520 resultados para intermediate energy heavy-ion beam


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应用不同能量、不同剂量的碳离子和氧离子加照普通小麦,研究其M1代和M2代的生物学(形态)性状、染色体畸变率及微核率、生理生化和DNA分子等方面的变化。并对这些变化的生物学机理进行了探讨,结果如下:1.75MeV/u~(16)O~(8+)离子经过适当降能后注入小麦种子的不同部位和贯穿整个种子,对其M1代幼苗的可溶性蛋白质组分以及电脉中不同区段蛋白质组分相对含量加以分析,结果表明:1)同对照相比,随着辐照剂量的增加,所有辐照材料(包括贯穿和注入)第二区段(分子量较高区段)蛋白质组分的相对含量下降;而第五区段(分子量最小区段)蛋白质组分的相对含量升高。2)种子的贯穿处理,同时也引起第一区段(分子量最高区段)和第三区段蛋白质组分相对含量的下降以及第四区段的升高;其中第三、四区段的变化明显区别于注入效应。3)注入胚和胚乳的区别在于后者第一区段蛋白质组分相对含量的较大下降和第五区段的较大提高。4)小剂量辐照的材料,可溶性蛋白质组分的变化异常,可能与低剂量辐射兴奋效应有关。2.碳离子注入胚乳引起胚的后代发生变异,是典型的重离子诱变产生间接效应的结果。主要表现为:1)M1代的生物学性状、幼苗的抗氧化酶活性、MDA含量、蛋白质含量和染色体畸变率及微核率等发生了较大的变化。2)对其矮杆变异株和紫色茎杆突变体(M2)和RAPD和AFLP分子鉴定等研究,结果显示了矮杆变异体和紫色茎杆突变体的DNA序列发生了改变,而非仅仅产生生理损伤;同一种变异体或突变体,在M2代单株间也存在着明显的差异,表明它们可能还处于分离状态。于是,将M2代以上高代再种,以观察遗传能否稳定。3.重离子辐照普通小麦种子的M1代正常(它们可以完成生长发育的过程)植株同对照材料做正、反交,获得染色体组等来源不同的材料。接着对对照、M2代和正、反交材料DNA进行RAPD和AFLP多态性研究,并将实验结果作统计分析,结果表明:在细胞结构层次上,染色体组作为靶物质,产生的直接效应主要引起随机突变;而非染色体组的细胞组成的间接效应主要引起非随机突变。

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中能重离子碰撞中的核反应机制及其形成的高激发热核的性质是中能重离子物理研究的重要领域,而高激发热核性质的同位旋效应研究是这一领域的热点之一。选取了具有不同N亿比的反应体系以研究激发热核性质的同位旋效应。本论文涉及的反应系统三对共六个反应体系:55MeV/u~(40)Ar+~(58.64)Ni、30MeV/u~(40)Ar+~(112,124)Sn、35Mev/u~(36)Ar+~(112,124)Sn,这六个反应体系的N/z比分别为1.13,1.26、1.24,1.41、1.18,1.35。分别从带电粒子多重性、相对态布居核温度、关联函数等角度研究了这三对反应体系高激发热核性质的同位旋效应。在55MeV/u 40Ar+58,64Ni核反应中,用兰州4π带电粒子探测器阵列测量带电粒子多重性,研究了He和中等质量碎片的产额与反应系统的同位旋的关系,以及这种同位旋效应与反应系统的碰撞参数(即碰撞的激烈程度)、系统的激发能的变化关系。对两个反应系统,观察到带电粒子多重性中He的比分随带电粒子多重性的增加而增大,带电粒子多重性中IMF的比分随带电粒子多重性的增加而先增大,后减小的规律。两个反应系统虽然具有相同的核电荷数,但轻粒子He和中等质量碎片在多重性中的比分有明显的同位旋相关性。在30Mev/u40Sn、35MeV/u~(40)Ar~(112,124)Sn、35Mev/u 36Ar+112,124Sn反应中用13单元望远镜探测器阵列测量了小角关联粒子。由价a关联函数提取了30Mev/u 40Ar+112,12Sn反应系统中激发热核的态布居核温。对于不同同位旋反应系统舜UAr+112Sn和4VAr+124Sn,提取的相对杰布居核温度分别是4.18+0.28/0.21MEV和4.10士0.22/0.20MeV;考察态布居核温度和粒子能量的关薰时,观察到两个系统的发射温度均随着粒子能量的增加而降低,缺中子系统40Ar+l12Sn中由低能时的5.13士.30/0.26MEV降低到高能时的3.87士0.37/0.29MeV,丰中子系统40Ar+124Sn中由低能时的5.39士0.30/0.26MeV降低到高能时的3.32士MeV。讨论了这种布居态核温度的同位旋相关性。在35Mev/u 36Ar+112,124Sn反应中提取了洲F(3‘25)的约化速度关联函数。相对丰中子36Ar+124Sn系统的IMF关联函数在小约化速度处反关联程度更强,表明36Ai+124Sn系统的发射IMF的平均时间更短。用MENEKA程序提取了两个系统IMF的平均发射时间,36Ai+112sn反应中IMF的发射时间约为150fm/c,而36Ar十124Sn反应IME的发射时间稍短,约为120fm/c。以关联IMF的单核子总能量/动量为窗条件,发现低能IMF关联函数几乎没有差别,而高能IMF关联函数在小约化速度处的差别更为明显,表明两个系统IMF关联函数的同位旋效应可能来自于IMF的早期发射。为了得到进一步的信息,我们提取了高动量窗条件下的IMF发射时间,它们比平均发射时间短,36Ar+112Sn反应中高能IMF的发射时间约为100蒯c,而36Ai+124Sn反应中IMF的发射时间则更短,约为50fm/c。

