Frequency bandwidth estimation of TO packaging techniques for laser modules

Two simple methods for estimating the potential modulation bandwidth of TO packaging technique are presented. The first method is based upon the comparison of the measured frequency responses of the laser diodes and the TO laser modules, and the second is from the equivalent circuit for the test fixture, the TO header, the submount and the bonding wire. It is shown that the TO packaging techniques used in the experiments can potentially achieve a frequency bandwidth of over 10.5 GHz, and the two proposed methods give similar results.

Methods for characterization of packaging parasitics of semiconductor lasers

Two novel methods for analyzing the parasitics of packaging networks are proposed based on the relations between the scattering parameters of a semiconductor laser before and after packaging, and the experiments are designed and performed using our methods. It is found that the analysis results of the two methods are in good agreement with the measurements. Either of the two methods can provide an alternative approach for characterizing the packaging parasitics for semiconductor lasers, and both are convenient due to the developed measurement techniques. (c) 2005 Wiley Periodicals, Inc.

Silicon bench for passive coupling and packaging of high-frequency optoelectronic devices

Coupling and packaging have become decisive factors in the final performance and cost of high-frequency optoelectronic devices. Here, we report the design and successful fabrication of a silicon bench that integrates a V-groove and high-frequency coplanar waveguide (CPW) on the same high-resistivity silicon wafer as an effective optoelectronic packaging solution.

Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules

Scattering parameters of photodiode chip, TO header and TO packaged module are measured, and the effects of TO packaging network on the high-frequency response of photodiode are investigated. Based on the analysis, the potential bandwidth of TO packaging techniques is estimated from the scattering parameters of the TO packaging network. Another method for estimating the potential bandwidth from the equivalent circuit for the TO packaged photodiode model is also presented. The results obtained using both methods show that the TO packaging techniques used in the experiments can potentially achieve a frequency bandwidth of 22 GHz.

Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices

The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition

A new alternative method to grow the relaxed Ge0.24Si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Angstrom Ge0.24Si0.76 layer was first grown on a Si(100) substrate. Then a 500-Angstrom Si layer and a subsequent 5000-Angstrom Ge0.24Si0.76 overlayer followed. All these three layers were grown at 600 degrees C. After being removed from the growth system to air, the sample was first annealed at 850 degrees C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Angstrom Ge0.24Si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Angstrom Ge0.24Si0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.

Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O

A novel microwave packaging technique for 10Gb/s electro-absorption modulator integrated with distributed feedback laser (EML) is presented. The packaging parasitics and intrinsic parasitics are both well considered, and the packaging circuit was synthetically designed to compensate for the intrinsic parasitic of the chip. A butterfly-packaged EMI module has been successfully developed to prove that. The small-signal modulation bandwidth of the butterfly-packaged module is about 10 GHz. Optical fiber transmission experiments have shown that the module can be used for 10Gb/s optical transmission system. After transmission through 40km,. the power penalty is less than 1 dBm at a bit-error-rate of 10-12.

Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices

During the packaging of optoelectrome device, a problem always met is the instability of output power. The main effect causing this problem, Fabry-Perot interference, is discussed in this paper. Both theoretical analysis and experimental test are carried out and in good agreement. As an example of avoiding the disadvantage of Fabry-Perot interference, the packaging process of Silicon-on-Insulator (SOI) based Variable Optical Attenuator(VOA) is shown at last.

Upgrading of liquid fuel from the vacuum pyrolysis of biomass over the Mo-Ni/gamma-Al2O3 catalysts

High amounts of acid compounds in bio-oil not only lead to the deleterious properties such as corrosiveness and high acidity, but also set up many obstacles to its wide applications. By hydrotreating the bio-oil under mild conditions, some carboxylic acid compounds could be converted to alcohols which would esterify with the unconverted acids in the bio-oil to produce esters. The properties of the bio-oil could be improved by this method. In the paper, the raw bio-oil was produced by vacuum pyrolysis of pine sawdust. The optimal production conditions were investigated. A series of nickel-based catalysts were prepared. Their catalytic activities were evaluated by upgrading of model compound (glacial acetic acid). Results showed that the reduced Mo-10Ni/gamma-Al2O3 catalyst had the highest activity with the acetic acid conversion of 33.2%. Upgrading of the raw bio-oil was investigated over reduced Mo-10Ni/gamma-Al2O3 catalyst. After the upgrading process, the pH value of the bio-oil increased from 2.16 to 2.84. The water content increased from 46.2 wt.% to 58.99 wt.%. The H element content in the bio-oil increased from 6.61 wt.% to 6.93 wt.%. The dynamic viscosity decreased a little. The results of GC-MS spectrometry analysis showed that the ester compounds in the upgraded bio-oil increased by 3 times. it is possible to improve the properties of bio-oil by hydrotreating and esterifying carboxyl group compounds in the bio-oil.

Vacuum pyrolysis of waste tires with basic additives

Granules of waste tires were pyrolyzed tinder vacuum (3.5-10 kPa) conditions, and the effects of temperature and basic additives (Na2CO3, NaOH) on the properties of pyrolysis were thoroughly investigated. It was obvious that with or without basic additives, pyrolysis oil yield increased gradually to a maximum and subsequently decreased with a temperature increase from 450 degrees C to 600 degrees C, irrespective of the addition of basic additives to the reactor. The addition of NaOH facilitated pyrolysis dramatically, as a maximal pyrolysis oil yield of about 48 wt% was achieved at 550 degrees C without the addition of basic additives, while a maximal pyrolysis oil yield of about 50 wt% was achieved at 480 degrees C by adding 3 wt% (w/w, powder/waste tire granules) of NaOH powder. The composition analysis of pyrolytic naphtha (i.b.p. (initial boiling point) similar to 205 degrees C) distilled from pyrolysis oil showed that more dl-limonene was obtained with basic additives and the maximal content of dl-limonene in pyrolysis oil was 12.39 wt% which is a valuable and widely-used fine chemical. However, no improvement in pyrolysis was observed with Na2CO3 addition. Pyrolysis gas was mainly composed of H-2, CO, CH4, CO2, C2H4 and C2H6. Pyrolytic char had a surface area comparable to commercial carbon black, but its proportion of ash (above 11.5 wt%) was much higher.