Thermal redistribution of photocarriers between bimodal quantum dots
Data(s) |
2001
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Resumo |
We study the photoluminescence (PL) properties of InAs/GaAs self-assembled quantum dots (QDs) by varying excitation power and temperature. Excitation power-dependent PL shows that there exists bimodal size distribution in the QD ensemble. Thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative PL intensity. Based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained. (C) 2001 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang YC; Huang CJ; Liu FQ; Xu B; Wu J; Chen YH; Ding D; Jiang WH; Ye XL; Wang ZG .Thermal redistribution of photocarriers between bimodal quantum dots ,JOURNAL OF APPLIED PHYSICS,2001 ,90(4):1973-1976 |
Palavras-Chave | #半导体物理 #TEMPERATURE-DEPENDENCE #CARRIER RELAXATION #EMISSION |
Tipo |
期刊论文 |