Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells
Data(s) |
2004
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Resumo |
A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current. (C) 2004 Society of Photo-Optical Instrumentation Engineers. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang, SR; Zhu, HL; Wang, BJ; Liu, ZH; Ding, Y; Zhao, LJ; Zhou, F; Wang, W .Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells ,OPTICAL ENGINEERING,SEP 2004,43 (9):1955-1956 |
Palavras-Chave | #光电子学 #semiconductor optical amplifier |
Tipo |
期刊论文 |