Room-temperature microwave oscillation in AlAs/GaAs superlattices

Room-temperature microwave (MW) oscillations are observed in GaAs/AlAs (10 nm/2 nm) doped weakly coupled superlattices (SLs) in the first plateau of the I-V curve. Oscillations induced by sequential resonant tunneling are detected in a temperature range from 15 to 300 K by applying DC bias on the Si, diodes. The temperature dependence of current at small fixed bias voltage is also measured. Through analysis, it is found that the dominant transport mechanisms are sequential resonant tunneling and phonon-assisted tunneling when the temperature is below 300 K. The low bias voltage at which oscillations are realized is helpful to restrain thermionic emission through the X valley of AlAs barriers in the room-temperature transport. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

醋酸乙烯酯辐射乳液聚合

用膨胀计连续记录法测定了VAC辐射乳液聚合的转化率～时间曲线，并由此得到各种反应条件下的聚合反应速度。发现聚合反应速度与各因素之间的依赖关系为：Rp∝I~(0.5)[SLS]~(0.12)[V_M/V_(H2O)]~(0.03)。用电子显微镜测定了聚合所得胶乳的粒子大小及数目，发现：N∝[SLS]~(0.48); Rp∝N~(0.24)。其他因素对N无明显影响，实验测定还表明，当转化率超过10%以后，N基本保持恒定。测得的总的反应活化能为5.7千卡/克分子。这些实验结果与化学法VAc乳液聚合得到的结果较相似，这说明两种聚合中存在着一些类似的规律。另外，也注意到两种聚合之间所存在的一些差别，例如，辐射聚合所得乳胶粒较细小，直径分布较窄，同样反应条件下N值较大，以及总反应活化能较低。修改了Friis提出的VAc乳液聚合动力学方程中的常数Kd'的经验表达式。同修改后的Kd'计算出的转化率～时间理论曲线与我们用化学法聚合得到的实验结果很吻合。然后进一步将该模型中的引发速度修改成适合辐射聚合的情况，计算引发速度时同时考虑水、单体和聚合物的辐解，这样得到的转化率～时间理论曲线和我们用辐射法聚合得到的实验结果也较一致。通过我们的和文献上的实验结果，以及通过理论上的分析，论证了我们对Friis模型中的Kd'经验式修改的合理性，同时还论证了我们在理论计算中所采用的各个参数的值或表达式是合理的。考察了各种因素对辐射乳液聚合PVAc的分子量，分子量分布及支化度的影响，发现和化学法聚合的情况类似，主要影响因素是温度，温度越高，分子量越小，支化度越大。和化学法聚合产物不同之处在于，辐射乳液聚合PVAc的分子量比前者高，支化度比前者小，分子量分布比前者窄。另外，前者的分子量分布在整个转化率范围都呈对数正态分布，而后者的分子量分布只是在低转化率下才是如此。Friis为VAc乳液聚合提出的分子量和支化度随转化率变化的理论公式也能适合辐射法聚合的结果，但必须修改K_(tnm)和K_(tnp)的表达式。我们用电子计算机迭出了一组能适合我们各个实验结果的各反应速率常数表达式，并对所得到的这些表达式进行了讨论。这些讨论表明，辐射乳液聚合所得PVAc的分子量较高，支化度较小是由于辐射聚合温度较低，以及K_(tnm)和K_(tnp)比化学法聚合中的相应常数要小些等原因造成的。测定了PVAc和PVA的立规结构，头一头结构，发现辐射乳液聚合的PVAc和PVA均属于典型无规聚合物，头一头结构含量均比化学法聚合产物低。还测定了PVAc和PVA的Tg, Tm, Td，结晶度，溶解度，断裂强度，伸长率，粘接性能，络合交换性能等。发现辐射法聚合产物的结晶度比化学法聚合产物大，而溶解度较小，Tg, Td, Tm较高。所得结果表明，影响溶解度的主要因素是结晶度，影响结晶度的主要因素是头一头结构含量，影响Tg的主要因素是支化度，影响断裂强度的主要因素是结晶度和头一头结构含量，影响剪切力的主要因素是分子量等等。最后，实验结果表明，辐射乳液聚合所得高分子量PVAc具有优良的粘接性能，高分子量PVA具有优良的络合交联性能，这些性能使得高分子量PVAc和PVA在实际应用上将会是很有前途的。

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

KINEMATICAL STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE BY A DOUBLE CRYSTAL X-RAY-DIFFRACTION METHOD

Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated.

