Study of sorption, biodegradation and isomerization of HCH in stimulated sediment/water system

This paper reported the sorption, biodegradation and isomerization of hexachlorocyclohexane (HCH) in laboratory sediment/water system under aerobic and anaerobic conditions, respectively. The effect of organic nutrient addition to the sorption of HCH was also investigated. It indicates that HCH is highly adsorbed on sediments under both conditions. During the tests, the biodegradation and isomerization of HCH were dramatically speeded up after organic nutrient additions, especially in the case of the observation under aerobic condition. It was found, beta-HCH was the most persistent in the environment, that is due to the isomerization of alpha-HCH in a big amount to beta-HCH, besides its chemical stability. (C) 1997 Elsevier Science Ltd.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices

We have calculated the bond distributions and atom positions of GaAs/GalnNAsSb superlattices using Keating's semiempirical valence force field (VFF) model and Monte Carlo simulation. The electronic structures of the superlattices are calculated using folded spectrum method (FSM) combined with an empirical pseudopotential (EP) proposed by Williamson et al.. The effects of N and Sb on superlattice energy levels are discussed. We find that the deterioration of the optical properties induced by N can be explained by the localization of the conduction-band states around the N atom. The electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the bulk GaAs and GaInAs.

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

We have studied the influence of the growth temperature of the high-temperature (HT) AIN buffer layer on the properties of the GaN epilayer which was grown on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). It was found that the crystal quality of the GaN epilayer strongly depends on the growth temperature of the HT-AIN buffer. The growth temperature of the AIN buffer to obtain high-quality GaN epilayers lies in a narrow window of several tens of degrees. When the temperature is lower than a certain temperature range, the appearance of AIN polycrystals results in the deterioration of the crystal quality of the AIN buffer layer, which is greatly disadvantageous to the coalescence of the GaN epilayer. Although the AIN buffer's crystal quality is improved as the growth temperature increases, the Si outdiffusion from the substrate is also enhanced when the temperature is higher than a certain temperature range, which will demolish the subsequent growth of the GaN epilayer. Therefore, there exists an optimum growth temperature range of the AIN buffer around 1080degreesC for the growth of high-quality GaN epilayers. (C) 2003 Elsevier B.V. All rights reserved.

Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices

Using Keating's semiempirical valence force field model and Monte Carlo simulation, we calculate the bond distributions and atom positions of GaAs/GaInNAsSb superlattices. The electronic structures of the superlattices are calculated using the folded spectrum method combined with an empirical pseudopotential proposed by Williamson The effects of N and Sb on superlattice energy levels are discussed. The deterioration of the optical properties induced by N is explained by the localization of the conduction-band states around the N atom. The electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the GaAs and GaInAs.

Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well

Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs layers grown by molecular beam epitaxy are investigated. The temperature-dependent PL spectra of GaInNAs/GaAs QW with and without GaNAs layers are compared and carefully studied. It is shown that the introduction of GaNAs layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. The PL peak position up to 1.41 mum is observed at the room temperature. After adding the GaNAs layers into QW structures, there is no essential deterioration of luminescence efficiency. N-induced localization states are also not remarkably influenced. It implies that with optimized growth condition, high-quality GaInNAs/GaAs QWs with strain-compensated GaNAs layers can be achieved. (C) 2003 Elsevier Science B.V. All rights reserved.

Rhodococcus qingshengii sp nov., a carbendazim-degrading bacterium

A Gram-positive, aerobic, non-motile, mesophilic strain, djl-6(T), able to degrade carbendazim, was isolated from a carbendazim-contaminated soil sample from Jiangsu province, China. The taxonomic position of this isolate was analysed by using a polyphasic approach. Chemotaxonomic analysis including peptidoglycan type, diagnostic sugar composition, fatty acid profile, menaquinones, polar lipids and mycolic acids showed that the characteristics of strain djl-6(T) were in good agreement with those of the genus Rhodococcus. DNA-DNA hybridization showed that it had low genomic relatedness with Rhodococcus baikonurensis DSM 44587(T) (31.8%), Rhodococcus erythropolis DSM 43066(T) (23.8%) and Rhodococcus globerulus DSM 43954(T) (117.7%), the three type strains to which strain djl-6(T) was most closely related based on 16S rRNA gene sequence analysis (99.78, 99.25 and 98.91% similarity, respectively). Based on the phenotypic properties and DNA-DNA hybridization data, strain djl-6(T) (=CGMCC 1.6580(T) =KCTC 19205(T)) is proposed as the type strain of a novel Rhodococcus species, Rhodococcus qingshengii sp. nov.

原状土通气培养法测定黄土高原土壤供氮能力的研究

评价原状土通气培养法在反映黄土高原土壤供氮能力方面的效果。【方法】以采自于黄土高原差异较大的11个农田耕层土壤为供试土样,以包括和不包括土壤起始NO3--N原状土盆栽黑麦草累积吸氮量为参比,进行室内原状土通气培养法测定土壤供氮能力的研究。【结果】以包括土壤起始NO3--N盆栽试验植物吸氮量为参比,通气培养前CaCl2所淋洗起始NO3--N和起始矿质氮与5期黑麦草地上部氮素累积量密切相关,相关系数分别为0.856和0.862,达1%显著水平;与此相反,通气培养30周所矿化氮素、土壤起始矿质氮+通气培养30周矿化氮素、氮素矿化势(N0)及N0+起始矿质氮与5期黑麦草地上部氮素累积量间无显著相关关系,相关系数分别仅为0.410、0.553、0.492和0.419。以不包括土壤起始NO3--N盆栽试验植物吸氮量为参比,通气培养前CaCl2淋洗起始NO3--N和起始矿质氮与五期黑麦草地上部氮素累积量间的相关性尽管有所降低,但相关性仍达5%显著水平,相关系数分别为0.613和0.607;而通气培养30周矿化氮素、土壤起始矿质氮+通气培养30周矿化氮素、N0及N0+起始矿质氮与五期黑麦草地上部吸氮量的相关系数却明显...

