A TPR-family membrane protein gene is required for light-activated heterotrophic growth of the cyanobacterium Synechocystis sp PCC 6803

The unicellular cyanobacterium Synechocystis sp. PCC6803 can grow heterotrophically in complete darkness, given that a brief period of illumination is supplemented every day (light-activated heterotrophic growth, LAHG), or under very weak ( < 0.5 mumol m(-2) s(-1)) but continuous light. By random insertion of the genome with an antibiotic resistance cassette, mutants defective in LAHG were generated. In two identical mutants, sll0886, a tetratricopeptide repeat (TPR)-family membrane protein gene, was disrupted. Targeted insertion of sll0886 and three downstream genes showed that the phenotype was not due to a polar effect. The sll0886 mutant shows normal photoheterotrophic growth when the light intensity is at 2.5 mumol m(-2) s(-1) or above, but no growth at 0.5 mumol m(-2) s(-1). Homologs to sll0886 are also present in cyanobacteria that are not known of LAHG. sll0886 and homologs may be involved in controlling different physiological processes that respond to light of low fluence. (C) 2003 Federation of European Microbiological Societies. Published by Elsevier Science B.V. All rights reserved.

Ferromagnetic modification of GaN film by Cu+ ions implantation

The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON

Solid films containing phosphorus impurities were formed on p-type silicon wafer surface by traditional spin-on of commercially available dopants. The doping process is accomplished by irradiating the sample with a 308 nm XeCl pulsed excimer laser. Shallow junctions with a high concentration of doped impurities were obtained. The measured impurity profile was ''box-like'', and is very suitable for use in VLSI devices. The characteristics of the doping profile against laser fluence (energy density) and number of laser pulses were studied. From these results, it is found that the sheet resistance decreases with the laser fluence above a certain threshold, but it saturates as the energy density is further increased. The junction depth increases with the number of pulses and the laser energy density. The results suggest that this simple spin-on dopant pre-deposition technique can be used to obtain a well controlled doping profile similar to the technique using chemical vapor in pulsed laser doping process.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

Diamond growth by carbon ion implantation of diamond

Medium energy (5-25 keV) C-13(+) ion implantation into diamond (100) to a fluence ranging from 10(16) cm(-2) to 10(18) cm(-2) was performed for the study of diamond growth via the approach of ion beam implantation. The samples were characterized with Rutherford backscattering/channelling spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. Extended defects are formed in the cascade collision volume during bombardment at high temperatures. Carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 x 10(17) to 2 x 10(18) at. cm(-2) (with a dose rate of 5 x 10(15) at. cm(-2) s(-1) at 5 to 25 keV and 800 degrees C) showed no He-ion channelling. Common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. The rest of the grown layer is polycrystalline diamond with a very high density of extended defects.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

