Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

含二茂铁聚苯胺德合成及电－磁性能研究

本论文将二茂铁基团引入聚苯胺链，合成导电或导磁聚苯胺。取得的主要结果如下： 1、合成了抗磁性的二茂铁单磺酸并用于掺杂聚苯胺，掺杂态聚苯胺的电导率可达2.34´10-1 S/cm，二茂铁单磺酸氧化后掺杂聚苯胺的电子顺磁共振(EPR)上出现了g» 4的新信号。二茂铁单磺酸被FeCl3氧化后，随氧化程度的增加，室温电导率下降1-2个数量级，但材料的磁化率增加，表现出宏观反铁磁性。用I2氧化二茂铁单磺酸掺杂的聚苯胺，其电导率为4.50´10-2 S/cm，在低温下具有铁磁性耦合，外斯温度为15 K。 2、合成了两种草酸根桥联的双金属阴离子与导电聚苯胺的杂化材料。杂化材料同时具有反铁磁性和导电性，外斯温度分别为-19.16 K和-22.10 K，电导率分别为4.8×10-3S/cm和1.2×10-5S/cm。 3、合成了聚邻、间位二茂铁苯胺。可溶的聚邻二茂铁苯胺显示铁磁性，外斯温度为25 K，饱和磁强度为6.89 emu/g。与碘或四氰基对苯醌二甲烷（TCNQ）反应所得配合物的外斯温度分别提高到50 K和104 K，饱和磁强度分别为6.51 emu/g 和4.36 emu/g，在低温下观察到了反铁磁性耦合。难溶的聚间二茂铁苯胺显示宏观抗磁性。 关键词：二茂铁单磺酸，导电导磁性聚苯胺，聚邻二茂铁苯胺，铁磁性耦合

模式识别研究含氮环状化合物的结构与改变性相关

本文设计了一个计算机模式识别系统，并对含氮环状化合的结构与改变性相关进行了研究。目的在于用模式识别寻找规律，予测未知。从含氮环状化合物中，我们选出了有代表性的88个化合物作为研究对象。其中56个有致变性，另外32个无致变性。在结构信息的输入及转化的基础上，我们提取了零阶项到四阶项的分子联接性指数9个特征及10个分子拓扑特征。经特征的选择和予处理之后，我们用K－最近邻法、逐步判别和线性判别三种分类法对这些化合物进行分类。以数据集的四分之三作为训练集，另四分之一作予测集，识别能力可达90％以上，予测率也达80％以上。研究结果不仅得到了从一定角度反映含氮环状化合物的结构与致变性相关的模型，理想的分类、予测也表明模式识别技术在此领域研究的切实可行，也为其它领域的研究提供了可借鉴的研究方法。本系统由10个独立程序模块构成，所有程序用FORTRAN语言写成，在POP－11－24机上调试运行。

HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE

Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells

High-quality compressively strained In0.63Ga0.37As/InP quantum wells with different well widths (1-11 nm) have been grown coherently on InP substrates using a home-made gas source molecular beam epitaxy (GSMBE) system. The indium composition in the wells of the sample was determined by means of high-resolution X-ray diffraction and its computer simulation. it is found that the exciton transition energies determined by photoluminescence (PL) at 10 K are in good agreement with those calculated using a deformation potential model. Sharp and intense peaks for each well can be well resolved in the 10 K PL spectra. For wells narrower than 4 nm, the line width of the PL peaks are smaller than the theoretical values of the line-width broadening due to 1 hit interface fluctuation, showing that the interface fluctuation of our sample is within 1 ML. For wells of 7 and 9 nm, the PL peak widths are as low as 4.5 meV.

隔离电阻对集成光源特性的影响分析

提出了一种分布反馈(DFB)激光器与电吸收(EA)调制器集成光源(EML)的等效电路模型.该模型考虑了由于隔离电阻不够大而导致的激光器与调制器之间的电耦合,通过对电路模型进行仿真可以看出,对于不同隔离电阻的EML,激光器的阈值电流、调制器的频率响应带宽、集成器件的小信号调制和脉冲调制等多方面特性均有明显不同.分析得到,EML的隔离电阻阻值只有达到10 kΩ量级,才能够忽略电泄漏对器件特性的影响.并指出EML在更高的偏置下,将对隔离电阻提出更高的要求.

