Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors


Autoria(s): Zhang WC (Zhang Wancheng); Nishiguchi K (Nishiguchi Katsuhiko); Ono Y (Ono Yukinori); Fujiwara A (Fujiwara Akira); Yamaguchi H (Yamaguchi Hiroshi); Inokawa H (Inokawa Hiroshi); Takahashi Y (Takahashi Yasuo); Wu, NJ (Wu, Nan-Jian)
Data(s)

2007

Resumo

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

Identificador

http://ir.semi.ac.cn/handle/172111/9426

http://www.irgrid.ac.cn/handle/1471x/64125

Idioma(s)

英语

Fonte

Zhang, WC (Zhang, Wancheng); Nishiguchi, K (Nishiguchi, Katsuhiko); Ono, Y (Ono, Yukinori); Fujiwara, A (Fujiwara, Akira); Yamaguchi, H (Yamaguchi, Hiroshi); Inokawa, H (Inokawa, Hiroshi); Takahashi, Y (Takahashi, Yasuo); Wu, NJ (Wu, Nan-Jian) .Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors ,IEICE TRANSACTIONS ON ELECTRONICS,MAY 2007,E90C (5):943-948

Palavras-Chave #半导体物理 #single-electron
Tipo

期刊论文