Compact polarization-insensitive arrayed waveguide grating based on SOI material
| Data(s) |
2005
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| Resumo |
A compact polarization-insensitive 8x8 arrayed waveguide grating with 100GHz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (SOI). Increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. We choose the SOI wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. Compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. The index differences between TE0 and TM0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. The results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2). A compact polarization-insensitive 8x8 arrayed waveguide grating with 100GHz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (SOI). Increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. We choose the SOI wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. Compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. The index differences between TE0 and TM0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. The results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2). zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:31Z (GMT). No. of bitstreams: 1 2422.pdf: 402356 bytes, checksum: 897f9cb4316ea3e3c2926e6b7c04f372 (MD5) Previous issue date: 2005 SPIE.; Chinese Opt Soc. Chinese Acad Sci, Inst Semicond, Opt Elect Res & Dev Ctr, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Fang, Q; Li, F; Liu, YL .Compact polarization-insensitive arrayed waveguide grating based on SOI material .见：SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,PTS 1 AND 2 5644: 769-776 Part 1-2 |
| Palavras-Chave | #光电子学 #arrayed waveguide grating #compact #polarization-insensitive #silicon on insulator #SILICON-ON-INSULATOR #WAVELENGTH DEMULTIPLEXER #MULTIPLEXER #INP #SI |
| Tipo |
会议论文 |
