提拉法Ti:LiAlO_2晶体的生长、缺陷及N_2退火研究

本文采用提拉法成功地生长了钛掺杂浓度为0.1%原子分数的LiAlO2单晶体,借助光学显微镜,结合化学腐蚀法,对Ti:LiAlO2晶体(100)面空气退火前后的缺陷特征进行了研究,用AFM观测了(100)面晶片在不同温度下流动N2气氛退火过的表面形貌。结果表明:Ti:LiAlO2晶体(100)面的位错腐蚀坑是底面为平行四边形的锥形坑,位错密度约为5.0×104cm-2,900℃空气退火后晶片表面的位错腐蚀坑变大;N2退火能显著影响晶片的表面形貌,当退火温度为900℃时,晶片的均方根粗糙度(RMS)达到最低值

0.1at% Ti doped LiAlO2 crystal was grown by Czochralski method.The defects of Ti:LiAlO2(100) slices before and after air annealing were investigated by chemical etching and Leitz optical microscopy.The surface morphologies of Ti:LiAlO2(100) slices annealed in flowing N2 at different temperatures were observed by AFM.The results show that etch pits on(100) plane are pyramidal and the total dislocation density is about 5.0×104cm-2.The size of etch pits on Ti:LiAlO2(100) plane became larger after the slice was...