对间隙淋洗长期通气培养条件下黄土高原土壤供氮能力的评价

采用间隙淋洗长期通气培养法,通过对黄土高原物理化学性质差异较大的10种农田土样起始矿质氮、起始提取态总氮、起始可溶性有机氮,以及培养期间淋洗矿质氮、淋洗总氮、可溶性有机氮含量及其与作物吸氮量关系的研究,分析并评价黄土高原主要农田土壤氮素矿化能力以及包括和不包括培养淋洗可溶性有机氮对土壤供氮能力的影响。结果表明,供试土样起始可溶性有机氮平均为N 23.9 mg/kg,是起始提取态总氮的28.8%,土壤全氮的2.4%。在通气培养淋洗总氮中,可溶性有机氮所占比例不高,经过217 d通气培养,淋洗出的可溶性有机氮平均为N 28.8mg/kg,占淋洗总氮量的19.8%。相关分析表明,淋洗可溶性有机氮量与第l季作物吸氮量相关不显著,但与连续2季作物总吸氮量显著相关。淋洗矿质氮、淋洗总氮与两季作物总吸氮量的相关系数明显高于与第一季作物吸氮量的相关系数;与第一季作物吸氮量达显著相关水平,与连续两季作物吸氮量达极显著相关水平。总体上看,可溶性有机氮和土壤全氮、土壤微生物氮不能作为反映短期可矿化氮的指标;间隙淋洗通气培养淋洗液中淋洗矿质氮、淋洗总氮是评价可矿化氮的较好指标,不仅适宜于第一季作物,而且也适用于对连续两季作物土壤供氮...

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

Temperature Dependence of Characteristics for Multimode Interference Based 3-dB Coupler in SOI

The temperature dependence of characteristics for multimode interference (MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon. For restricted interference 3-dB MMI coupler, the output power uniformity is ideally 0 at room temperature and becomes 0. 32 dB when temperature rises up to 550 K. For symmetric interference 3-dB MMI coupler, the power uniformity keeps ideally 0 due to its intrinsic symmetric interference mechanism. With the temperature rising, the excess loss of the both devices increases. The performance deterioration due to temperature variety is more obvious to restricted interference MMI 3-dB coupler, comparing with that of symmetric interference MMI 3-dB coupler.

石油烃污染对稻田土壤微生物生态系统的影响

由于含油污水灌溉、原油储存运输和石油冶炼过程中导致的泄漏事故等原因，石油类物质已经成为环境中的主要污染物之一。石油烃污染物对土壤微生物遗传多样性和群落结构的影响在国外已有一些报道，但有关于石油烃污染对稻田土壤微生物生态系统的影响一直以来一直没有一个全面和系统的认识。本论文首次采用传统微生物培养方法、常规生化分析方法与PC树DGGE等现代分子生态学研究方法相结合的手段系统评价了长期石油污水灌溉对中国最大的石油类污水灌区-沈抚灌区的稻田土壤微生物种群数量、细菌群落组成、多样性及代谢活性的影响。结果表明，总石油烃（Total Petloleum hydrocarbon／TPH）在灌区干渠和支渠中的积累和分布趋势大体上是上游地区较严重，下游地区较轻，并且与土壤中有机质含量呈显著正相关。在目前的污染程度下，石油污水能够刺激土壤好氧异养细菌（Aerobic heterotrophic bacteria／AHB）和真菌的生长，其数量与TPH含量呈显著正相关。细菌基因多样性与TPH含量呈显著负相关，细菌群落中的优势菌群为变形细菌β-亚群和γ-亚群的菌种。土壤脱氢酶、过氧化氢酶、多酚氧化酶活性和土壤底物诱导呼吸（substrate-induced respiration／SIR）与土壤中TPH含量呈显著正相关，而土壤脉酶活性则与之呈显著负相关。实验室110天不同浓度石油烃胁迫模拟试验结果表明，当石油烃胁迫浓度低于1000mgk扩时可以被定义为轻度污染，土壤中AHB大量增殖，细菌多样性和群落结构可在处理第30天和第50天得到恢复；当石油烃胁迫浓度为5000mg·kg~(-1)-10000mg·kg~(-1)时可以被定义为中度污染，AHB数量显著增加，放线菌和真菌数量显著降低，土壤细菌多样性在培养前巧天显著降低，至培养结束时有逐渐恢复的趋势，细菌群落结构发生明显改变，土壤脱氢酶、多酚氧化酶、脉酶的活性及土壤SIR受到一定程度的抑制，但能够显著刺激土壤过氧化氢酶活性的提高。当石油烃胁迫浓度为10000mg·kg~(-1)-50000mg·kg~(-1)时可以被定义为重度污染，对AHB生长的刺激作用更为显著，土壤细菌多样性在培养前15天显著降低并不可恢复，群落组成与对照差异很大，所有土壤酶和SIR均受到严重抑制。从沈抚灌区上游地区旱田土壤、灌渠底泥和实验室高浓度石油烃胁迫土壤中筛选出了4株TPH生物降解率在60％以上的高效石油烃降解菌并鉴定其归属，这些菌株均能够利用正构烷烃、单环和多环芳烃及环烷烃。