Preparation and characterization of hybrid ZnO/ormosils films

Hybrid ZnO/ormosils Elms are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150 degrees C, the refractive index and thickness of the film are 1.413, 2.11 mu m, respectively. Higher temperatures (350 degrees C, 550 degrees C) change the Elm microstructure severely, and then decrease the transmittance of the films.

用VTE方法在蓝宝石衬底上生长γ-LiAlO2薄膜

利用气相传输平衡技术(VTE)和后退火处理工艺在(0001)蓝宝石衬底上获得了高度[100]取向的γ-LiAlO2薄膜．X射线衍射表明是由单相的γ-LiAlO2所组成,此薄膜经850～900℃／120h空气中退火处理后显示出高度的[100]取向,这一实验结果意味着有望通过VTE方法制备用于GaN基器件外延生长的γ-LiAlO2(100)-Al2O3(0001)复合衬底.

Sol-gel combustion synthesis and luminescent properties of nanocrystalline YAG : Eu3+ phosphors

EU3+ -doped Y3Al5O12 (YAG:Eu3+) phosphors were synthesized by a facile sol-gel combustion method. In this process, citric acid traps the constituent cations and reduces the diffusion length of the precursors. YAG phase is obtained through sintering at 900 degrees C for 2h. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed. The charge transfer band of nanocrystalline phosphors shows a shift toward the high-energy side, compared with that of amorphous ones due to lower covalency of Eu-O bond for nanocrystalline phosphors. The higher concentration quenching in YAG:EU3+ nanophosphors may be caused by the confinement effect on resonant energy transfer of nanocrystalline. It also indicates that the sol-gel combustion synthesis method provides a good distribution of Eu3+ activators in YAG host. (c) 2005 Elsevier B.V. All rights reserved.

Structural and optical properties of YAG : Ce3+ phosphors by sol-gel combustion method

High-quality Ce3+-doped Y3Al5O12 (YAG:Ce3+) phosphors were synthesized by a facile sol-gel combustion method. In this sol-gel combustion process, citric acid acts as a fuel for combustion, traps the constituent cations and reduces the diffusion length of the precursors. The XRD and FT-IR results show that YAG phase can form through sintering at 900 degrees C for 2 h. This temperature is much lower than that required to synthesize YAG phase via the solid-state reaction method. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed in the sintering process. The average grain size of the phosphors sintered at 900-1100 degrees C is about 40 nm. With the increasing of sintering temperature, the emission intensity increases due to the improved crystalline and homogeneous distribution of Ce3+ ions. A blue shift has been observed in the Ce3+ emission spectrum of YAG:Ce3+ phosphors with increasing sintering temperatures from 900 to 1200 degrees C. It can be explained that the decrease of lattice constant affects the crystal field around Ce3+ ions. The emission intensity of 0.06Ce-doped YAG phosphors is much higher than that of the 0.04Ce and 0.02Ce ones. The red-shift at higher Ce3+ concentrations may be Ce-Ce interactions or variations in the unit cell parameters between YAG:Ce3+ and YAG. It can be concluded that the sol-gel combustion synthesis method provides a good distribution of Ce3+ activators at the molecular level in YAG matrix. (c) 2005 Elsevier B.V. All rights reserved.

凝胶-燃烧法合成YAG：Eu^3＋纳米荧光材料的结构和发光性能

Y3Al5O12:Eu nanophosphors were synthesized by a gel combustion method. The structure of phosphors was characterized by XRD and FTIR. YAG phase came to occur when YAG:Eu precursors were sintered at 800 ℃, although the phase was mainly amorphous. The organ

Solution combustion synthesis, structure and luminescence of Y3Al5O12 : Tb3+ phosphors

The synthesis and optical properties of Y3Al5O12:Tb3+ phosphors are reported in this paper. Y3Al5O12:Tb3+ phosphors were synthesized by a facile solution combustion method. Citric acid traps the constituent cations and also acts as a fuel. Y3Al5O12 (YAG) phase can crystallize through sintering at 900 degrees C for 2 h, and there were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) in the sintering process. The excitation spectra of crystalline Y3Al5O12:Tb3+ are different from that of amorphous one due to the crystal field effect. The emission spectra mainly show D-5(4) -> F-7(6) transition under UV excitation. The higher concentration quenching in Y3Al5O12:Tb3+ nanophosphors may be due to the confinement effect on resonant energy transfer of nanocrystalline. It is also indicated that the solution combustion synthesis method provides a good distribution of Tb3+ activators in Y3Al5O12 host. (c) 2005 Published by Elsevier B.V.

Study on the hydrolytic property and thermal stability of LiAlO2 substrate

The hydrolytic property and thermal stability of LiAlO2 (LAO), important factors for its application, were examined by AFM and X-ray rocking curve. We found that H2O may be deleterious for LAO surface polishing when the root mean square (RMS) value is less than 1 nm. However, when the RMS value is more than 1 nm it may be useful for LAO polishing. (100)-plane LAO substrates are annealed in the range of 850-900 degrees C in flux N-2, Slick AlN layer probably is produced on the substrate surface. M-plane GaN layer has grown on the substrate by metal-organic chemical vapor deposition (MOCVD) method. Theses results show that LiAlO2 crystal is a promising substrate of fabricating high-efficiency LEDs by MOCVD. (c) 2006 Elsevier B.V. All rights reserved.

