ZnO : Zn phosphor thin films prepared by face-to-face annealing


Autoria(s): 洪瑞金; 邵建达; 贺洪波; 范正修
Data(s)

2005

Resumo

ZnO:Zn phosphor thin films were prepared by face-to-face annealing at 450 degrees C in air. The effects of the face-to-face annealing on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. Measurement results showed that the crystal quality of ZnO films was improved by face-to-face annealing. Both UV light emission and visible light emission were enhanced compared to those of open annealing films. The UV emission peak was observed to have a blueshift towards higher energy. The optical band-gap edge of as-annealed films shifted towards longer wavelength. (c) 2005 Elsevier B.V.. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/4364

http://www.irgrid.ac.cn/handle/1471x/12759

Idioma(s)

英语

Fonte

洪瑞金;邵建达;贺洪波;范正修.,J. Cryst. Growth,2005,284(3~4):347-352

Palavras-Chave #光学薄膜 #physical vapor deposition #oxides #semiconducting II-VI materials
Tipo

期刊论文