Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

Tuning of detection wavelength in a resonant-cavity-enhanced quantum-dot-embedded photodiode by changing detection angle

We have fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32% and responsivity of 0.27A/W at 1.058 mu m with a full width at half maximum (FWHM) of 5 nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0 degrees to 60 degrees, the peak-current wavelength shifts towards the short wavelength side by 37 nm, while the quantum efficiency remains larger than 15%.

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

Measurement of chirp parameter and modulation index of a semiconductor laser based on optical spectrum analysis

A novel and simple method for measuring the chirp parameter, frequency, and intensity modulation indexes of directly modulated lasers is proposed in a small-signal modulation scheme. A graphical approach is presented. An analytical solution to the measurement of low chirp parameters is also given. The measured results agree well with those obtained using the conventional methods.

Geometry parameter optimization of large cross-sectional S-shaped bent rib waveguides for silicon based optical switches

地址: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

An extended technique derived from triple-axis diffraction setup was proposed to measure lattice parameters of cubic GaN(c-GaN) films. The fully relaxed lattice parameters of c-GaN are determined to be 4.5036+0.0004 Angstrom, which is closer to the values of a hypothetical perfect crystal. The speculated zero setting correction (Deltatheta) is very slight and within the range of the accuracy of measurement. Additionally, we applied this method to analyze strain of four different kinds of c-GaN samples. It is found that in-plane strain caused by large lattice mismatch and thermal expansion coefficients mismatch directly influence the epilayer growth at high temperatures, indicating that the relaxation of tensile strain after thermal annealing helps to improve the crystalline quality of c-GaN films and optical properties. (C) 2003 Elsevier Science B.V. All rights reserved.

Scattering-parameter measurements of laser diodes

An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S(2)1) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed.

Changing the size and shape of Ge island by chemical etching

Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.

Experimental Demonstration on Structure-Parameter Dependence of Photonic Crystal Optical Spectrum

We present fabrication and experimental measurement of a series of photonic crystal waveguides and coupled structure of PC waveguide and PC micro-cavity. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-holes single-line-defect waveguide. We fabricated these devices on a silicon-on-insulator substrate and characterized them using tunable laser source. We've obtained high-efficiency light propagation and broad flat spectrum response of photonic-crystal waveguides. A sharp attenuation at photonic crystal waveguide mode edge was observed for most structures. The edge of guided band is shifted about 31 nm with the 10 nm increase of lattice constant. Mode resonance was observed in coupled structure. Our experimental results indicate that the optical spectra of photonic crystal are very sensitive to structure parameters.

Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

Efficient Simulation of Freak Waves in Random Oceanic Sea States

Numerical simulations of freak wave generation are studied in random oceanic sea states described by JONSWAP spectrum. The evolution of initial random wave trains is numerically carried out within the framework of the modified four-order nonlinear Schroedinger equation (mNLSE), and some involved influence factors are also discussed. Results show that if the sideband instability is satisfied, a random wave train may evolve into a freak wave train, and simultaneously the setting of the Phillips parameter and enhancement coefficient of JONSWAP spectrum and initial random phases is very important for the formation of freak waves. The way to increase the generation efficiency of freak waves though changing the involved parameters is also presented.