Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields

Electron cyclotron resonance CR) measurements have been carried out in magnetic fields up to 32 T to study electron-phonon interaction in two heavily modulation-delta -doped GaAs/Al0.3Ga0.7As single-quantum-well samples. No measurable resonant magnetopolaron effects were observed in either sample in the region of the GaAs longitudinal optical (LO) phonons. However, when the CR frequency is above LO phonon frequency, omega (LO)=E-LO/(h) over bar, at high magnetic fields (B>27 T), electron CR exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (LO)+ (E-2-E-1)1 (h) over bar, where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 T. A detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the CR, shows that this type of splitting is due to a three-level resonance between the second Landau level of the first electron subband and the lowest Landau level of the second subband plus one GaAs LO phonon. The absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. Excellent agreement between the theory and the experimental results is obtained.

Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation

Low-temperature time-resolved photoluminescence (PL) experiments have been performed on a semiconductor planar microcavity, which contains two sets of three In0.13Ga0.87As/GaAs quantum wells embedded in a 3 lambda /2 GaAs cavity. The spontaneous emission dynamics of both lower- and upper-branch polaritons is investigated as a function of exciton-cavity detuning under nonresonant optical excitation. It is found that the PL decay times of both branches are independent of cavity detuning while the PL rising kinetics of the lower- and upper-branch polaritons exhibits a significant difference. The rise time of the upper polarition branch shows a strong dependence on cavity detuning, while the rise time of the lower polarition branch is less sensitive to cavity detuning. Our results can be well understood in the framework of the theoretical prediction of Tassone et al.

Thermal redistribution of photocarriers between bimodal quantum dots

We study the photoluminescence (PL) properties of InAs/GaAs self-assembled quantum dots (QDs) by varying excitation power and temperature. Excitation power-dependent PL shows that there exists bimodal size distribution in the QD ensemble. Thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative PL intensity. Based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained. (C) 2001 American Institute of Physics.

Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature.

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-delta-doped GaAs/Al0.3Ga0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E-LO at B > 27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E-LO + (E-2 - E-1), where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm(-1) around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LI, of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence: of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

In this work we report the optical and microscopic properties of self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy (STM) image for uncapped sample. The power-dependent photoluminescence (PL) study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. It is shown that the coupling between quantum dots plays a key role in unusual temperature dependence of QD photoluminescence. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Realization of SOI submicrometer optical waveguide components - art. no. 68380L

Submicrometer channel and rib waveguides based on SOI (Silicon-On-Insulator) have been designed and fabricated with electron-beam lithography and inductively coupled plasma dry etching. Propagation loss of 8.39dB/mm was measured using the cut-back method. Based on these so-called nanowire waveguides, we have also demonstrated some functional components with small dimensions, including sharp 90 degrees bends with radius of a few micrometers, T-branches, directional couplers and multimode interferometer couplers.

地理环境要素与渭河流域水沙关系的定量研究

定量评价影响渭河流域产水、产沙的地理环境要素因子,为渭河流域产水、产沙格局划分及流域生态环境建设提供理论依据。【方法】分析渭河流域主要支流产水、产沙对年降雨量(P)、植被净初级生产力(NPP)、泥沙中数直径(D50)等地带性因子之间的响应机制。【结果】流域产水、产沙模数与以上3种因子之间均存在明显的非线性关系。采用回归分析得到了流域产水、产沙与地带性因子之间的多元回归模型。【结论】建立了渭河流域产水、产沙与地理环境要素之间的多项式回归模型。

