Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) V-1 s(-1) were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Omega/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. (c) 2006 Elsevier B.V. All rights reserved.

SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques

A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 mum operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (C) 2002 American Institute of Physics.

Effects of growth interruption on self-assembled InAs/GaAs islands

The effect of growth interruption on the InAs deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurements. InAs material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of PL peak energy. On the other hand, the PL peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. In this case, the noncoherent islands capture InAs material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. The variations in the PL intensity and line width are also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

Compact polarization-insensitive arrayed waveguide grating based on SOI material

A compact polarization-insensitive 8x8 arrayed waveguide grating with 100GHz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (SOI). Increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. We choose the SOI wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. Compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. The index differences between TE0 and TM0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. The results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2).

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

HIRFL-CSR前端总线控制器的SD驱动

The HIRFL-CSR EVME bus controller, which runs Embedded Linux OS, is based on AT91RM9200 microprocessor, whose core is ARM920T. There are hardware interface electronic circuits connecting AT91RM9200 microprocessor and Security Digital Memory Card (SD Card). This article analyzes Operation System kernel and Linux device driver’s structure, designs SD Card driver based on Embedded Linux, which runs on AT91RM9200 microprocessor.中文文摘：简要论述了用于兰州重离子加速器冷却储存环(HIRFL-CSR)控制系统的前端总线控制器。该控制器是基于ARM920T核心的AT91RM9200处理器,运行嵌入式Linux操作系统。描述了AT91RM9200处理器与Security Digital MemoryCard(SD卡)的硬件接口电路,分析了操作系统内核和Linux驱动程序结构,设计和实现了嵌入式Linux下基于AT91RM9200处理器的SD卡驱动程序。

Improved electron injection in organic light-emitting devices with a lithium acetylacetonate [Li(acac)]/aluminium bilayer cathode

Lithium acetylacetonate [Li(acac)] covered with aluminium was used as an efficient electron injection layer in organic light-emitting devices (OLEDs) consisting of NPB as the hole transport layer and Alq(3) as the electron transport and light emitting layer, resulting in lower turn- on voltage and increased current efficiency. The turn- on voltage (the voltage at a luminance of 1 cd m(-2)) was decreased from 5.5 V for the LiF/Al and 4.4 V for Ca/Al to 4.0 V for Li(acac)/Al, and the device current efficiency was enhanced from 4.71 and 5.2 to 7.0 cd A(-1). The performance tolerance to the layer thickness of Li(acac) is also better than that of the device with LiF. LiF can only be used when deposited as an ultra- thin layer because of its highly insulating nature, while the Li(acac) can be as thick as 5 nm without significantly affecting the EL performance. We suppose that the free lithium released from Li(acac) improves the electron injection when Li(acac) is covered with an Al cathode.

轨迹测量系统中特征点检测技术研究

针对机器人直线轨迹测量系统中的图像处理鲁棒性问题,开展线结构光光条图像的特征点识别技术研究,提出了一种基于种子点拟合和直线生长的直线分割方法,很好地解决了各种条件下各段拟合直线的端点自动获取问题,提高了系统的环境适应性和测量精度.实验表明,该方法具有很好的鲁棒性.

一种基于遗传线性搜索算法的关节手模型匹配方法

提出了一种可替代传统搜索算法的改进型模型匹配算法 这种算法将遗传算法 (GeneticAlgorithm ,GA)和经典的线性搜索算法 (LineSearch ingAlgorithm ,LSA)相结合 它能保证匹配解是全局最优的并且运算是近乎实时的

水下机器人锁紧释放技术综述

叙述了锁紧释放系统在水下机器人上的应用,说明了锁紧释放装置是控制水下机器人作业的重要手段。分析了天津大学研制的水下机器人解锁释放搭载体和设备、半埋雷打捞装置夹紧爪和美国某型号武器水下发射装置完成预定任务的工作原理和结构特点。归纳总结了水下大型构件锁紧释放系统设计中应着重考虑的问题。讨论了动力源形式的选择和力(矩)裕度分析、支撑与紧固点的选择、锁紧与释放形式的选择和实现、密封技术等四项锁紧释放机构的关键技术。

苏里格气田苏6加密井区山1-盒8层段河流沉积体系分析

Sulige gas field is located in Northwest of Yi-Shan Slope of the Ordos Basin. The Shan 1 Member of the Shanxi Formation and He8 Member of the ShiHeZi Formation are not only objective strata of research but also main producing strata of the Sulige Field. From core and wireline log data of 32 wells in well Su6 area of Sulige field, no less than six lithofaice types can be recognised. They are Gm,Sl,Sh,Sm,Sp,Fl,Fm. Box-shaped, bell-shaped, funnel-shaped and line-segment-shaped log are typcial gamma-ray log characters and shapes. The Depositonal system of the Shan1-He8 strata in research area have five bounding-surface hierarchies and was composed of six architectural elements, CH, LS,FF（CH）,SB,LA,GB. The depositional model of Shan 1 was the type of a sandy meandering river with natural levee, abandoned channels and crevasse splay. Channel depth of this model maybe 7-12 m and the fullest-bank flow can reach 14 m high. Based on analysis of depositional causes, a sandy braided river model for the depositional system of He 8 can be erected. It consists of active main channels, active chute channels, sheet-like sand bars, abandoned main channels and abandoned chute channels. Channel depth of this model can be 3-4 m with 9 m of highest flow. Six gamma-ray log cross sections show that the connectivity of sandbodies through Shan 1 Member is lower than He 8. Influenced by occurrence of mudy and silty deposits, vertical connectivity of sandbodies through He 8 is not high.