土壤微生物和酶对大气CO2浓度与温度升高的响应

土壤微生物(Soil microbes)是生态系统的重要组成部分，它参与土壤中复杂有机物质的分解和再合成，也参与C、N、S、P等的循环。土壤酶(Soil enzyme)是土壤中具有生物活性的蛋白质，它与微生物一起推动着土壤的生物化学过程，并在树木营养物质的转化中起着重要的作用。鉴于土壤微生物和土壤酶对环境变化的敏感性，它们在CO2浓度和温度升高时的反应将在很大程度上影响森林生态系统的结构和功能。因此，要全面评价大气CO2浓度和温度升高对整个生态系统的影响，有必要对CO2浓度和温度升高条件下的土壤微生物的反应进行深入的研究与探讨。本文应用自控、封闭、独立的生长室系统，研究了川西亚高山岷江冷杉（Abies faxoniana）根际、非根际土壤微生物数量，红桦（Betula albosinensis）根际微生物数量以及根际、非根际土壤酶活性对大气CO2浓度(环境CO2浓度+350±25μmol·mol-1，EC)和温度(环境温度+2.0±0.5℃，ET)升高及两者同时升高(ECT)的响应。结果表明： 1) EC和ET显著增加岷江冷杉根际微生物数量，但不同微生物种类对EC和ET的反应有所差异。6、8和10月，岷江冷杉根际微生物数量与对照(CK)相比，EC处理的根际细菌数量分别增加了35%、164%和312%，ET处理增加了30%、115%和209%；EC和ET处理对根际放线菌和根际真菌数量影响不显著。ECT处理的根际放线菌数量分别增加了49%、50%和96%，根际真菌数量增加了151%、57%和48%；而ECT对根际细菌数量影响不显著。EC、ET和ECT处理对岷江冷杉土壤微生物总数的根际效应明显，其R/S值分别为1.93、1.37和1.46(CK的R/S值为0.81)。 2) 红桦根际微生物数量对EC、ET和ECT的响应不同。生长季节(5~10月)，高密度的红桦根际细菌数量与CK 相比，EC的根际细菌数量分别增加28%、33%、423%、65%、43%和79%，而低密度的红桦根际细菌数量增加不显著。ET能显著增加根际细菌数量(7~10月)，其中高密度的根际细菌数量分别增加了377%、107%、35%、22%，而低密度的根际细菌数量分别增加了27%、27%、64%、48%；ECT对两个密度水平下根际细菌数量均未产生有显著的影响。高、低密度的红桦根际放线菌和根际真菌数量与 CK 相比，EC显著增加了低密度的红桦根际放线菌数量，而对高密度的根际放线菌数量无显著影响；ET和ECT对高低密度的红桦根际放线菌数量均未产生显著影响。EC和ET对高低密度的根际真菌数量也无显著影响，而ECT却显著增加了高低密度的根际真菌数量。 3) EC、ET和ECT处理的低密度红桦根际微生物(细菌、放线菌和真菌)数量没有显著高于或低于高密度根际微生物数量，表明短期内密度对红桦根际微生物数量不产生影响。 4) 不同种类的氧化还原酶对EC、ET和ECT的响应不同。5~10月，EC的红桦根际过氧化氢酶活性是CK 的1.44、1.06、1.11、1.10、1.12和1.24倍，差异显著(6月除外)；ET和ECT处理根际过氧化氢酶活性无显著增加。EC的红桦根际多酚氧化酶活性比CK显著增加；ET的根际多酚氧化酶活性显著高于CK(8月除外)。ECT的根际多酚氧化酶活性高于CK，差异不显著。EC的根际脱氢酶活性分别增加了46%、40%、133%、48%、17%和26%，差异显著。5~7月，ET和ECT的根际脱氢酶活性高于CK的脱氢酶活性，而8~9月则相反，差异性均不显著。 5) EC、ET和ECT对不同种类的水解酶的影响不同。EC能显著增加红桦根际脲酶活性，5~10月分别增加了29%、42%，、70%、67%、59%和57%。ET和ECT 对根际脲酶活性未产生显著影响。EC显著提高根际转化酶活性，5、6和9月EC的根际转化酶活性分别比CK高51%、42%和40%。5和10月，ET的根际转化酶活性低于CK，而其余月份却高于CK，但均具有显著性差异。ECT的根际转化酶活性与CK的根际转化酶活性有显著性差异(9月除外)，5、6和7月的根际转化酶活性分别提高了94%、198%和67%。 6) 与CK相比，EC、ET和ECT的非根际土壤微生物数量以及非根际土壤酶活性均无显著提高。EC、ET和ECT的过氧化氢酶、脲酶的根际效应明显，而多酚氧化酶和脱氢酶根际效应不明显。EC和ECT的转化酶根际效应明显，而ET的转化酶根际效应不明显。 It is well known that atmospheric CO2 concentration and temperature are increasing as a consequence of human activities. In past decades, considerable efforts had been put into investigating the effects of climate change on processes of forest ecological system. In general, studies had been mainly focused on the effects of elevated atmospheric CO2 on plant physiology and development, litter quality, and soil microorganisms. Studies showed that there was variation in the responses of root development and below-ground processes to climate between different plant communities. Since the concentration of CO2 in soil was much higher (10~50 times) than in the atmosphere, increasing levels of atmospheric CO2 may not directly in fluence below ground processes. Betula albosinensis and Abies faxoniana, as the dominated tree species of subalpine dark coniferous forest in the western Sichuan province, which play an important role in the structure and function of this kind of forest ecosystem. In our study, effects of elevated atmospheric CO2 concentration (350±25μmol·mol-1), increased temperature (2.0±0.5℃) and both of the two on the number of rhizospheric microbe and rhizospheric enzyme activity were studied by the independent and enclosed-top chamber’ system under high-frigid conditions. Responses of rhizospheric bacteria, actinomycetes and fungi number of Betula albosinensis and Abies faxoniana under different densities(high density with 84 stems·m-2, low density with 28 stems·m-2 ), and rhizospheric enzyme activity of Betula albo-sinensis to elevated CO2 concentration and increased temperature were analyzed and discussed. The results are as the following, 1) In comparion with the control, the numbers of rhizospheric bacteria of Abies faxoniana were increased by 35%, 164% and 312% significantly in June, August and October respectively of EC, and were increased by 30%, 115% and 209% respectively of ET.However the effect of EC and ET on rhizospheric actinomycetes and fungi was not significant. The number of rhizospheric actinomycetes of ECT were increased significantly by 49%, 50% and 96% respectively, and the increment of rhizospheric fungi were 151%, 57% and 48% respectively .The effect of ECT on rhizospheric bacteria was not significant. Rhizospheric effect of soil microbe for all treatments was significant, with the R/S of 1.93, 1.27 and 1.46 for EC, ET and ECT, respectively. 