Thermo-optical switch matrix based on silicon-on-insulator waveguides

A thermo-optical waveguide switch matrix is designed and fabricated on silicon-on-insulator wafer. Multi-mode interferometers are used as power splitters and combiners in a Mach-Zehnder structure. Inductively coupled plasma reactive ion etching is used to fabricate the waveguides. The rise and fall times of the switch matrix are 13 mu s and 7 mu s, respectively. Switch cells have an average switching power consumption of 340 mW.

Optimization and characterization of the guest-host polyetherketone polymer films for application in integrated optical devices

In order to optimize the loading of 3-(1, 1-dicyanothenyl)-1-phenyl-4, 5-dihydro-1H-pryazole (DCNP) in polyetherketone (PEK-c) guest-host polymer films, ten kinds of DCNP/PEK-c thin films, in which the weight per cent of DCNP changes from 5 to 50, were prepared. Their second-order nonlinear optical coefficients chi(33)((2)) at 1064 nm were measured by Using Maker fringe method after poling under the optimal poling condition. Their optical waveguide transmission losses were measured at 632.8 nm. Optimal weight per cent of the chromophore for the DCNP/PEK-c guest-host polymer system has been determined as about 20 for use in the integrated optical devices.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector

Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

Polarization-Insensitive Silica on Silicon Arrayed Waveguide Grating Design

A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Stress analysis of silica-based arrayed waveguide grating by a finite element method

The stress distribution in silica optical waveguides on silicon is calculated by using finite element method (FEM). The waveguides are mainly subjected to compressive stress along the x direction and the z direction, and it is accumulated near the interfaces between the core and cladding layers. The shift of central wavelength of silica arrayed waveguide grating (AWG) on silicon-substrate with the designed wavelength and the polarization dependence are caused by the stress in the silica waveguides.

正弦变化的振幅型光瞳滤波器

光瞳滤波器作为实现超分辨的基本元件之一，它的设计以及制作都非常重要。设计了一种正弦变化的振幅型光瞳滤波器，可以通过调节少量的参量实现各种不同的超分辨模式。选择正弦函数的周期以及光瞳中心点透过率变化两个参量来实现对最终超分辨效果的调节。数值计算结果表明：在整个人射光瞳上的透过率瞳函数分布具有0．5～2个正弦振幅周期时，较为合适。小于0．5个周期将不会有任何超分辨效果，大于2个周期超分辨效果反而变差。数值计算中还注意到，当周期数为整数时，斯特雷尔比将保持0．25不变。对正弦变化振幅型光瞳滤波器的计算结果，显示

Analysis of a second-order polarization-independent filter made of a single ring resonator and a Sagnac interferometer

A novel second-order polarization-independent filter made of a single ring resonator and a Sagnac interferometer (SRRSI) is proposed, and its filtering characteristics are investigated. By using birefringence in waveguide, a single ring resonator can be used to synthesize a filter with second-order response. Analytical formulas are derived for characteristics of the SRRSI varied with waveguide parameters.. such as the coupling coefficient; and the critical condition of a second-order Butterworth filter is given. The influence of loss in the ring resonator is also analyzed. (c) 2005 Elsevier B.V. All rights reserved.

利用有机-无机溶胶-凝胶方法制备平面波导环形谐振腔

采用简单的有机一无机混合的溶胶一凝胶方法制备了折射率在一定范围内可调的波导材料，并利用其制备了平面波导环形谐振腔器件。波导结构呈现倒脊形，其制备工艺首先是利用感应耦合等离子体刻蚀技术（ICP）在二氧化硅衬底上刻蚀波导结构的凹槽，然后再沉积波导薄膜。利用光谱仪对器件的传输特性进行了测量，观测到具有10dB对比度，自由光谱范围0．182nm周期性谐振现象，结合环形谐振腔的传输特性，得到环形腔具有较低的传输损耗1．7dB／cm。同时对环形谐振腔的温度特性进行了测量，得出波导材料的热光系数为-1．54×10^-4

一种离子交换制备的玻璃光波导谐振腔滤波器

采用AgNO3、KNO3混和熔盐作为离子交换源，在K9玻璃上制备了跑道形谐振腔滤波器。测试得到该滤波器的自由光谱范围为0．178nm，两个输出端口的衬比度分别为1．47dB和6．5dB，分析得到耦合器的分束比和谐振腔的传输损耗分别为κ=0．16和α=8．1dB／cm。利用热光效应在16℃的温度变化范围内，滤波器实现了2π的相位调制，同时分析得到波导材料的热光系数约为1．28×10^-5／℃。

掺铒磷酸盐玻璃离子交换波导表面保护的研究

对离子交换波导制备过程中掺铒磷酸盐玻璃表面的侵蚀问题进行了研究，分析了产生侵蚀的原因，提出镀K9玻璃薄膜的方法，对掺铒磷酸盐玻璃表面进行保护．采用光学显微镜和原子力显微镜对波导表面特性进行了表征。同时对平板波导的光学特性进行了测试．研究表明K9玻璃薄膜不仅能够对掺铒磷酸盐玻璃起到保护作用，同时允许交换离子透过进入磷酸盐玻璃形成波导层．

K9玻璃薄膜对离子交换磷酸盐玻璃波导表面保护的优化研究

采用镀K9玻璃薄膜方法来解决离子交换掺铒磷酸盐玻璃波导表面的侵蚀问题,对K9玻璃薄膜的厚度进行了优化研究。测量分析了样品的荧光光谱和荧光寿命,采用光学显微镜和棱镜耦合技术对不同K9玻璃薄膜厚度下制备波导的表面形貌和导光特性进行了表征和测试。结果表明,与掺铒磷酸盐玻璃原材料相比,镀K9玻璃薄膜后荧光光谱保持不变,荧光寿命稍有下降(约0.2 ms);K9玻璃薄膜的厚度在60~80 nm的范围内保护效果最佳。为下一步制备掺铒有源玻璃光波导器件奠定了良好的实验基础。

Approximate analytical description for fundamental-mode fields of graded-index fibers: Beyond the Gaussian approximation

An approximate analytical description for fundamental-mode fields of graded-index fibers is explicitly presented by use of the power-series expansion method, the maximum-value condition at the fiber axis, the decay properties of fundamental-mode fields at large distance from the fiber axis, and the approximate modal parameters U obtained from the Gaussian approximation. This analytical description is much more accurate than the Gaussian approximation and at the same time keep the simplicity of the latter. As two special examples, we present the approximate analytical formulas for the fundamental-mode fields of a step profile fiber and a Gaussian profile fiber, and we find that they are both highly accurate in the single-mode range by comparing them with the corresponding exact solutions.

改善高功率激光二极管阵列光束质量的一种新方法

根据波导模理论,推导了高功率激光二极管阵列的远场分布,根据其分布特点,设计了一种离轴外腔.运用这种外腔,在工作电流为17A时,光束的束宽积从自由运转时的1100mm.mrad减小到128mm.mrad,二极管阵列的光束质量提高了8.5倍左右,输出功率约为自由运转时的75%.