火成岩储层裂缝识别、预测理论与方法研究－以济阳坳陷火成岩油藏为例

Since 1970s, igneous reservoirs such as Shang741, Bin674 and Luol51 have been found in Jiyang depression, which are enrichment and heavy-producing. Showing good prospect of exploration and development, igneous reservoirs have been the main part of increasing reserves and production in Shengli oilfield. As fracture igneous reservoir being an extraordinary complex concealed reservoir and showing heavy heterogeneity in spatial distribution, the study of recognition, prediction, formation mechanism and the law of distribution of fracture is essential to develop the reservoir. Guided by multiple discipline theory such as sedimentology, geophysics, mineralogy, petroleum geology, structural geology and reservoir engineering, a set of theories and methods of recognition and prediction of fractured igneous rock reservoir are formed in this paper. Rock data, three-dimensional seismic data, log data, borehole log data, testing data and production data are combined in these methods by the means of computer. Based on the research of igneous rock petrography and reservoir formation mechanism, emphasized on the assessment and forecast of igneous rock reservoir, aimed at establishing a nonhomogeneity quantification model of fractured igneous rock reservoir, the creativity on the fracture recognition, prediction and formation mechanism are achieved. The research result is applied to Jiyang depression, suggestion of exploration and development for fractured igneous rock reservoir is supplied and some great achievement and favourable economic effect are achieved. The main achievements are gained as follows: 1. The main facies models of igneous rock reservoir in JiYang depression are summarized. Based on data and techniques of seism, well log and logging,started from the research of single well rock facies, proceeded by seismic and log facies research, from point to line and line to face, the regional igneous facies models are established. And hypabyssal intrusion allgovite facies model, explosion volcaniclastic rock facies model and overfall basaltic rocks facies model are the main facies models of igneous rock reservoir in JiYang depression. 2. Four nonhomogenous reservoir models of igneous reservoirs are established, which is the base of fracture prediction and recognition. According to characteristics of igneous petrology and spatial types of reservoir, igneous reservoirs of Jiyang depression are divided into four categories: fractured irruptive rock reservoir, fracture-pore thermocontact metamorphic rock and irruptive rock compound reservoir, pore volcanic debris cone reservoir and fracture-pore overfall basaltic rock reservoir. The spatial distribution of each model's reservoir has its features. And reservoirs can be divided into primary ones and secondary ones, whose mechanism of formation and laws of distribution are studied in this paper. 3. Eight geologic factors which dominate igneous reservoirs are presented. The eight geologic factors which dominates igneous reservoirs are igneous facies, epigenetic tectonics deformation, fracture motion, intensity of intrusive effect and adjoining-rock characters, thermo-contact metamorphic rock facies, specific volcano-tectonic position, magmatic cyclicity and epigenetic diagenetic evolution. The interaction of the eight factors forms the four types nonhomogenous reservoir models of igneous reservoirs in Jiyang depression. And igneous facies and fracture motion are the most important and primary factors. 4. Identification patterns of seismic, well log and logging facies of igneous rocks are established. Igneous rocks of Jiyang depression show typical reflecting features on seismic profile. Tabular reflection seismic facies, arc reflection seismic facies and hummocky or mushroom reflection seismic facies are the three main facies. Logging response features of basic basalt and diabase are shown as typical "three low and two high", which means low natural gamma value, low interval transit-time, low neutron porosity, high resistivity and high density. Volcaniclastic rocks show "two high and three low"-high neutron porosity, high interval transit-time, low density, low-resistance and low natural gamma value. Thermo-contact metamorphic rocks surrounding to diabase show "four high and two low" on log data, which is high natural gamma value, high self-potential anomaly, high neutron porosity, high interval transit-time and low density and low-resistance. Based on seismic, well log and logging data, spatial shape of Shang 741 igneous rock is described. 5. The methods of fracture prediction and recognition for fractured igneous reservoir are summarized. Adopting FMI image log and nuclear magnetic resonance log to quantitative analysis of fractured igneous reservoir and according to formation mechanism and shape of fracture, various fractures are recognized, such as high-angle fracture, low-angle fracture, vertical fracture, reticulated fracture, induced fracture, infilling fracture and corrosion vug. Shang 741 intrusive rock reservoir can be divided into pore-vug compound type, pore fracture type, micro-pore and micro-fracture type. Physical properties parameters of the reservoir are computed and single-well fracture model and reservoir parameters model are established. 6. Various comprehensive methods of fracture prediction and recognition for fractured igneous reservoir are put forward. Adopting three-element (igneous facies, fracture motion and rock bending) geologic comprehensive reservoir evaluation technique and deep-shallow unconventional laterolog constrained inversion technique, lateral prediction of fractured reservoir such as Shang 741 is taken and nonhomogeneity quantification models of reservoirs are established.

On-line observation of interlaminar damage by ultrasonic inspection

This paper explores an on-line experimental method to highlight the process of internal damage development in composites by taking advantage of ultrasonic inspection. A loading device, which can work together with an ultrasonic inspection system, was designed, and the interlaminar shear damage of a double-sided grooved specimen of composite was examined on-line with the system. A full view of the progressive internal interlaminar damage, seen only with difficulty by common inspection methods, was successfully achieved.