Investigation on the static recording characteristic of super-resolution near-field structure with antimony mask layer

Static recording characteristic of super-resolution near-field structure with antimony (Sb) is investigated in this paper. The recording marks are observed by a scanning electron microscopy (SEM), a high-resolution optical microscopy with a CCD camera and an atomic force microscopy (AFM). The super-resolution mechanism is also analyzed based on these static recording marks. Results show that the light reaching on recording layer is composed of two parts, one is the linear transmissive light (propagating field) and the other is the nonlinear evanescent light in the optical near field. The evanescent light may be greatly enhanced in the center of the spot because Sb will transit from a semiconductor to a metal when it is melted under the high laser power irradiation. This local melted area in the spot center may be like a metal tip in the optical near field that can collect and enhance the information that is far beyond the diffraction limit, which leads to the super-resolution recording and readout. (c) 2005 Elsevier Ltd. All rights reserved.

Design and construction of a static tester for blue ray optical storage

Blue ray optical storage is one of the important trends in the area of information storage, and attracts a number of researchers. Static tester for blue ray optical storage plays an important role in storage media research. We designed and constructed a static tester, in which modularization makes it very convenient to expand function. Employment of modulation/demodulation technique weakens test error so as to increase test precision. Focus move mode and the nano-positioners facilitate the relocation of recording marks. Only one laser with wavelength 406.7 nm is used. In this paper, system design and characteristics are represented in detail, and some experimental results are also given to show that the static tester can perform successfully, acting as research platform for blue ray optical storage. (c) 2005 Elsevier GmbH. All rights reserved.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field

The time evolution of the ground state wave function of an exciton in an ideal bilayer system is investigated within the framework of the effective-mass approximation. All of the moduli squared of the ground state wave functions evolve with time as cosine functions after an in-plane electric field is applied to the bilayer system. The variation amplitude and period of the modulus squared of the ground state wave function increase with the in-plane electric field F-r for a fixed in-plane relative coordinate r and fixed separation d between the electron and hole layers. Moreover, the variation amplitude and period of the modulus squared of the ground state wave function increase with the separation d for a fixed r and fixed in-plane electric field. Additionally, the modulus squared of the ground state wave function decreases as r increases at a given time t for fixed values of d and F-r. (c) 2007 American Institute of Physics.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

The effects of gravity and crystal orientation on the dissolution of GaSb into InSb melt and the recrystallization of InGaSb were investigated under microgravity condition using a Chinese recoverable satellite and under normal gravity condition on earth. To investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. The InSb crystal melted at 525 degrees C and then a part of GaSb dissolved into the InSb melt during heating to 706 degrees C and this process led to the formation of InGaSb solution. InGaSb solidified during the cooling process. The experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. Under microgravity, as the Ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. On the contrary, for normal gravity condition, as large amounts of Ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. Also. during the cooling process, needle crystals of InGaSb started appearing and the value of x of InxGa1-xSb crystals increased with the decrease of temperature. The GaSb with the (111)B plane dissolved into the InSb melt much more than that of the (111)A plane. (C) 2000 Elsevier Science B.V. All rights reserved.

Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics of a doped GaAs/AlAs superlattice in the transition process from static to dynamic electric-field domain formation caused by increasing the sample temperature. As the temperature increases, these dynamic dc voltage bands expand within each sawtooth-like branch, squeeze out the static regions, and join up together to turn the whole plateau into dynamic electric-field domain formation. These results are well explained by a general analysis of stability of the sequential tunneling current in superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04443-5].

A static polarization imaging spectrometer based on a Savart polariscope

This paper describes the design of an interference imaging spectrometer. A static Polarization Imaging Spectrometer (PIS) based on a single Savart polariscope has been developed. It produces the interferogram and target's image in the spatial domain which are recorded by using a two-dimensional (2D) CCD detector. Imaging lens localizes the interference fringes and target's image coincident with the plane of detector, thereby facilitating an extremely compact design. The spectrum of the input light is reconstructed through the Fourier-transform of the interferogram. The total optics is as small as 20 x 6 cm phi in size and the spectral resolution of the prototype system is 97.66 cm(-1) between 25,000 and 10, 000 cm(-1). The polarization interference imaging device has advantages of ultra-compact size, wide field of view, high throughput and without any moving parts. (C) 2002 Published by Elsevier Science B.V.

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved.

Energy-level shifts of a stationary hydrogen atom in a static external gravitational field with Schwarzschild geometry

he first order perturbations of the energy levels of a stationary hydrogen atom in a static external gravitational field, with Schwarzschild metric, are investigated. The energy shifts are calculated for the relativistic 1S, 2S, 2P, 3S, 3P, 3D, 4S, 4P, 4D, and 4F levels. The results show that the energy-level shifts of the states with total angular momentum quantum number 1/2 are all zero, and the ratio of absolute energy shifts with total angular momentum quantum number 5/2 is 145. This feature can be used to help us to distinguish the gravitational effect from other effects.

SEU ground and flight data in static random access memories

This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data.

Application of static and dynamic enclosures for determining dimethyl sulfide and carbonyl sulfide exchange in Sphagnum peatlands: Implications for the magnitude and direction of flux

A static enclosure method was applied to determine the exchange of dimethyl sulfide (DMS) and carbonyl sulfide (OCS) between the surface of Sphagnum peatlands and the atmosphere. Measurements were performed concurrently with dynamic (flow through) enclosure measurements with sulfur-free air used as sweep gas. This latter technique has been used to acquire the majority of available data on the exchange of S gases between the atmosphere and the continental surfaces and has been criticized because it is thought to overestimate the true flux of gases by disrupting natural S gas gradients. DMS emission rates determined by both methods were not statistically different between 4 and >400 nmol m−2 h−1, indicating that previous data on emissions of at least DMS are probably valid. However, the increase in DMS in static enclosures was not linear, indicating the potential for a negative feedback of enclosure DMS concentrations on efflux. The dynamic enclosure method measured positive OCS flux rates (emission) at all sites, while data using static enclosures indicated that OCS was consumed from the atmosphere at these same sites at rates of 3.7 to 55 nmol m−2 h−1. Measurements using both enclosure techniques at a site devoid of vegetation showed that peat was a source of both DMS and OCS. However, the rate of OCS efflux from decomposing peat was more than counterbalanced by OCS consumption by vegetation, including Sphagnum mosses, and net OCS uptake occurred at all sites. We propose that all wetlands are net sinks for OCS.