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本文建立了生物组织中最重要成分--液态水中的重离子径迹结构Monte Carlo计算模型,用它来研究重离子径迹内的能量沉积分布。最终将计算结果同实验值或其它#dalta#射线理论计算结果进行了比较。另外,由模型的电子传输慢化部分或OREC和CPA程序计算得到的单电子径迹中的绝对和相对能量沉积频率结果来看,这些单径迹效应结果都支持了低能重离子注入造成深部生物效应的作用机理--软x射线机制。本文的目的在于建立细胞损伤强度和损伤范围与重离子参量之间的关系,从理论上探讨重离子生物效应的机理

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The thermal properties of a micro-electromechanical system sensor were analysed by a novel digital moire method. A double-layer micro-cantilever sensor (60 mu m long, 10 mu m width and 2 mu dm thick) was prepared by focused ion beam milling. A grating with frequency of 5000 lines mm- I was etched on the cantilever. The sensor was placed into a scanning electron microscope system with a high temperature device. The observation and recording of the thermal deformation of the grating were realised in real-time as the temperature rose from room temperature to 300 degrees C at intervals of 50 degrees C. Digital moire was generated by interference of the deformed grating and a digital virtual grating. The thermal properties including strain distribution of the sensor and the linear expansion coefficient of polysilicon were accurately measured by the phase-shifted moire patterns.

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采用玻璃包覆的方法获得具有较大过冷度的亚共晶、共晶以及过共晶Ag-Ge合金熔体,并通过高能离子束轰击Cu箔产生Cu原子团簇溅射到过冷合金熔体中来触发非均质形核过程.凝固后合金显微组织的分析结果表明:在深过冷合金熔体中引入Cu原子团簇,它对亚共晶、共晶以及过共晶Ag-Ge合金的显微组织演变有着不同的影响效果,分析了显微组织的演变规律与形成机制. The Ag-Ge alloy melts with deeply undercooled hypoeutectic, eutectic and hypereutectic were obtained via glass fluxing technique. The nucleation of the deeply undercooled alloy melts were triggered by atoms cluster sputtering on the surface of the melts. The atoms clusters were generated by an ion beam bombarding on the Cu foil fixed above the alloy melts. The resultant microstructure reveals that the induced atom clusters exert great influence on the microstructural evolution of the highly undercooled eutectic and hypereutectic Ag-Ge alloys, but no obvious influence on the highly undercooled hypoeutectic alloy. The microstructural evolution and formation mechanism were analyzed and discussed.

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Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

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The interface of a laser-discrete-quenched steel substrate and as-deposited chromium electroplate was investigated by ion beam etching, dissolving-substrate-away and using a Vickers microhardness tester, in an attempt to reveal the mechanism that the service life of the chromium-coated parts is increased by the duplex technique of laser pre-quenching plus chromium post-depositing. The laser quenching of the steel substrate can reduce the steep hardness gradient at the substrate/chromium interface and improve the load-bearing capacity of chromium electroplate. Moreover, the laser quenching prior to plating has an extremely great effect on the morphologies and microstructure of the substrate/chromium interface: there is a transient interlayer at the original substrate/chromium interface while there is not at the laser-quenchedzone/chromium interface; the near-substrate surface microstructure and morphologies of the free-standing chromium electrodeposits, whose substrate was dissolved away with nital 30% in volume, inherit the periodically gradient characteristics of the laser-discrete-quenched substrate surface. (c) 2006 Elsevier B.V. All rights reserved.

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用离子束溅射法制备了锆单层薄膜.用设计新型夹具和预置种子方法,对薄膜中结瘤微缺陷的生长过程进行了研究.在高分辨率光学显微镜和扫描电子显微镜下观察发现,结瘤在其生长初期呈现出分形的特征.用分子动力学和薄膜生长的扩散限制聚集模型,薄膜中结瘤微缺陷成核时的分形现象得到了很好的解释.

