Growth promotion of vegetative gametophytes of Undaria pinnatifida by blue light

Through an acclimation period of 10 days, compared to white light, the maximal net photosynthetic rates were significantly higher for gametophytes of Undaria pinnatifida cultivated under blue light (400-500 nm), and were lower under red light (600-700 nm). Chlorophyll c and the carotenoid content of gametophytes were similar under blue light and red light but were much lower under white light. The growth rate of female gametophytes under blue light was higher than that under other lights, and the growth rate of male gametophytes showed little variation with respect to blue and white light. Male and female gametophytes were mixed together to form sporophytes under white, blue and red light. After approximately 5 days, 50% gametophytes became fertile under blue and white light, but remained vegetative under red light after 10 days.

Photosynthetic characteristics of the terrestrial blue-green alga, Nostoc flagelliforme

Photosynthetic responses of rewetted Nostoc flagelliforme to CO2, desiccation, light and temperature were investigated under emersed conditions in order to characterize its ecophysiological behaviour in nature. Net photosynthesis increased to a maximum rate at about 30 % water loss, then decreased, while dark respiration always decreased with the progress of desiccation. Light-saturated photosynthesis and dark respiration were significantly reduced at 8 degreesC, but remained little affected by changes of temperature within the range of 15-35 degreesC. Photosynthetic efficiency (alpha) was maximal at the beginning of desiccation and then reduced with increased water loss. Saturating irradiance for photosynthesis was about 194-439 mu mol quanta m(-2) s(-1), being maximal at about 30 % water loss. No photoinhibition was observed at irradiances up to 1140 mu mol m(-2) s(-1). Light compensation points were about 41-93 mu mol m(-2) s(-1). Photosynthesis of N. flagelliforme was CO2-limited at the present atmospheric CO2 level. The CO2-saturated photosynthesis increased with increase of irradiance (190-1140 mu mol m(-2) s(-1)) and temperature (8-25 degreesC) and decreased significantly with water loss (0-75 %). Photosynthetic affinity for CO2 was sensitive to temperature and irradiance. The CO2 compensation point (Gamma) increased significantly with increased temperature and was insensitive to irradiance. Desiccation did not affect Gamma values before water loss exceeded 70 %. Photorespiratory CO2 release did not occur in N. flagelliforme at the current atmospheric CO2 level.

Chinese studies on the edible blue-green alga, Nostoc flagelliforme: a review

Nostoc flagelliforme, which is distributed in arid or semiarid steppes of the west and west-northern parts of China, has been used by the Chinese as a food delicacy and for its herbal values for hundreds of years. However, the resource is being over-exploited and is diminishing, while the market demands are increasing with the economic growth. This review deals mainly with the Chinese studies on the ecology, physiology, reproduction, morphology and culture of this species in an attempt to promote research and development of its cultivation technology.

STUDIES ON MIXED MASS CULTIVATION OF ANABAENA SPP (NITROGEN-FIXING BLUE-GREEN-ALGAE, CYANOBACTERIA) ON A LARGE-SCALE

Studies on mixed mass cultivation of Anabaena spp. on a large scale (5170 m2) were conducted continuously for 3 years. Under the continental monsoon climate in northern subtropics (30-degrees-N, 115-degrees-E), 7-11 g dry weight m-2 day-1 of microalgal biomass on average was harvested in simple plastic greenhouses in the effective growth days during the warmer seasons. The maximum productivity was 22 g m-2 day-1 in the middle of summer. Observations on the productive properties of strains of Anabaena spp. indicated that they were different from and could compensate for each other in their productivities and adaptations to the seasonal changes. With different lining materials (PVC sheets, concrete, sand and soil) in the culture ponds, no significant variation of productivity was found, but bubbling with biogas in the middle of the day and the application of some growth regulating substances (2,4-D, NaHSO3 and extracts of oyster mushroom spawn) was able to improve the production. The cost of microalgal biomass in this way was around 0.75-1.0 US dollar(s) per kilogram.

CYCLIC PEPTIDE HEPATOTOXINS FROM FRESH-WATER CYANOBACTERIAL (BLUE-GREEN-ALGAE) WATERBLOOMS COLLECTED IN CENTRAL CHINA

Toxic cyanobacteria (blue-green algae) waterblooms have been found in several Chinese water bodies since studies began there in 1984. Waterbloom samples for this study contained Anabaena circinalis, Microcystis aeruginosa and Oscillatoria sp. Only those waterblooms dominated by Microcystis aeruginosa were toxic by the intraperitoneal (i.p.) mouse bioassay. Signs of poisoning were the same as with known hepatotoxic cyclic peptide microcystins. One toxic fraction was isolated from each Microcystis aeruginosa sample. Two hepatotoxic peptides were purified from each of the fractions by high-performance liquid chromatography and identified by amino acid analysis followed by low and high resolution fast-atom bombardment mass spectrometry (FAB-MS). LD50 i.p. mouse values for the two toxins were 245-mu-g/kg (Toxin A) and 53-mu-g/g (Toxin B). Toxin content in the cells was 0.03 to 3.95 mg/g (Toxin A) and 0.18 to 3.33 mg/kg (Toxin B). The amino acid composition of Toxin A was alanine [1], arginine [2], glutamic acid [1] and beta-methylaspartic acid [1]; for Toxin B it was the same, except one of the arginines was replaced with a leucine. Low- and high-resolution FAB-MS showed that the molecular weights were 1,037 m/z (Toxin A) and 994 m/z (Toxin B), with formulas of C49H76O12N13 (Toxin A) and C49H75O12N10 (Toxin B). It was concluded that Toxin A is microcystin-RR and Toxin B is microcystin-LR, both known cyclic heptapeptide hepatotoxins isolated from cyanobacteria in other parts of the world. Sodium borohydride reduction of microcystin-RR yielded dihydro-microcystin-RR (m/z = 1,039), an important intermediate in the preparation of tritium-labeled toxin for metabolism and fate studies.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Blue-green optically pumped GaN-based vertical cavity surface emitting laser

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm(2) and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.

Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors

Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplifled procedure direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 ran under optical pumping at room temperature with a threshold pumping energy density of about 71.5 mJ/cm(2). The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique for substrate removal.

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm(2) and a characteristic temperature To of 145 K were observed for the laser diode.