Apoptotic activity of frog Bombina maxima skin albumin

Albumin, the most abundant protein components of blood plasma, is synthesized and secreted by liver cells in vertebrates. Recently, it was demonstrated that frog Bombina maxima albumin is also expressed in skin. Both B. maxima albumins from skin and serum (BmA-skin and BmAserum) have similar biochemical characteristics except that the former contains haem b. Present studies showed that BmA-skin exhibited cytotoxic activity on H9 and C8166 cells. Pretreated with hemin to induce erythroid differentiation, K562 cells lost their resistance to cytotoxicity of BmAskin. After treating cells with BmA-skin for 48 h, 50 percentage cytotoxic concentrations (CC50) of BmA-skin on H9, C8166 and hemin-treated K562 cells were 1.31±0.09, 1.59±0.08 and 2.28±0.06 μM, respectively. The cell death induced by BmA-skin was mediated by apoptosis of the tested cell lines, as demonstrated by nuclear morphological changes, DNA fragmentation and DNA hypodiploidy of apoptosis cells. At BmA-skin concentration of 2 μM, 27.3%, 19.7% and 17.8% of H9, C8166 and hemin-treated K562 cells were found to be apoptotic. In contrast, BmA-serum possessed no cytotoxic and apoptosis-inducing activity on all the cell lines tested, even with concentration used up to 15 μM. These results indicated that bound haem b in BmA-skin contributed significantly to its cytotoxic and apoptosis-inducing activity on the cell lines assayed.

纳帕海黑颈鹤(Grus nigricollis)越冬行为生态研究

2006年10月～2007年5月，我们采用固定路线调查、瞬时扫描行为取样法对云南纳帕海越冬黑颈鹤的行为时间分配、鹤群结构、栖息地利用等方面作了研究。 黑颈鹤越冬期日间行为主要以觅食和警戒为主，分别为76.81±9.1％和11.84±5.6％，两种行为共占了黑颈鹤日间行为时间分配比例的88.65％；其它几种行为除理羽（5.18±4.2％）、走动（3.37±2.25％）和休息（1.32±1.7％）外，其所占比例均在1％以下，它们分别为：飞行0.59±0.89 ％、鸣叫0.41±0.63％、争斗0.22±0.30％和其它0.22±47％。越冬期中黑颈鹤日间行为具有明显节律性，觅食行为呈早晚双峰型节律，且傍晚的觅食高峰较高。黑颈鹤在纳帕海越冬期间从数量变化上可分为4个时期：1 早期的越冬集散期；2 中期的越冬稳定期；3 晚期的迁飞集散期；4 末期的幼鹤滞留期。鹤群结构及行为在不同的时期之间有着显著的变化。在越冬期中期，黑颈鹤特别是带有幼鹤的繁殖家庭更偏向于选择以家庭为单位的活动形式活动。集群鹤和领域鹤间在行为的时间分配上存在显著差异，集群活动有着集体警戒的优势使得集群鹤有了更多的时间用于觅食，但集群中的繁殖家庭并不能有效的利用这种优势，集群密集活动中高的争斗比例给集群中的幼鹤带更多的威胁，增加了繁殖家庭中成鹤的负担。家庭鹤为了维护领域不受侵犯，付出了更高的警戒时间，而减少了觅食的时间分配，但稳定的环境给幼鹤的稳定成长提供了更可靠的保证。鹤群结构组成的研究表明，繁殖家庭倾向于选择在一定的家庭领域中单独活动，非繁殖成鹤则更多的选择活动在集群中。集群中的幼鹤跟家庭中的幼鹤在觅食、警戒、理羽、走动、休息、争斗等主要行为上并无差异，但集群中的幼鹤的躲避攻击的行为要显著高于家庭活动中的幼鹤，说明了家庭活动对幼鹤有着更好的保护作用，集群中的高争斗行为对幼鹤产生了一定的不利影响。幼鹤和成鹤间行为存在明显差异：幼鹤的觅食比例比较高，略高于集群中的成鹤而显著高于家庭中的成鹤，走动和休息两种行为高于成鹤，相反鸣叫、争斗行为低于成鹤。这说明，幼鹤在活动中的警戒作用很少，更多时间是用于觅食和休息中，家庭中的幼鹤也并不更多的承担警戒和维护家庭领域的任务，而同样以觅食和休息为主。 越冬鹤群白天栖息地主要有浅水沼泽、农地、草地、猪拱地和开阔水域5种，其中猪拱地与草甸裸地为浅水沼泽和草地的次生生境。5种栖息地中以浅水沼泽利用比例最大为32.26％，其次是猪拱地（31.49％），然后农地（18.01％）和草地（10.91％）；开阔水域最小，只5.55％（图11）。这5种栖息地中，农地和猪拱地中鹤群的觅食比例最大分别为：78.85％和76.61％，是黑颈鹤越冬季觅食的重要地点之一。草地中鹤群的觅食行为比例（61.63％）相对其它4种栖息地中的觅食比例中最低，相反，移动和休整行为比例最高，是鹤群休息和转换觅食地的场所。鹤群对浅水沼泽的利用率最大，但浅水沼泽中鹤群的觅食比例并不是最高（71.22％），略低于农地和猪拱地中鹤群的觅食比例，这可能是因为沼泽中食物营养比较高，鹤群可以在不高的觅食时间中获取足够的能量造成的。猪拱地和裸泥地的利用率及鹤群在此种栖息地中的觅食比例均较高，仅次于浅水沼泽和农地两种最主要的栖息地类型，说明家畜的影响在一定程度上为越冬鹤群增加了新的觅食地，有利于黑颈鹤的越冬。 纳帕海越冬黑颈鹤春季迁徙时间从3月底开始持续至4月中下旬，2007年春季迁徙共持续时间22天。天气条件和日时间对鹤群的迁徙有着明显的影响，鹤群迁徙主要出现在晴天或多云天气的10:00-12:00段。晴朗的天气有利于形成上升气流，10:00-12:00时间段上升气流最强、最为稳定，能为鹤群迁徙节省最多的能量，有利于鹤群的迁徙。

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.

MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究

报道了用MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性实验研究。已得到77K温度下迁移率为16.2×10~4cm~2/(V·s)的GaAs材料。样品的Hall测量结果表明:在较低的杂质浓度范围(1×10~(13)cm~(-3)＜n＜1×10~(15)cm~(-3))内,在大体相同的生长温度(590℃左右)下,选择适当的生长速率Gr会增强对浅受主杂质的抑制作用,同时也会一致Si的自补偿效应,减小杂质的补偿度N_a/N_d之值,从而提高MBE外延GaAs材料的迁移率。

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.