A silicon light emitting devices in standard CMOS technology

A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS technology. The device can give more than 1 muW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V The external electrical-optical conversion efficiency is more than 10(-6). The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.

Few-cycle spatiotemporal soliton wave excited by filamentation of a femtosecond laser pulse in materials with anomalous dispersion

The nonlinear dynamics of 1.6-mu m fs laser pulses propagating in fused silica is investigated by employing a full-order dispersion model. Different from the x-wave generation in normally dispersive media, a few-cycle spatiotemporally compressed soliton wave is generated with the contrary contributions of anomalous group velocity dispersion (GVD) and self-phase-modulation. However, at the tailing edge of the pulse forms a shock wave which generates separate and strong supercontinuum peaked at 670 nm. It is also the origin of conical emission formed both in time and frequency domain with the contribution of normal GVD at visible light.

基于傅里叶变换的光纤探头光谱特性校正方法的研究

针对光纤自身对光谱的非线性衰减的影响，提出了一种基于傅里叶变换的光谱校正方法。首先对是否经过光纤的两种情况下光电倍增管的输出电流进行傅里叶变换，得到光谱频域中的校正函数，然后通过傅里叶逆变换得到光谱域中的校正函数。为实现测试，建立一个光电检测系统，在可见光范围内进行测试。分别对是否带有光纤的两种情况下数据进行采集，使用该校正方法可以使光线的衰减得到较好的修正，误差小于1．54％。实验结果表明，该方法对特定的光纤传导系统的光谱非线性衰减有较好的校正效果。

A wideband sensitive holographic photopolymer

A novel wideband sensitive dry holographic photopolymer sensitized by rose bengal (RB) and methylene blue (MB) is fabricated, the holographic storage characteristics of which are investigated under different exposure wavelengths. The result shows that the sensitive spectral band exceeds 200 nm in visible light range, the maximum diffraction efficiency under different exposure wavelengths is more than 40% and decreases with the decrease of exposure wavelength, the exposure sensitivity is not change with the exposure wavelength. This photopolymer is appropriate for wavelength multiplexing or multi-wavelength recording in digital holographic storage.

Photoluminescence of undoped and B-doped ZnO in silicate glasses

Photoluminescence of undoped and B-doped ZnO in silicate glasses was investigated by varying the concentration of ZnO (3550 mol%) and B dopant (0-10 mol%) in the glass matrices. The broad and intense near band edge emissions were observed while the visible light emission was very weak. UV luminescence in all samples was red-shifted relative to the exciton transition in bulk ZnO and enhanced by decreased ZnO concentration due to higher degree of structural integrity and the lower aggregation degree of ZnO. Donor B dopant played the double roles of filling conduction bands to broaden band gap when its concentration was lower than 5 mol%, and emerging with conduction bands to narrow the gap when B dopant exceeded this value. (c) 2007 Elsevier B.V. All rights reserved.

基于上转换发光技术的生物传感器及其应用

为实现对特定生物分子的高灵敏度快速检测与分析。采用上转换发光材料作为标记物，研制成功一台基于上转换发光技术的新型光学免疫生物传感器。该传感器利用上转换发光材料在红外光激发下发射可见磷光的特性，通过对免疫层析试纸条上经生物反应而结合上去的上转换发光材料颗粒的含量进行检测，计算出被测样品中特定生物分子的浓度。实验结果表明，该传感器具有较好的生物特异性，对兔抗鼠疫免疫球蛋白(IgG)标准样品的检测灵敏度达到ng／ml量级，并在200～6000ng／ml浓度范围内具有良好的线性响应特性，相关系数R^2≥0．95；

射频磁控溅射法制备TiO2-xNX薄膜的结构性能研究

利用射频磁控溅射法室温下在Si（100）衬底上制备了N掺杂的TiO2薄膜，并且采用x射线衍射（XRD）、X射线光电子能谱（XPS）和透射光谱对薄膜进行了表征。XRD结果表明在纯Ar和N2（33．3％）／Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相，薄膜结晶性良好，呈高度（211）择优取向，而在N2（50．0％）／Ar下制备的薄膜结晶性明显变差；对于N掺杂的TiO2薄膜，XPS表明部分N原子进入TiO2晶格，并且以N—Ti—O、N—O键以及间隙式N原子形式存在；透射光谱表明掺N后的TiO2薄膜吸收边发生了红移。

ZnO : Zn phosphor thin films prepared by face-to-face annealing

ZnO:Zn phosphor thin films were prepared by face-to-face annealing at 450 degrees C in air. The effects of the face-to-face annealing on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. Measurement results showed that the crystal quality of ZnO films was improved by face-to-face annealing. Both UV light emission and visible light emission were enhanced compared to those of open annealing films. The UV emission peak was observed to have a blueshift towards higher energy. The optical band-gap edge of as-annealed films shifted towards longer wavelength. (c) 2005 Elsevier B.V.. All rights reserved.

