Methane and carbon dioxide fluxes from a shallow hypereutrophic subtropical Lake in China

Up to now, there have been few studies in the annual fluxes of greenhouse gases in lakes of subtropical regions. The fluxes of methane (CH4) and carbon dioxide (CO2) across air-water interface were measured in a shallow, hypereutrophic, subtropical Lake Donghu (China) over a year cycle, using a static chamber technique. During the year, Lake Donghu emitted CH4 and CO2; the average flux of CH4 and CO2 was 23.3 +/- 18.6 and 332.3 +/- 160.1 mg m(-2) d(-1), respectively. The fluxes of CH4 and CO2 showed strong seasonal dynamics: CH4 emission rate was highest in summer, remaining low in other seasons, whereas CO2 was adsorbed from the atmosphere in spring and summer, but exhibited a large emission in winter. Annual carbon (C) budget across air-water interface in Lake Donghu was estimated to be 7.52 +/- 4.07 x 10(8) g. CH4 emission was correlated positively with net primary production (NPP) and temperature, whereas CO2 flux correlated negatively with NPP and temperature; however, there were no significant relationships between the fluxes of CH4 and CO2 and dissolved organic carbon, a significant difference from boreal lakes, indicating that phytoplankton rather than allochthonous matter regulated C dynamics across air-water interface of subtropical lake enriched nutrient content. (c) 2005 Elsevier Ltd. All rights reserved.

First-principles LDA plus U and GGA plus U study of neptunium dioxide

We have performed a systematic first-principles investigation to calculate the electronic structures, mechanical properties, and phonon-dispersion curves of NpO2. The local-density approximation+U and the generalized gradient approximation+U formalisms have been used to account for the strong on-site Coulomb repulsion among the localized Np 5f electrons. By choosing the Hubbard U parameter around 4 eV, the orbital occupancy characters of Np 5f and O 2p are in good agreement with recent experiments [A. Seibert, T. Gouder, and F. Huber, J. Nucl. Mater. 389, 470 (2009)]. Comparing to our previous study of ThO2, we note that stronger covalency exists in NpO2 due to the more localization behavior of 5f electrons of Np in line with the localization-delocalization trend exhibited by the actinides series.

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Sulfur-induced exciton localization in Te-rich ZnSTe alloy

Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-resolved PL. The sulfur-related exciton emission is found to dominate the radiative recombination at low temperature and is shifted to the low energy with the increase of S concentration. By measuring the PL dependence on temperature and by analyzing the PL decay process, we have clarified the localization nature of the sulfur-related exciton emission. Furthermore, the difference of the localization effect in Te- and S-rich ZnSTe is also compared and discussed. © 2005 American Institute of Physics.

Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

Enhanced near-infrared photoluminescence (PL) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. The PL from the sulfur and copper coimplanted silicon peaked between 70 and 100 K and persisted to 260 K. This result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong PL from sulfur-doped silicon comes from S-Cu isoelectronic complexes [Frens , Phys. Rev. B 46, 12316 (1992); Mason , ibid. 58, 7007 (1998).]. (c) 2007 American Institute of Physics.

Effects of the sulfur pressure on pyrite FeS2 films prepared by sulfurizing thermally iron films

The effect of sulfur vapor pressure in preparing the FeS2 films has been discussed and some incongruous views about sulfur pressure have been clarified in this paper based on experimental results and theoretical analysis. It is shown that lower sulfur pressures than the saturation value only result in poorer crystallization and worse performances, and in other words the FeS2 films could be optimized through improving the sulfur pressure till the saturation point. However for a certain temperature the sulfur pressure is limited by its saturated vapor pressure, and further increase of the sulfur quantity reacted with Fe films has little influence on the structure and properties of the pyrite films. (C) 2003 Elsevier B.V. All rights reserved.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.

The PL "violet shift" of cerium dioxide on silicon

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied front tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of "violet shift" was observed.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Tunable optical properties of nano-Au on vanadium dioxide

The optical properties of Au nanoparticles deposited on thermochromic thin films of VO2 are investigated using spectroscopy. A localized modification on the transmittance spectrum of VO2 film is formed due to the presence of Au nanoparticles which exhibit localized surface plasmon resonance (LSPR) in the visible-near IR region. The position of the modification wavelength region shows a strong dependence on the Au mass thickness and shifts toward the red as it increases. On the other hand, it was found that the LSPR of Au nanoparticles can be thermally tunable because of the thermochromism of the supporting material of VO2. The LSPR wavelength, lambda(SPR), shifts to the blue with increasing temperature, and shifts back to the red as temperature decreases. A fine tuning is achieved when the temperature is increased in a stepwise manner.

Nano-Ag on vanadium dioxide. I. Localized spectrum tailoring

We report on the utilization of localized surface plasmon resonance (LSPR) of Ag nanoparticles to tailor the optical properties Of VO2 thin film. Interaction of nano-Ag with incident light yields a salient absorption band in the visible-near IR region and modifies the spectrum Of VO2 locally. The wavelength of modification occurs in a limited spectral region rather than affects the full spectrum. The wavelength of modification shows a strong dependence on the metal nanoparticle size and shifts toward the red as the particle size or the mass thickness of nano-Ag increases. Also, we found that the wavelength can be shifted into the IR further by introducing a thin layer of TiO2 onto the nano-Ag. Interestingly, with the help of LSPR effects the VO2 film exhibits an anomalous thermochromic behavior in the modification wavelength region, which may be useful in optical switching applications.