A study of electrical chloride extraction of iron artifacts

The chloride extraction rule of iron artifacts was studied by electrical methods. The effect of the current and potential value on the desalination result of simulated iron artifacts was studied through the galvanostatic and potentiostatic experiments the ingredients of the rust before and after treatments were also analyzed by the X-ray diffraction (XRD). It has been found that the optimal current density was between -0.50 and -0.75 mA/cm(2) and the optimal potential was between -1.175 and -1.200 V. The phase of the samples rusts transformed after treatment, as well as the anti-corrosion performance improved.

NUMERICAL STUDY OF DAMMANN ARRAY ILLUMINATORS

The numerical solutions of binary-phase (0, tau) gratings for one-dimensional array illuminators up to 32 are presented. Some fabrication errors, which are due to position-quantization errors, phase errors, dilation (or erosion) errors, and the side-slope error, are calculated and show that even-number array illuminators are superior to odd-number array illuminators when these fabrication errors are considered. One (0, tau) binary-phase, 8 x 16 array illuminator made with the wet-chemical-etching method is given in this paper.

蛇纹石质古玉器的无损分析研究

蛇纹石玉是我国利用最早的玉石之一。采用外束质子激发x射线荧光（PIXE）、x射线衍射（XRD）和拉曼光谱（Raman）技术对我国出土的古玉器以及辽宁省岫岩县出产的蛇纹石玉石进行矿物特征分析。通过对古玉器和玉石的对比研究，成功地对古玉器中的蛇纹石质玉器进行了无损鉴定，总结得出了蛇纹石质古玉器的无损鉴别方法，对于深化我国古玉器的研究具有重要意义。微量元素特征分析有助于探索古玉器玉料的来源。

河南南阳独山玉的岩相结构和无损分析(英文)

河南南阳独山玉的开采历史可以追溯到新石器时代,在我国玉文化中占有重要地位。鉴于当前对独山玉进行无损鉴别的方法较少,利用质子激发X荧光技术(proton induced X-ray emission,PIXE)、X射线衍射(X-ray diffraction,XRD)、激光Raman光谱(laser Raman spectroscopy,LRS)和扫描电子显微镜(scanning electron microscope,SEM)等技术对河南南阳独山玉料进行岩石矿物学分析。结果表明:独山玉主要由钙长石矿物构成,晶粒细小且结合紧密的显微结构与独山玉具有极高的稳定性有较大关系。PIXE,XRD和Raman技术作为无损分析方法为鉴定独山玉提供了准确有效的方法,为研究贵重的古玉样品提供了技术支持。

Phantom mutation hotspots in human mitochondrial DNA

Phantom mutations are systematic artifacts generated in the course of the sequencing process. Contra common belief these artificial mutations are nearly ubiquitous in sequencing results, albeit at frequencies that may vary dramatically. The amount of artifacts depends not only on the sort of automated sequencer and sequencing chemistry employed, but also on other lab-specific factors. An experimental study executed on four samples under various combinations of sequencing conditions revealed a number of phantom mutations occurring at the same sites of mitochondrial DNA (mtDNA) repeatedly. To confirm these and identify further hotspots for artifacts, > 5000 mtDNA electropherograms were screened for artificial patterns. Further, > 30000 published hypervariable segment 1 sequences were compared at potential hotspots for phantom mutations, especially for variation at positions 16085 and 16197. Resequencing of several samples confirmed the artificial nature of these and other polymorphisms in the original publications. Single-strand sequencing, as typically executed in medical and anthropological studies, is thus highly vulnerable to this kind of artifacts. In particular, phantom mutation hotspots could easily lead to misidentification of somatic mutations and to misinterpretations in all kinds of clinical mtDNA studies.

Properties of the proton-evoked currents and their modulation by Ca2+ and Zn2+ in the acutely dissociated hippocampus CA1 neurons

The characterization of acid-sensing ion channel (ASIC)-like currents has been reported in hippocampal neurons in primary culture. However, it is suggested that the profile of expression of ASICs changes in culture. In this study, we investigated the properties of proton-activated current and its modulation by extracellular Ca2+ and Zn2+ in neurons acutely dissociated from the rat hippocampal CA1 using conventional whole-cell patch-clamp recording. A rapidly decaying inward current and membrane depolarization was induced by exogenous application of acidic solution. The current was sensitive to the extracellular proton with a response threshold of pH 7.0-6.8 and the pH(50) Of 6.1, the reversal potential close to the Na+ equilibrium potential. It had a characteristic of acid-sensing ion channels (ASICs) as demonstrated by its sensitivity to amiloride (IC50 = 19.6 +/- 2.1 muM). Either low [Ca2+](0) or high [Zn2+](0) increased the amplitude of the current. All these characteristics are consistent with a current mediated through a mixture of homomeric ASIC1a and heteromeric ASIC1a + 2a channels and closely replicate many of the characteristics that have been previously reported for hippocampal neurons cultured for a week or more, indicating that culture artifacts do not necessarily flaw the properties of ASICs. Interestingly, we found that high [Zn2+] (>10(-4) M) slowed the decay time constant of the ASIC-like current significantly in both acutely dissociated and cultured hippocampal neurons. In addition, the facilitating effects of low [Ca2+](0) and high [Zn2+](0) on the ASIC-like current were not additive. Since tissue acidosis, extracellular Zn elevation and/or Ca2+ reduction occur concurrently under some physiological and/or pathological conditions, the present observations suggest that hippocampal ASICs may offer a novel pharmacological target for therapeutic invention. (C) 2004 Elsevier B.V. All rights reserved.

