Different colloids self-assembly in micromolding

Micromolding in capillaries (MIMIC) and non-conformal contact micromolding (NCCM) were employed to pattern the silica microspheres by the use of capillary forces. Three types of silica microspheres aggregations, small dot, ring and grid patterns, from the same prepatterned poly(dimethylsiloxane) (PDMS) stamps, were created by tuning the contact mode between the PDMS mold and the substrate and the concentration of silica microspheres suspension during the micromolding. The formation mechanisms of different patterns were discussed.

Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Electron self-injection and acceleration driven by a tightly focused intense laser beam in an underdense plasma

A scheme for electron self-injection in the laser wakefield acceleration is proposed. In this scheme, the transverse wave breaking of the wakefield and the tightly focused geometry of the laser beam play important roles. A large number of the background electrons are self-injected into the acceleration phase of the wakefield during the defocusing of the tightly focused laser beam as it propagates through an underdense plasma. Particle-in-cell simulations performed using a 2D3V code have shown generation of a collimated electron bunch with a total number of 1.4 x 109 and energies up to 8 MeV. (C) 2005 American Institute of Physics.

Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots

We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008

Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density

We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.

Nonlinear X-wave formation and conical emission at different powers of a femtosecond laser pulse in water

Nonlinear X-wave formation at different pulse powers in water is simulated using the standard model of nonlinear Schrodinger equation (NLSE). It is shown that in near field X-shape originally emerges from the interplay between radial diffraction and optical Kerr effect. At relatively low power group-velocity dispersion (GVD) arrests the collapse and leads to pulse splitting on axis. With high enough power, multi-photon ionization (NIPI) and multi-photon absorption (MPA) play great importance in arresting the collapse. The tailing part of pulse is first defocused by MPI and then refocuses. Pulse splitting on axis is a manifestation of this process. Double X-wave forms when the split sub-pulses are self-focusing. In the far field, the character of the central X structure of conical emission (CE) is directly related to the single or double X-shape in the near field. (c) 2007 Elsevier B.V. All rights reserved.

Compensation for self-focusing by use of cascade quadratic nonlinearity

We demonstrate theoretically and experimentally compensation for positive Kerr phase shifts with negative phases generated by cascade quadratic processes. Experiments show correction of small-scale self-focusing and whole-beam self-focusing in the spatial domain and self-phase modulation in the temporal domain. (C) 2001 Optical Society of America.

Effects of unconditioned and conditioned aversive stimuli in an intense fear conditioning paradigm on synaptic plasticity in the hippocampal CA1 area in vivo

Repeated vivid recalls or flashbacks of traumatic memories and memory deficits are the cardinal features of post-traumatic stress disorder (PTSD). The underlying mechanisms are not fully understood yet. Here, we examined the effects of very strong fear conditioning (20 pairings of a light with a 1.5-mA, 0.5-s foot shock) and subsequent reexposure to the conditioning context (chamber A), a similar context (chamber B), and/or to the fear conditioned stimulus (CS) (a light) on synaptic plasticity in the hippocampal CA1 area in anesthetized Sprague-Dawley rats. The conditioning procedure resulted in very strong conditioned fear, as reflected by high levels of persistent freezing, to both the contexts and to the CS, 24 h after fear conditioning. The induction of long-term potentiation ON was blocked immediately after fear conditioning. It was still markedly impaired 24 h after fear conditioning; reexposure to the conditioning chamber A (CA) or to a similar chamber 13 (CB) did not affect the impairment. However, presentation of the CS in the CA exacerbated the impairment of LTP, whereas the CS presentation in a CB ameliorated the impairment so that LTP induction did not differ from that of control groups. The induction of long-term depression (LTD) was facilitated immediately, but not 24 h, after fear conditioning. Only reexposure to the CS in the CA, but not reexposure to either chamber A or B alone, or the CS in chamber B, 24 h after conditioning, reinstated the facilitation of LTD induction. These data demonstrate that unconditioned and conditioned aversive stimuli in an intense fear conditioning paradigm can have profound effects on hippocampal synaptic plasticity, which may aid to understand the mechanisms underlying impairments of hippocampus-dependent memory by stress or in PTSD. (c) 2005 Wiley-Liss, Inc.

Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

The subband structure and inter-subband transition as a function of gate voltage are determined by solving the Schrodinger and Poisson equations self-consistently in an AlxGa1-xN/GaN heterostructure. Different aluminum mole fraction and thickness of AlxGa1-xN barrier are considered. Calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. Furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. When the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. As a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. This tendency is in good agreement with the available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Self-assembled InAs/GaAs quantum dots and quantum dot laser

Systematic study of molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs, In-AlAs/AlGaAs/GaAs, and InAs/InAlAs/InP quantum dots (QDs) is demonstrated. By adjusting growth conditions, surprising alignment, preferential elongation, and pronounced sequential coalescence of dots under the specific condition are realized. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 1 W is achieved from vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). An RT CW output power of 0.53 W ensures at least 3 000 h lasing (only drops 0.83 db). This is one of the best results ever reported.

