SiO2 对Bi2O3-B2O3 玻璃体系光学、热学及结构的 影响

Glasses with compositions 50Bi2O3-xB2O3- (50-x)SiO2(x=0, 10, 20, 30, 40, 50) in mol% have been prepared by using a normal melt-quench technique. The effect of SiO2 addition on thermal stability, optical properties and structural characteristic on Bi2O3-B2O3 glass were systematically investigated by using XRD, DTA, ultraviolet-visible transmittance spectra, midinfrared transmittance spectra and Raman spectra. The experimental results demonstrate that, with the addition of SiO2, thermal stability of glass samples has been obviously improved. Once the amount of SiO2 is too much, the glass samples tend to be phase seperation which results in the decrease of thermal stability. With increasing SiO2 content, the UV cutoff edge firstly shifts to short-wave band and then shifts to long-wave band, and the transmittance of mid-infrared has been greatly improved. With substitution of SiO2 for B2O3, the [BO3] triangles and [BO4] tetrahedral groups are gradually replaced by [SiO4]. [BiO6] octahedral and [SiO4] tetrahedral units are connected forming a vibrational mode of Bi-O-Si. The physical chemistry and optical performance of Bi2O3-B2O3 glass were greatly improved by addition of SiO2.

Structural properties of ne implanted GaN

We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10(14) cm(-2) was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm(-1) for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.

Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

Nitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. The required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. This finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. (C) 2004 American Institute of Physics.

Formation mechanism of defects in annealed InP

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Hydrogen related defects in InP

Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed.

Theory of local mode excitation in polyatomics by frequency-modulated lasers

that the Stokes-interaction relation is reasonable qualitatively but not correct

Algebraic approach to stretching vibrational spectrum of H2S

The stretching vibrational spectra of H2S have been calculated by using the algebraic model, and the local mode characteristics have been analyzed. Within the vibrational quanta v=5, the standard deviation is 1.71 cm(-1), which is better than that from the local model HCAO model calculation.

Energy Dissipation In Fracture Of Bulk Metallic Glasses Via Inherent Competition Between Local Softening And Quasi-Cleavage

Compression, tension and high-velocity plate impact experiments were performed on a typical tough Zr41.2Ti13.8Cu10Ni12.5Be22.5 (Vit 1) bulk metallic glass (BMG) over a wide range of strain rates from similar to 10(-4) to 10(6) s(-1). Surprisingly, fine dimples and periodic corrugations on a nanoscale were also observed on dynamic mode I fracture surfaces of this tough Vit 1. Taking a broad overview of the fracture patterning of specimens, we proposed a criterion to assess whether the fracture of BMGs is essentially brittle or plastic. If the curvature radius of the crack tip is greater than the critical wavelength of meniscus instability [F. Spaepen, Acta Metall. 23 615 (1975); A.S. Argon and M. Salama, Mater. Sci. Eng. 23 219 (1976)], microscale vein patterns and nanoscale dimples appear on crack surfaces. However, in the opposite case, the local quasi-cleavage/separation through local atomic clusters with local softening in the background ahead of the crack tip dominates, producing nanoscale periodic corrugations. At the atomic cluster level, energy dissipation in fracture of BMGs is, therefore, determined by two competing elementary processes, viz. conventional shear transformation zones (STZs) and envisioned tension transformation zones (TTZs) ahead of the crack tip. Finally, the mechanism for the formation of nanoscale periodic corrugation is quantitatively discussed by applying the present energy dissipation mechanism.

The asymptotic near-tip solution for mode-iii crack in steady growth in power hardening media

Two local solutions, one perpendicular and one parallel to the direction of solar gravitational field, are discussed. The influence of gravity on the gas-dynamical process driven by the piston is discussed in terms of characteristic theory, and the flow field is given quantitatively. For a typical piston trajectory similar to the one for an eruptive prominence, the velocity of the shock front which locates ahead the transient front is nearly constant or slightly accelerated, and the width of the compressed flow region may be kept nearly constant or increased linearly, depending on the velocity distribution of the piston. Based on these results, the major features of the transient may be explained. Some of the fine structure of the transient is also shown, which may be compared in detail with observations.

Local thermal fixing of a photorefractive LiNbO3 hologram by use of a CO2 laser

A real-time, in situ fixing method by use of heating with a CO2 laser beam is suggested for thermal fixing of a small local hologram in the bulk of a Fe:LiNbO3 photorefractive crystal. For heating up to 100 degrees C-200 degrees C a volume with a shape similar to that of the laser beam a heat-guiding technique is developed. On the basis of the heat-transfer equations, different heating modes with or without metal absorbers for heat guiding-obtained by use of a continuous or pulsed laser beam are analyzed. The optimal mode may be pulsed heating with absorbers. On this basis experiments have been designed and demonstrated. It is seen that the fixing process with CO2 laser beam is short compared with the process by use of an oven, and the fixing efficiency is quite high. (C) 1998 Optical Society of America.

Pressure-induced Raman-active radial breathing mode transition in single-wall carbon nanotubes

Using classical constant-pressure molecular dynamics simulations and the force constants model, radial breathing mode (RBM) transition of single-wall carbon nanotubes under hydrostatic pressure is reported. With the pressure increased, the RBM shifts linearly toward higher frequency, and the RBM transition occurs at the same critical pressure as the structural transition. The group theory indicates that the RBMs are all Raman-active; however, due to the effect of the frequency transition and the electronic structure change for tube radial deformation, the Raman intensity of the modes becomes so weak as not to be experimentally detected, which is in agreement with a recent experiment by S. Lebedkin [Phys. Rev. B 73, 094109 (2006)]. Furthermore, the calculated RBM transition pressure is well fitted to the cube of diameter (similar to 1/d(3)).

Conditions for the local manipulation of all bipartite Gaussian states

We provide a general, necessary, and sufficient condition for the possibility of transforming a mixed bipartite Gaussian state with arbitrarily many modes to another one under arbitrary local Gaussian channels, which do not include classical communication. Moreover, by means of this condition we present a necessary criterion that can be used to check the possibility of a state transformation between two mixed Gaussian states. At the same time, we prove that our criterion can be reduced to the Eisert-Plenio criterion when the mode number is chosen as 1 per side.

Conditions for the local manipulation of tripartite Gaussian states

We present the normal form of the covariance matrix for three-mode tripartite Gaussian states. By means of this result, the general form of a necessary and sufficient criterion for the possibility of a state transformation from one tripartite entangled Gaussian state to another with three modes is found. Moreover, we show that the conditions presented include not only inequalities but equalities as well.