Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Heteroepitaxy of cubic GaN: influence of interface structure

We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

On the surface sites Of MOP/SiO2 catalyst under sulfiding conditions: IR spectroscopy and catalytic reactivity studies

The surface sites of MoP/SiO2 catalysts and their evolution under sulfiding conditions were characterized by IR spectroscopy using CO as the probe molecule. The HDS activities of thiophene were measured on the MoP/SiO2 catalyst that was subjected to different sulfidation and reactivation pretreatments. Cus Modelta+ (0 < delta less than or equal to 2) sites are probed on the surface of fresh MoP/SiO2 by molecularly adsorbed CO, exhibiting a characteristic IR band at 2045 cm(-1). The surface of MoP/SiO2 is gradually sulfided in HDS reactions, as revealed by the shift of the IR band at 2045 to ca. 2100 cm(-1). Although the surface of a MoP/SiO2 catalyst becomes partially sulfided, the HDS activity tests show that MoP/SiO2 is fairly stable in the initial stage of the HDS reaction, providing further evidence that molybdenum phosphide is a promising catalytic material for industrial HDS reactions. Two kinds of surface sulfur species are formed on the sulfided catalyst: reversibly and irreversibly bonded sulfur species. The MoP/SiO2 catalyst remains stable in the HDS of thiophene because most sulfur species formed under HDS conditions are reversibly bonded on the catalyst surface. A detrimental effect of presulfidation on the HDS activity is observed for the MoP/SiO2 catalyst treated by H2S/H-2 at temperatures higher than 623 K, which is ascribed to the formation of a large amount of the irreversibly bonded sulfur species. The irreversibly sulfided catalyst can be completely regenerated by an oxidation and a subsequent reduction under mild conditions. (C) 2003 Elsevier Inc. All rights reserved.

Carbon monoxide adsorption on molybdenum phosphides: Fourier transform infrared spectroscopic and density functional theory studies

Molybdenum phosphide (MoP) and supported molybdenum phosphide (MoP/gamma-Al2O3) have been prepared by the temperature-programmed reduction method. The surface sites of the MoP/gamma-Al2O3 catalyst were characterized by carbon monoxide (CO) adsorption with in situ Fourier transform infrared (FT-IR) spectroscopy. A characteristic IR band at 2037 cm(-1) was observed on the MoP/gamma-Al2O3 that was reduced at 973 K. This band is attributed to linearly adsorbed CO on Mo atoms of the MoP surface and is similar to IR bands at 2040-2060 cm(-1), which correspond to CO that has been adsorbed on some noble metals, such as platinum, palladium, and rhodium. Density functional calculations of the structure of molybdenum phosphides, as well as CO chemisorption on the MoP(001) surface, have also been studied on periodic surface models, using the generalized gradient approximation (GGA) for the exchange-correlation functional. The results show that the chemisorption of CO on MoP occurred mainly on top of molybdenum, because the bonding of CO requires a localized mininum potential energy. The adsorption energy obtained is DeltaH(ads) approximate to -2.18 eV, and the vibrational frequency of CO is 2047 cm-1, which is in good agreement with the IR result of CO chernisorption on MoP/gamma-Al2O3.

A Mossbauer study of In-Fe2O3/HZSM-5 catalysts for the selective catalytic reduction of NO by methane

The selective catalytic reduction of NO by CH4 was compared over In-Fe2O3/HZSM-5 catalysts prepared by impregnation and co-impregnation methods. It was found that the catalyst preparation method greatly affected the catalyst activity. The impregnated catalyst was very active, but the co-impregnated one showed poor activity. The In Fe2O3/HZSM-5 catalysts were investigated by Mossbauer spectroscopy. The results showed that indium cations entered into the iron oxide lattice in the co-impregnated catalyst, while the impregnated catalyst exhibited a more stable structure, when both of the catalysts were treated severely in the reaction atmosphere. Characterization by means of combined in situ temperature programmed reduction (TPR)- Mossbauer spectroscopy further revealed that the performances of the two catalysts were different in the TPR processes.

Synthesis and near-infrared luminescent properties of some ruthenium complexes

A series of seven ruthenium complexes with different ligands were synthesized and their optical, electrochemical and photoluminescent properties were characterized. Electroluminescent properties of these complexes were further evaluated using a light-emitting electrochemical cell with a configuration of indium tin oxide (ITO)/complex (100 nm)/Au (100 nm).

A sensitive NADH and glucose biosensor tuned by visible light based on thionine bridged carbon nanotubes and gold nanoparticles multilayer

A NADH and glucose biosensor based on thionine cross-linked multiwalled carbon nanotubes (MWNTs) and Au nanoparticles (Au NPs) multilayer functionalized indium-doped tin oxide (ITO) electrode were presented in this paper. The effect of light irradiation on the enhancement of bioelectrocatalytic processes of the biocatalytic systems by the photovoltaic effect was investigated.

Magnet-assisted assembly of 1-dimensional hollow PtCo nanomaterials on an electrode surface

In this work, rapid and controllable confinement of one-dimensional (1D) hollow PtCo nanomaterials on an indium tin oxide (ITO) electrode surface was simply realized via magnetic attraction. The successful assembly was verified by scanning electron microscopy (SEM) and cyclic voltammetry, which showed that a longer exposure time of the electrode to the suspension of these 1D hollow nanomaterials (magnetic suspension) led to a larger amount of attached 1D hollow PtCo nanomaterials.

Facile electrochemical approach to fabricate hierarchical flowerlike gold micro structures: Electrodeposited superhydrophobic surface

A templateless, surfactantless, electrochemical approach is proposed to directly fabricate hierarchical flowerlike gold microstructures (HFGMs) on an indium tin oxide (ITO) substrate. The as-prepared HFGMs have been characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and cyclic voltammetry.

Facile electrochemical route to directly fabricate hierarchical spherical cupreous micro structures: Toward superhydrophobic surface

A templateless, surfactantless, electrochemical route is proposed to directly fabricate hierarchical spherical cupreous microstructures (HSCMs) on an indium tin oxide (ITO) substrate. The as-prepared HSCMs have been characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).