On the influence zone and the prediction of tensile strength of particulate polymeric composites

An intended numerical investigation is carried out. The results indicate that, even if a perfect adhesive bond is preserved between the particles and matrix materials, the two-phase element cell model is unable to predict the strength increment of the particulate polymeric composites (PPC). To explore the main reinforcing mechanism, additional microscopic experiment is performed. An ''influence zone'' was observed around each particle which is measured about 2 to 10 micrometers in thickness for a glass-polyethylene mixture. Then, an improved computational model is presented to include the ''influence zone'' effect and several mechanical behaviors of PPC are well simulated through this new model.

Tensile and compressive deformation of a short-glass-fiber-reinforced liquid-crystalline polymer

Results of tensile and compression tests on a short-glass-fiber-reinforced thermotropic liquid crystalline polymer are presented. The effect of strain rate on the compression stress-strain characteristics has been investigated over a wide range of strain rates epsilon between 10(-4) and 350 s-1. The low-strain-rate tests were conducted using a screw-driven universal tensile tester, while the high-strain-rate tests were carried out using the split Hopkinson pressure bar technique. The compression modulus was shown to vary with log10 (epsilon) in a bilinear manner. The compression modulus is insensitive to strain rate in the low-strain-rate regime (epsilon = 10(-4) - 10(-2) s-1), but it increases more rapidly with epsilon at higher epsilon. The compression strength changes linearly with log10 (epsilon) over the entire strain-rate range. The fracture surfaces were examined by scanning electron microscopy.

High-order asymptotic field of tensile plane-strain nonlinear crack problems

In this paper, the governing equations and the analytical method of the secondorder asymptotic field for the plane-straln crack problems of mode I have been presented. The numerical calculation has been carried out. The amplitude coefficients k2 of the second term of the asymptotic field have been determined after comparing the present results with some fine results of the finite element calculation. The variation of coefficients k2 with changes of specimen geometry and developments of plastic zone have been analysed. It is shown that the second term of the asymptotic field has significant influence on the near-crack-tip field. Therefore, we may reasonably argue that both the J-integral and the coefficient k2 can beeome two characterizing parameters for crack initiation.

Torsion fracture behavior of drawn pearlitic steel wires with different heat treatments

In this paper, torsion fracture behavior of drawn pearlitic steel wires with different heat treatments was investigated. Samples with different heat treatments was investigated. Samples with different heat treatment conditions were subjected to torsion and tensile tests. The shear strain along the torsion sample after fracture was measured. Fracture surface of wires was examined by Scanning Electron Microscopy. In addition, the method of Differential Scanning Calorimetry was used to characterize the thermodynamic process in the heat treatment. A numerical simulation via finite element method on temperature field evolution for the wire during heat treatment process was performed. The results show that both strain aging and recovery process occur in the material within the temperature range between room temperature and 435 degrees C. It was shown that the ductility measured by the number of twists drops at short heating times and recovers after further heating in the lead bath of 435 degrees C. On the other hand, the strenght of the wire increases at short heating times and decreases after further heating. The microstructure inhomogeneity due to short period of heat treatment, coupled with the gradient characteristics of shear deformation during torsion results in localized shear deformation of the wire. In this situation, shear cracks nucleate between lamella and the wire breaks with low number of twists.

Synthesis Of Plastic Zr-Based Bulk Metallic Glass Matrix Composites By The Copper-Mould Suction Casting And The Bridgman Solidification

Zr-based bulk metallic glass matrix composites with the composition of Zr56.2Ti13.8Nb5.0Cu6.9Ni5.6Be12.(5) were synthesized by the copper-mould suction casting and the Bridgman solidification. The composite, containing a well-developed flowery beta-Zr dendritic phase, was obtained by the Bridgman solidification with the withdrawal velocity of 0.8 mm/s and the temperature gradient of 45 K/mm, and the ultimate strength of 2050 MPa and fracture plastic strain of 14.6% of the composite were achieved, which was mainly interpreted by the homogeneous dispersion of bcc beta-Zr phase in the glass matrix. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

Tensile and compressive mechanical behavior of twinned silicon carbide nanowires

Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (I-D) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in room temperature (RT) PL spectra are observed for samples with a composition larger than 0.10. Temperature and excitation-power-dependent PL spectra have been measured for a sample with it P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). A theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and Ill states.

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

The hole subband structures and effective masses of tensile strained Si/Si1-yGey quantum wells are calculated by using the 6x6 k.p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm(-1).

Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

Considering tensile-strained p-type Si/Si1-yGey quantum wells grown on a relaxed Si1-xGex ( 0 0 1) virtual substrate ( y < x), the hole subband structure and the effective masses of the first bound hole state in the quantum wells are calculated by using the 6 x 6 k center dot p method. Designs for tensile-strained p-type quantum well infrared photodetectors ( QWIPs) based on the bound-to-quasi-bound transitions are discussed, which are expected to retain the ability of coupling normally incident infrared radiation without any grating couplers, have lower dark current than n-type QWIPs and also have a larger absorption coefficient and better transport characteristics than normal unstrained or compressive-strained p-type QWIPs.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.

Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells

A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs

A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLID can be up to 122nm, covering the range of 1508-1630nm, and the output power is 11.5mW.