol electro-oxidation than PtSn alloy from the results of chronoamperometry (CA) analysis and the performance of direct ethanol fuel cells (DEFCs). It is deduced that the unchanged lattice parameter of Pt in the PtSnOx catalyst is favorable to ethanol adsorption and meanwhile, tin oxide in the vicinity of Pt nanoparticles could offer oxygen species conveniently to remove the CO-like species of ethanolic residues to free Pt active sites. (C) 2005 Elsevier Ltd. All rights reserved.

Lattice instability at a fast moving crack tip

A molecular dynamics method is used to analyze the dynamic propagation of an atomistic crack tip. The simulation shows that the crack propagates at a relatively constant global velocity which is well below the Rayleigh wave velocity. However the local propagation velocity oscillates violently, and it is limited by the longitudinal wave velocity. The crack velocity oscillation is caused by a repeated process of crack tip blunting and sharpening. When the crack tip opening displacement exceeds a certain critical value, a lattice instability takes place and results in dislocation emissions from the crack tip. Based on this concept, a criterion for dislocation emission from a moving crack tip is proposed. The simulation also identifies the emitted dislocation as a source for microcrack nucleation. A simple method is used to examine this nucleation process. (C) 1996 American Institute of Physics.