In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure

An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

Improved field emission properties from metal-coated diamond films

Diamond films were prepared by microwave plasma chemical vapor deposition (MWPCVD). In order to obtain better field emission properties, the samples coated with different metals were prepared. The results showed that the field emission properties of diamond coated with metals could be greatly improved in comparison to pure diamond film and the different kinds of coated metals have different influences on the field emission properties. The possible reasons of effects on the field emission properties are discussed, which were probably due to the reduced effective surface work function by metal coatings; but the detail of the mechanism should be studied further. The surface morphology and microstructure of the sample were characterized by Atomic Force Microscope (AFM), X-ray photoelectron spectroscopy (XPS), X-ray Diffraction (XRD) and Raman spectrum tests. (c) 2006 Elsevier B.V. All rights reserved.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

Magnetic frustration induced quantum phase transitions in the S=1/2 vertically asymmetric diamond chain

This work was supported by the National Basic Research Program of China (973 Program) grant No. G2009CB929300 and the National Natural Science Foundation of China under Grant Nos. 60521001 and 60776061.

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

Diamond growth by carbon ion implantation of diamond

Medium energy (5-25 keV) C-13(+) ion implantation into diamond (100) to a fluence ranging from 10(16) cm(-2) to 10(18) cm(-2) was performed for the study of diamond growth via the approach of ion beam implantation. The samples were characterized with Rutherford backscattering/channelling spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. Extended defects are formed in the cascade collision volume during bombardment at high temperatures. Carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 x 10(17) to 2 x 10(18) at. cm(-2) (with a dose rate of 5 x 10(15) at. cm(-2) s(-1) at 5 to 25 keV and 800 degrees C) showed no He-ion channelling. Common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. The rest of the grown layer is polycrystalline diamond with a very high density of extended defects.

Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays

Highly ordered TiO2/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO2/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 degrees C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3-10 mu m. Raman spectra show two strong peaks about 1332 cm (1) and 1598 cm (1), indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO2/Ti has excellent field emission properties, a low turn-on field about 3.0 V/mu m, no evident decay at 3.4 mA/cm(2) in 480 min. (C) 2009 Elsevier B. V. All rights reserved.

Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate

An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.

柔性加工中高功率激光束空间变换研究

在国民经济中占有重要地位的汽车工业中，对于大型覆盖件模具的表面强化处理，最常见的是火焰淬火。火焰淬火对操作人员的要求高，可控性差，效果不理想，但是由于一直没有适合的方法，目前也只能继续使用。而激光表面强化技术结合柔性加工系统正是解决这类问题的新途径。传统的激光表面强化是采用把激光束离焦后进行扫描的方式，这种方法不能充分利用激光功率密度，而且往往要用转镜或振镜形成条形光斑来加快处理速度，这就需要复杂的机械结构，而且产生难以避免的重叠回火。我们提出一种新方法，利用二元光学元件来获得一种新型的周期光强分布，实现其在高功率激光系统中的应用，并设计成为集成到柔性加工系统中的组成部分，能够完成对大、中型模具表面的激光强化处理。本论文的工作主要是有关激光柔性加工系统中的光束传输及变换子系统，不仅包括理论设计、加工制作，同时还包括把该子系统有效的结合到整个系统中。本研究工作广泛涉及激光理论，光束变换和光纤传输，系统中的模块化集成应用技术，金属材料的特殊分布光强表面改性试验研究等等，是跨学科的交叉研究工作。在本论文中，重点是二元光学元件的设计方法的选择、计算机辅助设计的实现、二元光学元件的制作和在高功率激光传输中的应用，以及特殊光强分布应用于金属表面改性中的相关工作。通过把二元光学元件引入到高功率激光加工中，对出现的新现象给出一定的预测和分析，并获得了良好的强化结果，最终实现了系统的集成化，并具有实际生产所要求的可靠性和灵活性。本论文共分六章，主要包括两方面的内容。第一章为绪论，第六章为结论。第一方面内容在第二章到第四章中说明，是用于高功率激光应用中的二元光学元件的原理、设计和制作。第二方面的内容在第五章中，是关于应用前面设计制作的二元光学元件，在实际的金属材料表面处理中的实验研究，给出了相关试验结果。

集成激光制造系统加工过程计算机模拟

激光制造是一种有别于传统方式的先进制造系统.针对集成激光制造系统,在分析其结构组成及激光加工特点的基础上,得到了机器人运动学逆解表达式,提出了一种基于碰撞检测的三角网格简化算法,设计并建立了模拟系统的模块化结构.基于VC开发环境并使用OpenGL图形接口技术开发了集成化激光制造系统加工过程计算机模拟系统,为工艺规划和优化提供有效支持,并实现了系统的通用性、易维护性和可扩展性.

Analysis of beam-quality degradation in nonlinear frequency conversion

Based on the ripple transfers of electric-field amplitude and phase in frequency tripling, simple formulas are derived for the harmonic laser's beam-quality factor M-3omega(2), with an arbitrary fundamental incidence to ideal nonlinear crystals. Whereas the harmonic beam's quality is generally degraded, the beam's divergence is similar to that of the fundamental after nonlinear frequency conversion. For practical crystals with periodic surface ripples that are caused by their machining, a multiorder diffractive model is presented with which the focusing properties of harmonic beams can be studied. Predictions of the theories are shown to be in excellent agreement with full numerical simulations. (C) 2002 Optical Society of America.

ICF靶场中光束口径与列阵间隔的研究

从靶场反射镜架模块的机械结构设计布局所需几何空间的角度出发，根据大口径、列阵器件的特殊要求，给出符合“神光Ⅲ”装置总体技术要求的ICF靶场光束口径与列阵间隔之间的关系，得出靶场△纵、△横应满足的公式．

五自由度纳米级定位精度机构的研制

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用压电陶瓷作为驱动元件，柔性导向机构实现平移及转动功能。整个工作台可由整块金属材料通过线切割加工制成，实现一体化加工，而且结构紧凑。并给出导向机构刚度计算公式及设计实例。