Seed bubbles stabilize flow and heat transfer in parallel microchannels

Seed bubbles are generated on microheaters located at the microchannel upstream and driven by a pulse voltage signal, to improve flow and heat transfer performance in microchannels. The present study investigates how seed bubbles stabilize flow and heat transfer in micro-boiling systems. For the forced convection flow, when heat flux at the wall surface is continuously increased, flow instability is self-sustained in microchannels with large oscillation amplitudes and long periods. Introduction of seed bubbles in time sequence improves flow and heat transfer performance significantly. Low frequency (similar to 10 Hz) seed bubbles not only decrease oscillation amplitudes of pressure drops, fluid inlet and outlet temperatures and heating surface temperatures, but also shorten oscillation cycle periods. High frequency (similar to 100 Hz or high) seed bubbles completely suppress the flow instability and the heat transfer system displays stable parameters of pressure drops, fluid inlet and outlet temperatures and heating surface temperatures. Flow visualizations show that a quasi-stable boundary interface from spheric bubble to elongated bubble is maintained in a very narrow distance range at any time. The seed bubble technique almost does not increase the pressure drop across microsystems, which is thoroughly different from those reported in the literature. The higher the seed bubble frequency, the more decreased heating surface temperatures are. A saturation seed bubble frequency of 1000-2000 Hz can be reached, at which heat transfer enhancement attains the maximum degree, inferring a complete thermal equilibrium of vapor and liquid phases in microchannels. Benefits of the seed bubble technique are the stabilization of flow and heat transfer, decreasing heating surface temperatures and improving temperature uniformity of the heating surface.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Syntheses of Ag, PbSe, and PbTe nanocrystals and their binary self-assembly exploration at low size-ratio

Nanocrystals of Ag, PbSe, and PbTe were prepared via a high-temperature organic solution approach, respectively. Using a size-selection technique, the size-distribution of each set of nanocrystals could be fine-tuned and finally monodisperse products were achieved. Superlattice structure of binary self-assemblies in low size-ratio were also explored and characterized by transmission electron microscopy. It is realized that a success of achieving binary self-assembly pattern is greatly dependent on several key factors including particle size-distributions, relative concentrations of both components, as well as the size-ratios between Ag and PbSe (or PbTe) nanocrystals.

不同智力水平儿童的自我调控特点

Self-regulation has recently become an important topic in cognitive and developmental domain. According to previous theories and experimental studies, it is shown that self-regulation consist of both a personality (or social) aspect and a behavioral cognitive aspect of psychology. Self-regulation can be divided into self-regulation personality and self-regulation ability. In the present study researches have been carried out from two perspectives: child development and individual differences. We are eager to explore the characteristics of self-regulation in terms of human cognitive development. In the present study, we chose two groups of early adolescences one with high intelligence and the other with normal intelligence. In Study One Questionnaires were used to compare whether the highly intelligent group had had better self-regulation personality than the normal group. In Study Two experimental psychology tasks were used to compare whether highly intelligent children had had better self-regulation cognitive abilities than their normal peers. Finally, in Study Three we combined the results of Study One and Study Two to further explore the neural mechanisms for highly intelligent children with respect to their good self-regulation abilities. Some main results and conclusions are as follows: (1) Questionnaire results showed that highly intelligent children had better self-regulation personalities, and they got higher scores on the personalities related to self-regulation such as, self-reliance, stability, rule-consciousness. They also got higher scores on self-consciousness which meant that they could know their own self better than the normal children. (2) Among the three levels of cognitive difficulties in self-regulation abilities, the highly intelligent children had faster reaction speed than normal children in the primary self-regulation tasks. In the intermediate self-regulation tasks, highly intelligent children’s inhibition processing and executive processing were both better than their normal peers. In the advanced self-regulation tasks, highly intelligent children again had faster reaction speed and more reaction accuracy than their normal peers when facing with conflict and inconsistency experimental conditions,. Regression model’s results showed that primary and advanced self-regulation abilites had larger predictive power than intermediate self-regualation ability. (3) Our neural experiments showed that highly intelligent children had more efficient neural automatic processing ability than normal children. They also had better, faster and larger neural reaction to novel stimuli under pre-attentional condition which made good and firm neural basis for self-regualation. Highly intelligent children had more mature frontal lobe and pariental functions for inhibition processing and executive processing. P3 component in ERP was closely related to executive processing which mainly activated pariental function. There were two time-periods for inhibition processing—first it was the pariental function and later it was the coordination function of frontal and pariental lobes. While conflict control task had pariental N2 and frontal-pariental P3 neural sources, highly intelligent children had much smaller N2 and shorter P3 latency than normal children. Inconsistency conditions induced larger N2 than conditions without inconsistency, and conditions without inconsistency (or Conflict) induced higher P3 amplitudes than with Inconsistency (or Conflict) conditions. In conclusion, the healthy development of self-regulation was very important for children’s personality and cognition maturity, and self-regulation had its own specific characteristics in ways of presentation and ways of development. Better understanding of self-regulation can further help the exploration of the nature of human intelligence and consciousness.