Single UV excitation of Hoechst 33342 and propidium iodide for viability assessment of rhesus monkey spermatozoa using flow cytometry

Many fluorescent probes excited by visible light have been used to assess sperm quality by flow cytometry. Developing a viability evaluation method using UV excited stains would be useful for multiparameter analysis of sperm function. This investigation was conducted to determine the efficacy of Hoechst 33342 (H342) and propidium iodide (PI) dual staining for evaluating rhesus monkey sperm viability through use of flow cytometry and excited by a single UV laser. The results showed that the live cells stained only with H342 strongly correlated with expected sperm viability, and flow cytometric analyses were highly correlated with fluorescence microscopic observation. Using H342/PI/SYBR-14 triple staining method, it was found that the live/dead sperm distributions were completely concordant in both H342/PI and SYBR-14/PI assays. In addition, this dual staining was extended with fluorescein isothiocyanate-conjugated peanut agglutinin (FITC-PNA) to simultaneously analyze viability and acrosome integrity of sperm cryopreserved using two different extenders, TTE and TEST, and indicated that TTE offered better Preservation of plasma and acrosome integrity than TEST Therefore, the H342/PI dual staining provides an accurate technique for evaluating viability of rhesus monkey sperm and should be valuable for multiparameter flow cytometric analysis of sperm function.

Design of Narrow-Gap TiO2: A Passivated Codoping Approach for Enhanced Photoelectrochemical Activity

To improve the photoelectrochemical activity of TiO2 for hydrogen production through water splitting, the band edges of TiO2 should be tailored to match with visible light absorption and the hydrogen or oxygen production levels. By analyzing the band structure of TiO2 and the chemical potentials of the dopants, we propose that the band edges of TiO2 can be modified by passivated codopants such as (Mo+C) to shift the valence band edge up significantly, while leaving the conduction band edge almost unchanged, thus satisfying the stringent requirements. The design principle for the band-edge modification should be applicable to other wide-band-gap semiconductors.

Photoluminescence from Er-doped Si-in-SiNx thin films

Photoluminescence from Er3+-implanted Si-in-SiN, films emitting efficiently visible light were investigated. A Stark structure in the Er3+ photoluminescence spectrum was observed at room temperature, which reveals more than one site symmetry for the Er3+-centers in the Si-in-SiN, matrix. The correlation between the visible photoluminescence from the silicon nanoparticles and the 1.54 mu m emission from the Er3+-centers was discussed. (c) 2006 Elsevier B.V. All rights reserved.

Amorphous silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 degreesC turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10(12) cm(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiOx and Si-in-SiNx thin films. Without altering the size or structure of the particles, a post-annealing at 300 degreesC for 2 min raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.

Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 degreesC to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. (C) 2002 American Institute of Physics.

Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films

Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into SiO2 layers on Si substrate have been measured at room temperature. Their dependence on annealing temperature was investigated in detail. The PL peaks observed in the as-implanted sample originate from the defects in SiO2 layers caused by ion implantation. They actually disappear after thermal annealing at 800 degrees C. The PL peak from silicon nanocrystals was observed when thermal annealing temperatures are higher than 900 degrees C. The PL peak is redshifted to 1.7 eV and the intensity reaches maximum at the thermal annealing temperature of 1100 degrees C. The characterized Raman scattering peak of silicon nanocrystals was observed by using a right angle scattering configuration. The Raman signal related to the silicon nanocrystals appears only in the samples annealed at temperature above 900 degrees C. It further proves the formation of silicon nanocrystals in these samples. (C) 2000 American Institute of Physics. [S0021-8979(00)00215-2].

Bloch oscillation under a bichromatic laser: Dynamical delocalization and localization, persistent terahertz emission, and harmonics generation

A novel AC driving configuration is proposed for biased semiconductor superlattices, in which the THz driving is provided by an intense bichromatic cw laser in the visible light range. The frequency difference between two components of the laser is resonant with the Bloch oscillation. Thus, multi-photon processes mediated by the conduction (valence) band states lead to dynamical delocalization and localization of the valence (conduction) electrons, and to the formation and collapse of quasi-minibands. Thus, driven Bloch oscillators are predicted to generate persistent THz emission and harmonics of the dipole field, which are tolerant of the exciton and the relaxation effects.