新型镍、钯和钒烯烃聚合催化剂的研究

1.合成并表征了三个新型的双核3,3’-双水杨醛亚胺型中性镍配合物及其配体。这些配合物中的每个配位单元都充当了另外一个单元在C-3位的大体积取代基，从而开发了一种合成C-3位具有大体积取代基的水杨醛亚胺中性镍催化剂的简便方法。在不使用助催化剂的情况下，这些配合物催化乙烯聚合时活性高达5.6×105 g PE/molNih，所得聚乙烯分子量高，分子量分布比相应的单核镍催化剂宽。 2. 合成并表征了两个含游离羟基的水杨醛亚胺型中性镍配合物及其配体。在没有助催化剂的情况下，它们催化乙烯聚合时活性高达1.47×106 g PE/molNih，所得聚乙烯支化度高达127 branches/1000C。与经Al(CH3)3处理过的硅胶反应后，这两个催化剂通过化学键负载在硅胶上。负载后的催化剂能单组分地高活性地催化乙烯聚合得到高分子量低支化度的聚乙烯，据我们所知，这是第一例能催化乙烯聚合得到高分子量聚乙烯的中性镍负载催化剂。 3. 合成并表征了六个双核3,3’-双水杨醛亚胺型中性钯配合物。在改性甲基铝氧烷(MMAO)的活化下，它们和那些双核的水杨醛亚胺型中性镍配合物能高效催化降冰片烯聚合，催化活性高达2.3×108 g PNBE/molPdh，比相应的单核配合物活性高。其中含吡啶配体的双核钯配合物的催化活性远低于含三苯基磷配体的双核钯配合物。它们所产生的聚降冰片烯在结构上的差异导致镍配合物所得聚降冰片烯溶于有机溶剂而钯配合物所得降冰片烯不溶解。 4.合成并表征了一系列吡咯亚胺配体的钒(III)配合物。在AlEt2Cl的活化下，这些配合物能高效催化乙烯聚合，活性高达1.50 107 g PE/molVh。此外，它们还能催化乙烯与1-己烯、乙烯与降冰片烯的共聚合反应，活性都在4.80106 g Polym/molVh以上。所得乙烯/降冰片烯共聚物有着明显的交替共聚趋势，降冰片烯的插入率可达40% (mol)。该催化体系在高温下仍很稳定，助催化剂AlEt2Cl比MMAO廉价得多，有一定商业前景。

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.

VLSI architecture of a K-best detector for MIMO--OFDM wireless communication systems

The K-best detector is considered as a promising technique in the MIMO-OFDM detection because of its good performance and low complexity. In this paper, a new K-best VLSI architecture is presented. In the proposed architecture, the metric computation units (MCUs) expand each surviving path only to its partial branches, based on the novel expansion scheme, which can predetermine the branches' ascending order by their local distances. Then a distributed sorter sorts out the new K surviving paths from the expanded branches in pipelines. Compared to the conventional K-best scheme, the proposed architecture can approximately reduce fundamental operations by 50% and 75% for the 16-QAM and the 64-QAM cases, respectively, and, consequently, lower the demand on the hardware resource significantly. Simulation results prove that the proposed architecture can achieve a performance very similar to conventional K-best detectors. Hence, it is an efficient solution to the K-best detector's VLSI implementation for high-throughput MIMO-OFDM systems.

Second-Order Raman Scattering from n- and p-Type 4H-SiC

The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and the points in the Brillouin zone from which the scattering originates.There exists a doublet at 626/636cm-1 with energy difference about 10cm-1 in both n- and p-type 4H-SiC,which is similar to the doublet structure with the same energy difference founded in hexagonal GaN,ZnO, and AlN.The cutoff frequency at 1926cm-1 of the second-order Raman is not the overtone of the A1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.The second-order Raman spectrum of 4H-SiC can hardly be affected by doping species or doping density.

Linear spatio-temporal instability analysis of ice growth under a falling water film

A linear spatio-temporal stability analysis is conducted for the ice growth under a falling water film along an inclined ice plane. The full system of linear stability equations is solved by using the Chebyshev collocation method. By plotting the boundary curve between the linear absolute and convective instabilities (AI/CI) of the ice mode in the parameter plane of the Reynolds number and incline angle, it is found that the linear absolute instability exists and occurs above a minimum Reynolds number and below a maximum inclined angle. Furthermore, by plotting the critical Reynolds number curves with respect to the inclined angle for the downstream and upstream branches, the convectively unstable region is determined and divided into three parts, one of which has both downstream and upstream convectively unstable wavepackets and the other two have only downstream or upstream convectively unstable wavepacket. Finally, the effect of the Stefan number and the thickness of the ice layer on the AI/CI boundary curve is investigated.

Effect of volume ratio on thermocapillary flow in liquid bridges of high-Prandtl-number fluids

In present study, the transition of thermocapillary convection from the axisymmetric stationary flow to oscillatory flow in liquid bridges of 5cst silicon oil (aspect ratio 1.0 and 1.6) is investigated in microgravity conditions by the linear instability analysis. The corresponding marginal instability boundary is closely related to the gas/liquid configuration of the liquid bridge noted as volume ratio. With the increasing volume ratio, the marginal instability boundary consists of the increasing branch and the decreasing branch. A gap region exists between the branches where the critical Marangoni number of the corresponding axisymmetric stationary flow increases drastically. Particularly, a unique axisymmetric oscillatory flow (the critical azimuthal wave number is m=0) in the gap region is reported for the liquid bridge of aspect ratio 1.6. Moreover, the energy transfer between the basic state and the disturbance fields of the thermocapillary convection is analyzed at the corresponding critical Marangoni number, which reveals different major sources of the energy transfer for the development of the disturbances in regimes of the increasing branch, the gap region and the decreasing branch, respectively.