Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice
| Data(s) |
2000
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| Resumo |
We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved. We have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped GaAs/AlAs superlattice. The observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. Both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (C) 2000 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:22导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:22Z (GMT). No. of bitstreams: 1 2945.pdf: 115729 bytes, checksum: 0b42355b2e01b2ff5fe309e80e61e2c5 (MD5) Previous issue date: 2000 Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci. Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China; Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Fonte |
Wang JN; Sun BQ; Wang XR; Wang YQ; Ge WK; Jiang DS; Wang HL .Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice .见：ELSEVIER SCIENCE BV .PHYSICA E, 8 (2),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2000,141-145 |
| Palavras-Chave | #半导体物理 #superlattices #GaAs/AlAs #electric field domains #tunnelling #OSCILLATIONS |
| Tipo |
会议论文 |
