Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

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The Fabrication of Eight-Channel DFB Laser Array Using Sampled Gratings

An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. Selective lasing at different wavelengths is obtained. The frequency separation between each adjacent channel is about 200 GHz. The typical threshold current is between 30 and 40 mA. The optical output power of each channel is about 10 mW at an injection current of 100 mA. The continuous tuning of emission wavelength with injected currents is also demonstrated.

Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.

The fabrication of TiO2-supported zeolite with core/shell heterostructure for ethanol dehydration to ethylene

The TiO2-supported zeolite with core/shell heterostructure was fabricated by coating aluminosilicate zeolite (ASZ) on the TiO2 inoculating seed via in situ hydrothermal synthesis. The catalysts were characterized by transmission electron microscope (TEM), X-ray diffraction (XRD), nitrogen physisorption (BET), and Fourier transform infrared spectroscopy (FT-IR). The surface acidity of the catalysts was measured by pyridine-TPD method. The catalytic performance of the catalysts for ethanol dehydration to ethylene was also investigated. The results show that the TiO2-supported zeolite composite catalyst with core/shell heterostructure exhibits prominent conversion efficiency for ethanol dehydration to ethylene.

Tunable Ag surface-plasmon-resonance wavelength and its application on the photochromic behavior of TiO2-Ag films

Surface and bulk plasmon resonance of noble metal particles play an essential role in the multicolor photochromism of semiconductor systems containing noble metal particles, Here we examined several key parameters affecting surface plasmon resonance wavelength (SPRW) of Ag particles and investigated the relation between surface plasmon and photochromic reaction wavelength. From the transmission spectra of sandwiched (TiO2/Ag/TiO2) and overcoated (Ag/TiO2) films deposited on quartz substrates at room temperature by rf helicon magnetron sputtering, we demonstrated that the SPRW can be made tunable by changing the surrounding media and thickness of the metal layer. The coloration and bleaching in visible light region due to photochromism were clearly observed for the films inserted with a 0.55 nm Ag layer.

Spectroscopic ellipsometry study of In2O3 thin films

In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

Fabrication of microstructured polymer optical fiber preform

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