Two New Phenolic Glycosides from Viscum articulatum

Two new phenolic glycosides, 1-O-benzyl-[5-O-benzoyl-beta-D-apiofuranosyl (1. 2)]-beta-D-glucopyranoside (1), and 4'-hydroxy-7,3'-dimethoxyflavan-5-O-beta-D-glucopyranoside (2), together with nine known flavanones 3 -11, have been isolated from the dried

Dichotomains A and B: Two new highly oxygenated phenolic derivatives from Dicranopteris dichotoma

Dichotomains A (1) and B (2), two new highly oxygenated phenolic derivatives that feature a spirodilactone moiety in their structures, were isolated from the fronds of Dicranopteris dichotoma. Their structures were elucidated on the basis of NMR and MS sp

Flazinamide, a novel beta-carboline compound with anti-HIV actions

A beta-carboline compound, flazin isolated from Suillus granulatus has been shown weak anti-HIV-1 activity. Based on the structure of flazin, flazinamide [1-(5'-hydromethyl-2'-furyl)-beta-carboline-3-carboxamide] was synthesized and its anti-HIV activitie

Anti-HIV Activities of the Compounds Isolated from Polygonum cuspidatum and Polygonum multiflorum

The 70% EtOH extract of Polygonum cuspidatum showed inhibitory action against HIV-1-induced syncytium formation at non-cytotoxic concentrations in vitro with a 50% effective concentration (EC50) of 13.94 +/- 3.41 mu g/mL. Through bioactivity-guided fractionation, 20 phenolic compounds, including eight stilbenoids, were isolated from the roots of Polygonum cuspidatum, and their anti-HIV-1 activities were evaluated. Results showed that compounds 1, 13, 14, and 16 demonstrated fairly strong antiviral activity against HIV-1-induced cytopathic effects in C8166 lymphocytes at non-cytotoxic concentrations, with EC50 values of 4.37 +/- 1.96 mu g/mL, 19.97 +/- 5.09, 14.4 +/- 1.34 mu g/mL, and 11.29 +/- 6.26 mu g/mL and therapeutic index (TI) values of 8.12, > 10.02, > 13.89, and > 17.71, respectively. Other compounds showed either weak or no effects. Compound 6 also showed weak inhibition (153.42 +/- 19.25 mu g/mL); however, it possesses very good water solubility and showed almost no cytotoxicity (> 2000 mu g/mL), therefore achieving a fairly good TI (13.04). The activities of the two compounds (3 and 18) from Polygonum multiflorum were also assayed. The relationship between molecular structures and their bioactivities was also discussed.

Allelopathic effects of phenolic compounds present in submerged macrophytes on Microcystis aeruginosa

In laboratory studies, the allelopathic effects of 3 (Hydrocharitaceae family) submerged macrophytes (Elodea nuttallii (Planch) St. John, Hydrilla verticillata (L.f.) Royle and Vallisneria spiralis L.) were investigated on two strains of Microcystis aeruginosa. Both aqueous methanol extracts and exudates of three macrophytes inhibited the growth of both strains of Microcystis aeruginosa, After 3-days culture, E nuttallii, H. verticillata and V. spiralis excreted 0.8, 0.3 and 1.0% of total phenolic compounds (TPC), respectively, into the surrounding water. After removing phenolic compounds by polyvinylpolypyrrolidone (PVPP)), the plant exudates showed very weak activity. The inhibitory rates of exudates of E. nuttallii, H. verticillata and V. spiralis, against non-toxic M. aeruginosa were decreased by 35.7, 43.4 and 59.1% respectively. Thus 3 submerged macrophytes released the phenolic compounds into the surrounding water, to inhibit the growth of M. aeruginosa. This information may help us in understanding the mechanism of allelopathy in aquatic ecosystems and to control the algal bloom in eutrophic water bodies.

Temperature dependent spectral response characteristic of III-V compound tandem cell

The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum efficiency system at temperatures ranging from 25A degrees C to 160A degrees C. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap narrowing with temperature. The short-circuit current densities (J (sc)) of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm(2), respectively. The temperature coefficient of J (sc) for the tandem cell was determined to be 8.9 mu A/(cm(2) center dot A degrees C), and the corresponding temperature coefficient of the open-circuit voltage deduced from the series-connected model was -6.27 mV/A degrees C.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Amorphous silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 degreesC turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10(12) cm(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiOx and Si-in-SiNx thin films. Without altering the size or structure of the particles, a post-annealing at 300 degreesC for 2 min raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.

Point defects in III-V compound semiconductors

Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The formation energies of vacancies in compound semiconductors can be obtained by this calculation. A practical technique established on this model has been utilized for measuring the stoichiometry in GaAs. The relationship between stoichiometry and deep level centers in GaAs was also investigated.

Reliable concentrated photovoltaic system with compound concentrator

Concentrated photovoltaic systems (CPVSs) draw more and more attention because of high photovoltaic conversion efficiency, low consumption of solar cell, and low cost of power generation. However, the fallibility of the tracker in such systems has hindered their practical application for more than twenty years. The tracker is indispensable for a CPVS since only normal-incident sunlight can be focused on the solar cell chips, even a slight deviation of incident light will result in a significant loss of solar radiation, and hence a distinct decrease in electricity output. Generally, the more accurate the tracker is, the more reliable the system is. However, it is not exactly the case for a CPVS reliability, because the more accurate the tracker is, the better environment it demands. A CPVS is usually has to subjected to harsh environmental conditions, such as strong wind, heavy rain or snow, and huge changes of temperature, which leads to the invalidation of the system's high-accuracy tracker. Hence, the reliability of a CPVS cannot be improved only by enhancing the tracker's accuracy. In this paper, a novel compound concentrator, combination of Fresnel lens and photo-funnel, has been adopted in a prototype CPVS. Test results show that the compound concentrator can relax the angle tolerance from one tenth to five degrees of arc at 400 suns, which can help a CPVS endure serious environment and remain its reliability over long period. The CPVS with compound concentrator is attractive for commercial application.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Partial oxidation reforming of biomass fuel gas over nickel-based monolithic catalyst with naphthalene as model compound

With naphthalene as biomass tar model compound, partial oxidation reforming (with addition of O-2) and dry reforming of biomass fuel gas were investigated over nickel-based monoliths at the same conditions. The results showed that both processes had excellent performance in upgrading biomass raw fuel gas. Above 99% of naphthalene was converted into synthesis gases (H-2+CO). About 2.8 wt% of coke deposition was detected on the catalyst surface for dry reforming process at 750 degrees C during 108 h lifetime test. However, no Coke deposition was detected for partial oxidation reforming process, which indicated that addition of O-2 can effectively prohibit the coke formation. O-2 Can also increase the CH4 conversion and H-2/CO ratio of the producer gas. The average conversion of CH4 in dry and partial oxidation reforming process was 92% and 95%, respectively. The average H-2/CO ratio increased from 0.95 to 1.1 with the addition of O-2, which was suitable to be used as synthesis gas for dimethyl ether (DME) synthesis.