用VTE方法在蓝宝石衬底上生长γ-LiAlO2薄膜

利用气相传输平衡技术(VTE)和后退火处理工艺在(0001)蓝宝石衬底上获得了高度[100]取向的γ-LiAlO2薄膜．X射线衍射表明是由单相的γ-LiAlO2所组成,此薄膜经850～900℃／120h空气中退火处理后显示出高度的[100]取向,这一实验结果意味着有望通过VTE方法制备用于GaN基器件外延生长的γ-LiAlO2(100)-Al2O3(0001)复合衬底.

Using vapor transport equilibration (VTE) technique and post-annealing processing, we succeeded in the fabrication of gamma/-LiAlO2 layer with a highly-preferred orientation of [100] on (0001) sapphire crystal. X-ray diffraction indicates that the as-fabricated layer by VTE is a polycrystalline film shown to be a single-phase. When the gamma-LiAlO2 layers are annealed at 850similar to900degreesC for about 120 hours in air, the layers become highly textured with [100] orientation. These results reveal the possibility of fabricating gamma-LiAlO2 (100)// sapphires(0001) composite substrate for GaN-based epitaxial film by VTE.