980 nm InGaAs应变量子阱激光器和掺铒光纤放大器用泵浦源

利用分子束外延技术研制出了高质量InGaAs/GaAs应变量子阱材料及量子阱激光器。在室温和10 K温度下,应变量子阱材料的光荧光峰值半宽分别为32 meV和.4 meV,宽接触激光器的阈值电流密度低达140 A/cm~2。脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为15 mA和0.8 W/A,线性输出功率大于120 mW,基横模输出功率可达100 mW。InGaAs应变量子阱激光器和单模光纤进行了耦合其组合件出纤光功率典型值为40 mW,最大值可达60 mW,显示出了高的基横模输出功率和高的耦合效率。其组合件在40 mW下,中心发射波长在977 nm,成功地研制出适于掺铒光纤放大器用的应变量子阱激光器泵浦源。

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Terahertz Quantum Cascade Laser Operating at 2.94 THz

The development of quantum cascade laser at 2.94 THz is reported. The laser structure is based on a bound-to-continuum active region and a semi-insulating surface-plasmon waveguide. Lasing is observed up to a heat-sink temperature of 70 K in pulsed mode with light power of 4.75 mW at 10 K and 1 mW at 70 K. A threshold current density of 296.5 A/cm(2) and an internal quantum efficiency of 1.57 x 10(-2) per cascade period are also observed at 10 K. The characteristic temperature of this laser is extracted to be T-0 = 57.5 K.

Thermodynamic investigation on properties of gasohol

The heat capacities (C-p) of three types of gasohol (which consisted of 20 wt % ethanol and 80 wt % unleaded gasoline 93(#) (system S1), 30 wt % ethanol and 70 wt % unleaded gasoline 931 (system S2), 40 wt % ethanol and 60 wt % unleaded gasoline 930 (system S3), where "93(#)" denotes the octane number) were measured by adiabatic calorimetry in the temperature range of 80320 K. A glass transition was observed at 94.24, 95.15, and 95.44 K for system S1, S2, and S3, respectively. A solid-solid phase transition and solid-liquid phase transition were observed at 135.18 and 151.30 K for system S1, 131.82 and 152.10 K for system S2, and 121.29 and 155.09 K for S3, respectively. The polynomial equations for C, with respect to the thermodynamic temperature (T), and with respect to the content of ethanol (x), were established through the least-squares fitting. The thermodynamic functions and the excess thermodynamic functions of the three samples were derived using these thermodynamic relationships and equations.

Heat capacities and thermodynamic properties of chrysanthemic acid

The heat capacities of chrysanthemic acid in the temperature range from 80 to 400 K were measured with a precise automatic adiabatic calorimeter. The chrysanthemic acid sample was prepared with the purity of 0.9855 mole fraction. A solid-liquid fusion phase transition was observed in the experimental temperature range. The melting point, T-m, enthalpy and entropy of fusion, Delta(fus)H(m), Delta(fus)S(m), were determined to be 390.741 +/- 0.002 K, 14.51 +/- 0.13 kJ mol(-1), 37.13 +/- 0.34 J mol(-1) K-1, respectively. The thermodynamic functions of chrysanthemic acid, H-(T)-H-(298.15), S-(T)-S-(298.15) and G((T))-G((298.15)) were reported with a temperature interval of 5 K. The TG analysis under the heating rate of 10 K min(-1) confirmed that the thermal decomposition of the sample starts at ca. 410 K and terminates at ca. 471 K. The maximum decomposition rate was obtained at 466 K. The purity of the sample was determined by a fractional melting method.

