Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.

WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES

We have observed Wannier-Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 mum, based on Wannier-Stark localization effects.

WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD

We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons.

PHOTOLUMINESCENCE INVESTIGATIONS OF CD1-XMNXTE UNDER HYDROSTATIC-PRESSURE

The photoluminescence of Cd1-xMnxTe with x=0.25, 0.40, and 0.60 is investigated at 77 K and different pressures. The pressure coefficients of the photoluminescence bands Cd0.75Mn0.25Te and Cd0.6Mn0.4Te are found to be positive and the magnitudes are about 8 X 10(-3) eV/kbar, which is in good agreement with the pressure coefficients of the interband transition. The pressure coefficient of the photoluminescence bands for Cd0.4Mn0.6Te is found to be -6 X 10(-3) eV/kbar, which is quite different from the pressure coefficient of the interband transition. The possible transition mechanism is discussed in terms of group theory and crystal field theory.

GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR

A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.

Photoluminescence of ZnS clusters in zeolite-Y

Two obvious emissions are observed from the ZnS clusters encapsulated in zeolite-Y. The emission around 355 nm is sharp and weak, locating at the onset of the absorption edge. The band around 535 nm is broad, strong and Stokes-shifted. Both the two emissions shift to blue and their intensities firstly increase then decrease as the loading of ZnS in zeolite-Y or clusters size decreases. Through investigation, the former is attributed to the excitonic fluorescence, and the latter to the trapped luminescence from surface states. The cluster size-dependence of the luminescence may be explained qualitatively by considering both the carrier recombination and the nonradiative recombination rates. Four peaks appearing in the excitation spectra are assigned to the transitions of 1S-1S, 1S-1P, 1S-1D and surface state, respectively. The excitation spectra of the clusters do not coincide with their absorption spectra. The states splitted by quantum-size confinement are detected in the excitation spectra, but could not be differentiated in the optical absorption spectra due to inhomogeneous broadening. The size-dependence of the excitation spectra is similar to that of the absorption spectra. Both the excitation spectra of excitonic and of trapped emissions are similar, but change in relative intensity and shift in position are observed.

High temperature annealing behaviors of luminescent SIOx : H films

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution

CdSe nanoclusters overcoated with CdS shell were prepared with macapoacetic acid as stabilizer. The optical properties of CdSe nanoclusters and the influence of CdS shell on the electronic structures of CdSe cores were studied by optical absorption, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Based on PL and PLE results and the theoretical calculation on fine structure of bandedge exciton, a model of formation of excimer within the small clusters was proposed to explain the large Stokes shift of luminescence from absorption edge observed in PL results. (C) 2000 Elsevier Science B.V. All rights reserved.

Pressure behavior of deep centers in ZnSxTe1-x alloys

We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

ZnO clusters encapsulated inside micropores of zeolites studied by UV Raman and laser-induced luminescence spectroscopies

Using microporous zeolites as host, sub-nanometric ZnO clusters were prepared in the micropores of the host by the incipient wetness impregnation method. A small amount of sub-nanometric ZnO clusters were introduced into the channels of HZSM-5 zeolite, whereas a large quantity of sub-nanometric ZnO clusters can be accommodated in the supercages of HY zeolite and no macrocrystalline ZnO exists on the extra surface of the HY material. The vibrations of the zeolite framework and ZnO were characterized by UV Raman spectroscopy. The optical properties of these ZnO clusters were studied by UV-visible absorption spectroscopy and laser-induced luminescence spectroscopy. It is found that there are strong host-guest interactions between the framework oxygen atoms of zeolite and ZnO clusters influencing the motions of the framework oxygen atoms. The interaction may be the reason why ZnO clusters are stabilized in the pores of zeolites. Different from bulk ZnO materials, these sub-nanometric ZnO clusters exhibit their absorption onset below 265 nm and show a purple luminescence band (centered at 410-445 nm) that possesses high quantum efficiency and quantum size effect. This purple luminescence band most likely originates from the coordinatively unsaturated Zn sites in sub-nanometric ZnO clusters. On the other hand, the differences in the pore structure between HZSM-5 and HY zeolites cause the absorption edge and the purple luminescence band of ZnO clusters in ZnO/HZSM-5 show a red shift in comparison with those of ZnO clusters in ZnO/HY.

Pyrazine-containing Acene-Type Molecular Ribbons with up to 16 Rectilinearly Arranged Fused Aromatic Rings

A series of acene-type conjugated molecules(1-5) containing 2-6 pyrazine units and up to 16 rectilinearly arranged fused aromatic rings were synthesized by condensation coupling of 1,2-diamines and 1,2-diketones. The energy gap of the molecules estimated from absorption edge decreases with an increase in molecular length, indicating the well-delocalized nature of the molecules. The cyclic voltarnmetry measurements suggest that the n-type properties of these ribbonlike pyrazine derivatives are dependent on the molecular length and the number of the pyrazine units.

Synthesis and Characterizations of Poly(9,10-bisarylethynyl-2,6-anthrylene)s and Poly(9,10-bisalkynyl-2,6-anthrylene)

A poly(9,10-bisalkynyl-2,6-anthrylene) (PI) and five poly(9,10-bisarylethynyl-2,6-anthrylene)s(P2-P6) as soluble conjugated polymers have been synthesized and characterized. All polymers exhibit two-dimensional conjugated characteristics as indicated by absorption spectra comprising multi-bands in the range of 300-600 nm. Compared with P1, polymers P2-P5, which contain phenylethynyl substituents with the longer conjugation than alkynyl groups, exhibit a similar to 60 nm red shift of absorption edge. However, further increasing the conjugation length of the arylethynyl substituents (longer than phenylethynyl) has only a no effect on the conjugation of the polymer chains, while comparing the absorption spectra of P6 with those of P2-P5.

UV-VUV excited luminescence of SrBPO5 : Sm phosphor prepared in air

The high-resolution luminescent spectrum of divalent samarium excited by 355 nm UV light at 77 K, the VUV excitation spectra, the VUV excited emission spectra and EXAFS at Sm-L-3 edge were reported for samarium doped strontium borophosphate, SrBPO5:Sm prepared by solid state reaction in air at high temperature. The high-resolution luminescent spectrum showed that the divalent samarium ions occupied the C-2upsilon lattice sites. The VUV excitation spectra indicated that the sample exhibited absorption bands with the maxima at 129 and 148 nm, respectively. The performance of EXAFS at Sm-L3 absorption edge suggested that the samarium ions were nine-coordinated and the mean distances of bond Sm-O were 2.38 Angstrom.

Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.