Magnetic quantum oscillations for the surface states of topological insulator Bi2Se3

We study quantum oscillations of the magnetization in Bi2Se3 (111) surface system in the presence of a perpendicular magnetic field. The combined spin-chiral Dirac cone and Landau quantization produce profound effects on the magnetization properties that are fundamentally different from those in the conventional semiconductor two-dimensional electron gas. In particular, we show that the oscillating center in the magnetization chooses to pick up positive or negative values depending on whether the zero-mode Landau level is occupied or empty. An intuitive analysis of these features is given and the subsequent effects on the magnetic susceptibility and Hall conductance are also discussed.

Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure

By integrating a resonant tunneling diode with a 1.2 mu m-thick slightly doped n-type GaAs layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (PVCR) as high as 36. A vast number of photo-excited holes generated in this 1.2 mu m-thick slightly doped n-type GaAs layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced PVCR.

Electron g factors and optical properties of InAs quantum ellipsoids

The electronic structure, electron g factors and optical properties of InAs quantum ellipsoids are investigated, in the framework of the eight-band effective-mass approximation. It is found that the light-hole states come down in comparison with the heavy-hole states when the spheres are elongated, and become the lowest states of the valence band. Circularly polarized emissions under circularly polarized excitations may have opposite polarization factors to the exciting light. For InAs ellipsoids the length, which is smaller than 35 nm, is still in a strongly quantum-confined regime. The electron g factors of InAs spheres decrease with increasing radius, and are nearly 2 when the radius is very small. The quantization of the electron states quenches the orbital angular momentum of the states. Actually, as some of the three dimensions increase, the electron g factors decrease. As more dimensions increase, the g factors decrease more. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension. The magnetic field along the z axis of the crystal structure causes linearly polarized emissions in the spheres, which emit unpolarized light in the absence of magnetic field.

Electron and hole transport through quantum dots

The transmission through quantum dots (QDs) is calculated using the recursion method. In our calculation, the effect of finite offset is taken into account. The results show that the shapes of the QDs determine the number of resonant tunneling peaks and the distances between the peaks decrease as the radii of the QDs increase. The intensities of the conductance are strongly dependent on the barrier widths. The conductance peaks are split when transmitting through two QDs. The theoretical results qualitatively agree with the available experimental data. Our calculated results should be useful for the application of QDs to photoelectric devices. (C) 2002 American Institute of Physics.

Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy

Self-assembled InAs nanostructures on (0 0 1) InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies and PL properties of InAs nanostructures depend strongly on the growth condition. For the same buffer layer, elongated InAs quantum wires (QWRs) and no isotropic InAs quantum dots (QDs) can be obtained using different growth conditions. At the same time, for InAs quantum dots, PL spectra also show several emission peaks related to different islands size. Theoretical calculation indicated that there are size quantization effects in InAs islands. (C) 2001 Elsevier Science B.V. All rights reserved.

Mechanisms for extra conductance plateaus in quantum wires

Spin-density-functional theory is employed to calculate the conductance G through a quasi-one-dimensional quantum wire. In addition to the usual subband quantization plateaus at G=n(2e(2)/h), we find additional structures at (n+1/2)(2e(2)/h). The extra structures appear whether or not the electrons in the wire spin polarize. However, only the spin-polarized case reproduces the experimental temperature and magnetic field dependences.

Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode

A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

A Compact Direct Digital Frequency Synthesizer for System-on-chip

A compact direct digital frequency synthesizer (DDFS) for system-on-chip (SoC) is developed in this paper. For smaller chip size and lower power consumption, the phase to sine mapping data is compressed by using sine symmetry technique, sine-phase difference technique, quad line approximation (QLA) technique and quantization and error read only memory (QE-ROM) technique. The ROM size is reduced by 98 % using the techniques mentioned above. A compact DDFS chip with 32-bit phase storage depth and a 10-bit on-chip digital to analog converter(DAC) has been successfully implemented using standard 0.35um CMOS process. The core area of the DDFS is 1.6mm(2). It consumes 167 mW at 3.3V, and its spurious free dynamic range (SFDR) is 61dB.