沈阳城市森林主要树种叶片形态生态特征与生长规律

利用统计和多元分析方法研究了沈阳城市森林10个主要树种叶片的形态生态特征和生长规律.结果表明,影响树木叶片生长发育节律的主要气象因子是≥5℃积温、累积日照时数和各物候期中旬平均温度.不同物候期树木所需要的气象因子有所变化,树木萌动期要求低温和寒冷指数,而在生长期需要一定的温暖指数和湿润指数.10个树种的叶片形态数量特征差异较大,按叶形指数依次为短序胡枝子>华北丁香>国槐>银白杨>红瑞木>金银忍冬>水腊>水曲柳>稠李>黄菠萝;按叶面积依次为华北丁香>银白杨>黄菠萝>稠李>水曲柳>红瑞木>短序胡枝子>金银忍冬>国槐>水腊.在10个树种叶长度与宽度、周长、叶面积之间相互关系中,基本属于异速生长类型,符合y=axk模型,但在叶长度与宽度之间关系中,除银白杨k>1外,其它9个树种均k<1;在叶长度与周长关系中,黄菠萝k>1,银白杨k≈1,呈线性关系,其它树种均k<1;在叶长度与叶面积关系中,10个树种k>1,而银白杨k=2·1028,叶面积增长速率近似于叶长的2倍.建立了10个树种的叶面积最优回归估测模型,并对模型进行了估测检验.

Studies on the nature of the macromolecular condensed state of "nascent" ultra high molar mass polyethylene

Ultra high molar mass polyethylene (UHPE) powder as polymerized in a slurry process has been studied, in its nascent state, after recrystallization on rapid cooling from the melt and after hot compression molding to a film, by DSC, effect of annealing the recrystallized specimen at 120 similar to 130 degreesC, morphology by polarizing optical microscopy and small angle X-ray scattering. Based on the experimental results obtained the macromolecular condensed state of the nascent UHPE powder is a rare case of a multi-chain condensed state of non-interpenetrating chains, involving interlaced extended chain crystalline layers and relaxed parallel chain amorphous layers. On melting, a nematic rubbery state of nanometer size domain resulted. The nematic-isotropic transition temperature was judged from literature data to be at least 220 degreesC, possibly higher than 300 degreesC, the exact temperature is however not sue because of chain degradation at such high temperatures. The recrystallization process from the melt is a crystallization from a nematic rubbery state. The drop of remelting peak temperature by 10 K of the specimen recrystallized from its melt as compared to the nascent state has its origin in the decrease both of the crystalline chain stem length and of the degree of crystallinity. The remelting peak temperature could be returned close to that of the nascent state by annealing at 120 similar to 130 degreesC.

Valence change and luminescence of divalent samarium in strontium berates

The valence change of samarium from trivalent to divalent state in strontium berates (SrB6O10) prepared in air was observed. The high resolution spectra of Sm2+ in matrix were studied between 10 K and 300 K. The results showed that three crystallographic sites for Sm2+ were available in the host. Energy transfer among these sites was possible. The vibronic transition of D-5(0) --> F-7(0) of Sm2+ was studied at room temperature and the Huang-Rhys factor S was calculated. Due to the thermal population, D-5(1) --> F-7(0) transition at room temperature was observed.

Luminescence properties of Sm2+ in barium octaborates (BaB8O13 : Sm2+)

The luminescence of Sm2+ in BaB8O13 are studied as a function of temperature. At 10 K, several crystallographic sites for Sm2+ ions with inversion symmetry are possible and D-5(0) --> F-7(1) transition show predominant intensities, whereas above 50 K two crystallographic sites without inversion symmetry are clearly observed for Sm2+ in BaB8O13 and the D-5(0) --> F-7(0) transition show strongest intensity. The vibronic transitions and the non-radiative transitions of Sm2+ are studied and a coupled-phonon energy about 50 cm(-1) is obtained. The thermal effects on the line shift, emission intensities, half-width and lifetime of the D-5(0) --> F-7(0) transition are also studied. The decay curves at different temperatures are all in single exponential and are temperature-independent with lifetime around 3.5 ms. (C) 1999 Elsevier Science B.V. All rights reserved.