Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
Data(s) |
2003
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Resumo |
Using Keating's semiempirical valence force field model and Monte Carlo simulation, we calculate the bond distributions and atom positions of GaAs/GaInNAsSb superlattices. The electronic structures of the superlattices are calculated using the folded spectrum method combined with an empirical pseudopotential proposed by Williamson The effects of N and Sb on superlattice energy levels are discussed. The deterioration of the optical properties induced by N is explained by the localization of the conduction-band states around the N atom. The electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the GaAs and GaInAs. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Niu, ZC; Ni, HQ; Xu, XH; Zhang, W; Xu, YQ; Wu, RH .Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices ,PHYSICAL REVIEW B,DEC 2003,68 (23):Art.No.235326 |
Palavras-Chave | #半导体物理 #MOLECULAR-BEAM EPITAXY |
Tipo |
期刊论文 |