2) Treatment EC improved the number of rhizospheric bacteria of Betula albosinensis under high density significantly in comparison with the control, over the growing season, the greatest increment of rhizospheric bacteria was from July. However, EC had no effect on the number of rhizospheric bacteria under low density. Except May and June, treatment ET improved the number of rhizospheric signifcantly. The effect of treatment ECT on the number of rhizospheric bacteria under different densities was not significant. Of treatment EC, the number of rhizospheric actinomycetes of Betula albosinensis under low density were increased significantly, however, treatment EC did not stimulate the number of rhizospheric actinomycetes under high density. Simultaneously, treatment ET and ECT did not stimulate the number of rhizospheric actinomycetes. Finally, in treatment ECT, the number of rhizospheric fungi under high density were increased significantly, however treatment EC and ET did not stimulate the number of rhizospheric fungi under different densities. 3) Of treatment EC, ET and ECT, the number of rhizospheric microbe of Betula albosinensis under low density were not more or fewer than that of microbe under hign density along the growing season, which showed that plant density had no effect on the nmber of microbe. 4) From May to October, 2004，rhizospheric catalase activity of Betula albosinensis of treatment EC was 1.44, 1.06, 1.11, 1.10, 1.12 and 1.24 times as treatment CK respectively, and the difference was statistically significant(except June). Treatment ET and ECT did not increase rhizospheric catalase activity significantly. In treatment EC, the rhizospheric pohyphenol oxidase activity was higher than treatment CK significantly. The rhizospheric pohyphenol oxidase activity of treatment ET was higher than CK significantly (except August). The rhizospheric pohyphenol oxidase activity of treatment ECT was higher than CK, but the difference was not statistically significant. Over the growing period, the rhizospheric dehydrogenase activity were increased 46%, 40%, 133%, 48%, 17% and 26% respectively by treatment EC, and the difference was statistically significant. From May to July, the rhizospheric dehydrogenase activity in treatment ET and ECT was higher than CK, but from August to October, the rhizospheric dehydrogenase activity was lower than CK, the difference was not significant. 5) Treatment EC increased rhizospheric urease activity significantly, from May to October, rhizospheric urease activity were increased 29%, 42%, 70%, 67%, 59% and 57% respectively by EC. Treatment ET and ECT had no effect on rhizospheric urease activity. Treatment EC improved rhizospheric invertase activity significantly, in May, June and September, the rhizospheric invertase activity of treatment EC were increased 51%, 42% and 40% in comparison with the control. Except May and October, the rhizospheric invertase activity of treatment ET was markly higher than CK. The rhizospheric invertase activity of treatment ECT was significantly different from CK (except September), in May, June and July treatment ECT increased rhizospheric invertase activity by 94%, 198% and 67% respectively. 6) In comparison with the control, treatment EC, ET, and ECT had no effect on the number of non-rhizospheric microbe and non-rhizospheric enzyme activity. Rhizospheric effect of catalase and urease for all treatments was significant, but rhizospheric effect of pohyphenol oxidase and dehydrogenase was not significant. Rhizospheric effect of invertase of EC and ECT was significant, but rhizospheric effect of invertase of ET was not significant.

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.