41 resultados para Source analysis


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Surface, overlying, and interstitial waters were collected at monthly intervals at three experimental stations in a shallow Chinese eutrophic lake (Lake Donghu) to assess the occurrence, distribution, and status of UV-sensitive phosphorus compounds (UVSP) and phosphatase hydrolyzable phosphorus (PHP), coupled with kinetics of alkaline phosphatase activity (APA). Orthophosphate (o-P) concentrations were generally the highest at Station 1, where chlorophyll a (chl a) was a function of o-P at temporal scale. The V-max/K-m of APA obtained by Michaelis-Menten approach paralleled the chlorophyll data at two stations. These facts imply that the development of phytoplankton may be attributed to APA induced by PHP. The potentially available UVSP and PHP peaked in interstitial, overlying, and surface water simultaneously sometimes in 1995 to 1996 and 1997 to 1999. It is postulated that they may arise from the bottom. UVSP peaked in interstitial water at the 12-16 cm layers in sediment cores. Moreover, in interstitial water, UV irradiation resulted in an elevated o-P concentration and decreased APA in a timeseries analysis. Therefore, the mechanism that APA involved in the process of photorelease of o-P was not demonstrated. UVSP is most likely a functional group of labile phosphorus distinct from the enzymatic substrate in this shallow eutrophic lake.

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In this letter, the power spectrum of a cooled distributed feedback laser module is measured using the self-heterodyne technique. Periodical oscillation peaks have been observed in the measurement. Further investigation shows that the additional modulation signal is coupled from the thermal electric cooler (TEC) controller to the laser driver, and then applied to the laser diode. The additional modulation can be eliminated by properly isolating the laser driving source from the TEC controller.

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We develop a swept frequency method for measuring the frequency response of photodetectors; (PDs) based on harmonic analysis. In this technique, a lightwave from a laser source is modulated by a radio-frequency (RF) signal via a Mach-Zehnder LiNbO3 modulator, and detected by a PD under test. The measured second-order harmonic of the RF signal contains information of the frequency responses and nonlinearities of the RF source, modulator, and PD. The frequency response of the PD alone is obtained by deducting the known frequency responses and nonlinearities of the RF source and modulator. Compared with the conventional swept frequency method, the measurement frequency range can be doubled using the proposed method. Experiment results show a good agreement between the measured results and those obtained using other techniques.

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A new method of analyzing the chirp characteristics of directly modulated lasers and integrated laser-modulators is presented in this paper. Phase-circuit has been introduced into the circuit model of distributed feedback (DFB) lasers in the analysis. Therefore, the chirp characteristics of the device can be obtained by simulating the modified circuit model. The simulation results agree well with the published data. Furthermore, this modified model is combined with the circuit model of electroabsorption (EA) modulators to simulate the chirp characteristics of the monolithic integration of a DFB laser and an EA modulator. The simulation is focused on the dependence of the frequency chirp of the integrated device on the isolation resistance between laser and modulator. Much lower chirp can be seen in the integrated lightwave source compared to the directly modulated laser.

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In situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved.

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We have investigated the photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen radio frequency-plasma source. The PL data shows that the relative intensity of the donor-bound exciton (I-2) emission to the acceptor-bound exciton (I-1) emission strongly depends on both the excitation power and the temperature. This result is explained by a thermalization model of the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. Quantitative analysis with the proposed mechanism is in good agreement with the experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)09102-1].

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Raman scattering, photoluminescence (PL), and nuclear reaction analysis (MA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy, The Raman spectra showed the presence of the E-2 (high) mode of GaN and shift of this mode from 572 to 568 cm(-1) caused by annealing. The results showed that RTA has a significant effect on the strain relaxation caused by the lattice and thermal expansion misfit between the GaN epilayer and the substrate. The PL peak exhibited a blueshift in its energy position and a decrease in the full width at half maximum after annealing, indicating an improvement in the optical quality of the film. Furthermore, a green luminescence appeared after annealing and increased in intensity with increasing annealing time. This effect was attributed to H concentration variation in the GaN film, which was measured by NRA. A high H concentration exists in as-grown GaN, which can neutralize the deep level, and the H-bonded complex dissociates during RTA, This leads to the appearance of a luminescent peak in the PL spectrum. (C) 1998 American Institute of Physics.

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The measurement and analysis of the microwave frequency response of semiconductor optical amplifiers (SOAs) are proposed in this paper. The response is measured using a vector network analyzer. Then with the direct-subtracting method, which is based on the definition of scattering parameters of optoelectronic devices, the responses of both the optical signal source and the photodetector are eliminated, and the response of only the SOA is extracted. Some characteristics of the responses can be observed: the responses are quasi-highpass; the gain increases with the bias current; and the response becomes more gradient while the bias current is increasing. The multisectional model of an SOA is then used to analyze the response theoretically. By deducing from the carrier rate equation of one section under the steady state and the small-signal state, the expression of the frequency response is obtained. Then by iterating the expression, the response of the whole SOA is simulated. The simulated results are in good agreement with the measured on the three main characteristics, which are also explained by the deduced results. This proves the validity of the theoretical analysis.