Cr4+在八面体格位中的光谱特性研究

Cr-doped and Mg, Cr-codoped Al2O3 crystals were grown by Czochralski method. The latter has a broad absorption peak in 900-1600nm region. We investigated the change of the absorption band with annealing under different atmospheres or temperatures. Through establishing a structure defect model, we successfully interpreted all the experiment results and confirmed that the extremely broad infrared absorption band belonged to Cr4+, which should occupy the octahedral sites in Al2O3.

激光二极管抽运的高效率低阈值Yb：GSO激光器

近年来，掺Yb离子的晶体备受关注：掺Yb离子晶体能级结构简单，可以避免激发态再吸收、频率上转换、弛豫振荡和浓度猝灭等效应。此外，掺Yb离子晶体的吸收光谱位于900～1000nm，无需严格的温度控制即可与InGaAs激光二极管有效耦合，并且具有很宽范围的荧光发射谱，因此这种晶体很有潜力成为1gm波段的宽调谐及超快激光光源。

Spectral hole-burning of Eu3+: Y2SiO5 crystal at 579.62 mm

By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

LD抽运新型Yb：LYSO晶体实现1085nm激光输出

Yb^3＋激光材料在900～980nm范围具有较强的吸收，能与高效的InGaAs激光二极管（波长为9001100nm）有效地耦合，且能级简单，抽运波长与振荡波长相近，量子效率高。这些优点十分有利于在1000nm附近实现超快高功率激光输出。而随着高性能InGaAs激光二极管的发展和成本的降低，近年来，掺Yb^3＋激光介质的研究受到人们的极大关注，并研制出了许多新型激光晶体，如Yb：YAG，Yb：KYW，Yb：GdVO4，Yb：SYS，Yb：YAB，

VTE法制备γ-LiAlO2／α-Al2O3复合衬底以及腐蚀和退火对其影响

通过气相传输平衡法(VTE)制备了γ-LiAlO2／α-Al2O3复合衬底，使用5％的稀盐酸对其进行腐蚀并在900℃退火72h。利用X射线衍射、偏光显微镜及扫描电镜对复合衬底进行了分析，发现在白宝石α面(11-20)和γ面(1—102)均获得单相多晶的γ-LiAlO2，且后者的择优取向好于前者。腐蚀可以提高样品的择优取向，在5％的稀盐酸中，时间控制在2min左右可获得较好的结果。退火后γ-LiAlO2颗粒质量得到改善，白宝石α面上γ-LiAlO2的质量优于r面上的γ-LiAlO2，两者都出现颗粒长大现象。

退火对Si（111）衬底上ZnO薄膜的结构和发光特性的影响

采用磁控溅射法在硅（111）衬底上制备了C轴高度取向的ZnO薄膜，并研究了退火温度和氧气气氛对ZnO薄膜晶体质量、晶粒度大小和光致发光谱的影响。X射线衍射表明，所有薄膜均为高度C轴择优取向，当退火温度低于900℃时，随着退火温度的升高，薄膜的取向性和结晶度都明显提高。室温下对ZnO薄膜进行了光谱分析，退火后的样品均可观测到明显的紫光发射。在一定的退火温度范围内，还可以观测到明显的紫外双峰。空气中退火的样品，当退火温度达到或高于600℃还可观测到绿光发射。实验结果表明，发光峰强度随退火温度和氧气气氛不同而不

固相法制备Al2（WO4）3粉体及其负热膨胀性能

以Al2O3和WO3为原料，采用固相反应法制备了负热膨胀性能的Al2（WO4）3粉体。用X射线粉末衍射和扫描电镜分别对粉体进行物相、晶体结构分析和形貌观察；通过热重-差热分析了粉体的热性能；采用热膨胀仪测定了热膨胀系数。结果表明：产物为高纯度正交晶系结构的Al2（WO4）3，形状规则，大小均匀，平均尺寸为0．6μm×0．4μm。从室温到熔点范围内，Al2（WO4）3粉体无相变，不发生分解，30～900℃的平均热膨胀系数为-1．56×10^-6K^-1。

提拉法Ti:LiAlO_2晶体的生长、缺陷及N_2退火研究

本文采用提拉法成功地生长了钛掺杂浓度为0.1%原子分数的LiAlO2单晶体,借助光学显微镜,结合化学腐蚀法,对Ti:LiAlO2晶体(100)面空气退火前后的缺陷特征进行了研究,用AFM观测了(100)面晶片在不同温度下流动N2气氛退火过的表面形貌。结果表明:Ti:LiAlO2晶体(100)面的位错腐蚀坑是底面为平行四边形的锥形坑,位错密度约为5.0×104cm-2,900℃空气退火后晶片表面的位错腐蚀坑变大;N2退火能显著影响晶片的表面形貌,当退火温度为900℃时,晶片的均方根粗糙度(RMS)达到最低值