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The origin, character, analysis and treatment of subsurface damage (SSD) were summarized in this paper. SSD, which was introduced to substrates by manufacture processes, may bring about the decrease of laser-induced damage threshold (LIDT) of substrates and thin films. Nondestructive evaluation (NDE) methods for the measurement of SSD were used extensively because of their conveniences and reliabilities. The principle, experimental setup and some other technological details were given for total internal reflection microscopy (TIRM), high-frequency scanning acoustic microscopy (HFSAM) and laser-modulated scattering (LMS). However, the spatial resolution, probing depth and theoretic models of these NDE methods demanded further studies. Furthermore, effective surface treatments for minimizing or eliminating SSD were also presented in this paper. Both advantages and disadvantages of ion beam etching (IBE) and magnetorheological finishing (MRF) were discussed. Finally, the key problems and research directions of SSD were summarized. (c) 2005 Elsevier GmbH. All rights reserved.

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Used in chirped-pulse amplification system and based on multi-layer thin film stack, pulse compressor gratings (PCG) are etched by ion-beam and holographic techniques. Diffraction efficiency and laser-induced damage threshold rely on the structural parameters of gratings. On the other hand, they depend greatly on the design of multi-layer. A theoretic design is given for dielectric multi-layer, which is exposed at 413.1 nm and used at 1053 nm. The influences of coating design on optical characters are described in detail. The analysis shows that a coating stack of H3L (H2L) (boolean AND) 9H0.5L2.01H meets the specifications of PCG well. And there is good agreement of transmission between experimental and the theoretic design. (c) 2005 Elsevier GmbH. All rights reserved.

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应用于啁啾脉冲放大技术中的脉宽压缩光栅是基于多层膜作为基底,利用全息干涉技术和离子束技术刻蚀而成。脉宽压缩光栅的衍射效率和抗激光损伤阈值一方面依赖于光栅结构的设计,另一方面很大程度上取决于作为基底的多层膜的设计。给出了以413.1nm作为写入波长,1053nm作为使用波长的多层介质光栅膜的设计.样品在ZZS-800F、型真空镀膜机上采用电子束蒸发方式沉积而成,并给出了膜系结构对光学性能影响因素的详细分析,结果表明膜系H3L(H2L)^9H0.5L2.03H满足光栅膜的指标。给出了样品光学特性测试,其使用波

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We design and experimentally demonstrate some negative dispersion mirrors with optimized Gires-Tournois interferometers. The mirror structure is composed of 38 alternating Ta2O5 and SiO2 layers and could be regarded as two sections: high-reflectivity section consisting of a series of quarter-wavelength optical thickness stacks and negative-dispersion section consisting of only 13 layers. The designed mirrors exhibit the expected performance. These mirrors were fabricated by using ion beam sputtering. By adopting such mirrors, dispersion of a mode-locked femtosecond Ti:sapphire laser has been compensated for mostly. With two series of the mirrors, 32 fs and 15 fs pulses have been obtained respectively.

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Zinc oxide (ZnO) films with c-oriented were grown on fused quartz glass substrates at room temperature using dc reactive magnetron sputtering. The as-grown films were annealed at 700 degrees C in air and bombarded by ion beam, respectively. The effects of post-treatments on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. The XRD spectra indicate that the crystal quality of ZnO films has been improved by both the post-treatments. Compared with the as-grown sample, both annealed and bombarded samples exhibited blueshift in the UV emission peaks, and a strong green emission was found in the annealed ZnO film. In both optical transmittance and absorption spectra, a blueshift of the band-gap edge was observed in the bombarded film, while a redshift was observed in the annealed film. (c) 2004 Elsevier B.V. All rights reserved.

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介绍了在激光薄膜中End—Hall型离子源离子柬清洗的应用。通过实验验证了基片的二次污染和离子柬的清洗效果,观测了离子柬清洗前后基片的表面形貌变化。研究了用离子柬清洗基片时对薄膜抗激光损伤阈值的作用。分析了用离子束清洗基片时其基片表面的性质,如清洁度、表面能、接触角、表面形貌的变化机理。指出了杂质微粒的去除和附着力的增加是如何使薄膜抗激光损伤阈值显著提高的。

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根据飞秒脉冲锁模钛宝石激光器脉冲压缩的要求,介绍了负色散镜补偿色散的基本原理及其特点。详细阐述了优化Gires-Tournois(OG-T)镜的设计过程,并通过计算机优化得到理想设计膜系。采用离子束溅射的方法镀制了优化Gires—Tournois镜。测量了优化Gires-Tournois镜(编号为OGT#1)的透射率和群延迟色散,并与设计值进行了比较,分析了实测值产生偏差的原因,从而对镀膜参量进行了相应的调整,制造了第二批优化Gires—Tournois镜(编号为OGT#2)。将优化Gires—Tourn