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VSR4 links use graded index multimode fibers (GIMMFs) as the transmission medium with operation wavelength 850nm. For cost reasons, VCSEL has been selected as the optical source to VSR4. The minimum bandwidth specification for 62.5um GIMMF in VSR4 is only 400 MHz(.)km for over-filled-launch (OFL) condition. The distance of 300 meters is limited over transmission rates of 1.25Gbit/s on the basis of this specification. In order to overcome the OFL bandwidth limit by selective excitation of a limited number of modes, conditioned launch technique is investigated. In this paper, based on a comprehensive dispersion theory of GIMMF, a model is built to simulate the transmission of optical signal in GIMMFs and a comparison between OFL and conditioned launch is analyzed. The result can be the guidelines for the best choice of techniques for various LAN and interconnect systems also.

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Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

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The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

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An advanced superconducting ECR ion source named SECRAL has been constructed at Institute of Modern Physics of Chinese Academy of Sciences, whose superconducting magnet assembly consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamp. In order to investigate the structure of sextupole coils and to increase the structural reliabilities of the magnet system, global and local structural analysis have been performed in various operation scenarios. Winding pack and support structure design of magnet system, mechanical calculation and stress analysis are given in this paper. From the analysis results, it has been found that the magnet system is safe in the referential operation scenarios and the configuration of the magnet complies with design requirements of the SECRAL.

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In this paper, source apportionment techniques are employed to identify and quantify the major particle pollution source classes affecting a monitoring site in metropolitan Boston, MA. A Principal Component Analysis (PCA) of paniculate elemental data allows the estimation of mass contributions for five fine mass panicle source classes (soil, motor vehicle, coal related, oil and salt aerosols), and six coarse panicle source classes (soil, motor vehicle, refuse incineration, residual oil, salt and sulfate aerosols). Also derived are the elemental characteristics of those source aerosols and their contributions to the total recorded elemental concentrations (i.e. an elemental mass balance). These are estimated by applying a new approach to apportioning mass among various PCA source components: the calculation of Absolute Principal Component Scores, and the subsequent regression of daily mass and elemental concentrations on these scores.

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Over last two decades, numerous studies have used remotely sensed data from the Advanced Very High Resolution Radiometer (AVHRR) sensors to map land use and land cover at large spatial scales, but achieved only limited success. In this paper, we employed an approach that combines both AVHRR images and geophysical datasets (e.g. climate, elevation). Three geophysical datasets are used in this study: annual mean temperature, annual precipitation, and elevation. We first divide China into nine bio-climatic regions, using the long-term mean climate data. For each of nine regions, the three geophysical data layers are stacked together with AVHRR data and AVHRR-derived vegetation index (Normalized Difference Vegetation Index) data, and the resultant multi-source datasets were then analysed to generate land-cover maps for individual regions, using supervised classification algorithms. The nine land-cover maps for individual regions were assembled together for China. The existing land-cover dataset derived from Landsat Thematic Mapper (TM) images was used to assess the accuracy of the classification that is based on AVHRR and geophysical data. Accuracy of individual regions varies from 73% to 89%, with an overall accuracy of 81% for China. The results showed that the methodology used in this study is, in general, feasible for large-scale land-cover mapping in China.

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Rapid urbanization and industrialization in southern Jiangsu Province have consumed a huge amount of arable land. Through comparative analysis of land cover maps derived from TM images in 1990, 2000 and 2006, we identified the trend of arable land loss. It is found that most arable land is lost to urbanization and rural settlements development. Urban settlements, rural settlements, and industrial park-mine-transport land increased, respectively, by 87 997 ha (174.65%), 81 041 ha (104.52%), and 12 692 ha (397.99%) from 1990 to 2006. Most of the source (e.g., change from) land covers are rice paddy fields and dryland. These two covers contributed to newly urbanized areas by 37.12% and 73.52% during 1990-2000, and 46.39% and 38.86% during 2000-2006. However, the loss of arable land is weakly correlated with ecological service value, per capita net income of farmers, but positively with grain yield for some counties. Most areas in the study site have a low arable land depletion rate and a high potential for sustainable development. More attention should be directed at those counties that have a high depletion rate but a low potential for sustainable development. Rural settlements should be controlled and rationalized through legislative measures to achieve harmonious development between urban and rural areas, and sustainable development for rural areas with a minimal impact on the ecoenvironment. (C) 2009 Elsevier Ltd. All rights reserved.