Photoluminescence from Er-doped Si-in-SiNx thin films
| Data(s) |
2007
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|---|---|
| Resumo |
Photoluminescence from Er3+-implanted Si-in-SiN, films emitting efficiently visible light were investigated. A Stark structure in the Er3+ photoluminescence spectrum was observed at room temperature, which reveals more than one site symmetry for the Er3+-centers in the Si-in-SiN, matrix. The correlation between the visible photoluminescence from the silicon nanoparticles and the 1.54 mu m emission from the Er3+-centers was discussed. (c) 2006 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Bian, LF (Bian, Liu Fang); Zhang, CG (Zhang, C. G.); Chen, WD (Chen, W. D.); Hsu, CC (Hsu, C. C.); Ma, LB (Ma, L. B.); Song, R (Song, R.); Cao, ZX (Cao, Z. X.) .Photoluminescence from Er-doped Si-in-SiNx thin films ,OPTICAL MATERIALS,APR 2007,29 (8):1071-1074 |
| Palavras-Chave | #半导体材料 #photoluminescence |
| Tipo |
期刊论文 |