STUDY OF RAMAN-SPECTRA OF ZNSE-ZNTE STRAINED LAYER SUPERLATTICES

The Raman spectra of the II-VI wide band-gap compound ZnSe-ZnTe semiconductor strained-layer superlattices have been studied. The relations between the Raman shifts of the longitudinal optical phonon modes and the superlattice-structure parameters have been determined. When the layer thickness exceeds 40 angstrom, the change of the LO phonon-mode frequency shifts with the layer thickness is minimal, whereas when the layer thickness is smaller than 40 angstrom, great shifts have been observed. We estimate that the critical thickness of ZnSe-ZnTe SLS is about 40 angstrom. We have also found that the shifts induced by strain are much larger than the red shifts due to confinement.

MATRIX DESCRIPTION OF DYNAMIC HOLZ DIFFRACTION TESTED ON THE STRAINED LAYER SUPERLATTICE SI/GESI

A matrix formulation has been developed and applied to simulate large-angle convergent-beam electron diffraction (LACBED) patterns from the Si/GexSi1-x strained layer superlattice (SLS). Good quantitative agreement has been achieved between experimental and simulated patterns. By utilizing dynamical HOLZ line patterns, we demonstrate that an accuracy of better than 0.1% can be achieved in the determination of the averaged lattice constant of a SLS, and the averaged number of layers of atoms within one period of SLS can be determined up to a single monolayer.

Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices

With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.

Current oscillations and stable electric field domains in doped GaAs/AlAs superlattices

The crossover between two regimes has been observed in the vertical electric transport of weakly coupled GaAs/AlAs superlattices (SLs). At fixed d.c. bias, the SLs can be triggered by illumination to switch from a regime of temporal current oscillation to the formation of a stable electric field domain. The conversion can be reversed by raising the sample temperature to about 200 K. An effective carrier injection model is proposed to explain the conversion processes, taking into account the contact resistance originating from DX centres in the n(+)-Al0.5Ga0.5As contact layers which is sensitive to light illumination and temperature. In addition, quasiperiodic oscillations have been observed at a particular d.c. bias voltage.

GaAs基短周期InAs/GaSb超晶格红外探测器研究

采用分子束外延(MBE)方法,在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb (2ML/8ML)和InAs/GaSb (8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2(A)和57.3(A).室温红外透射光谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触,制备了短波和中波的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试,77K下,50%截止波长分别为2.1μm和5.0μm,黑体探测率D~·_(bb)均超过2×10~8cmHz~(1/2)/W.室温下短波探测器D~·_(bb)超过10~8cmHz~(1/2)/W.

生长温度对InAs／GaSb超晶格晶体结构和表面形貌的影响

采用分子束外延（MBE）技术，在GaSb（100）衬底上外延生长InAs（4ML）／GaSb（8ML）超晶格（SLs）。研究了生长温度（400～440℃）对超晶格晶体结构和表面形貌的影响。结果表明，420℃生长的超晶格结构完整和表面粗糙度最小，其荧光光谱（PL）峰值波长在约2．54μm处，响应光谱50％截止波长在约2．4μm处。通过控制快门顺序形成InSb和混合两种界面，并发现生长温度强烈影响混合界面InAs／GaSb超晶格结构和表面形貌，而对InSb界面超晶格的影响较小。

Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission

The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48 μtm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers,which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.

Modulation magnesium-doping in AlGaN/GaN superlattices

Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole concentration of SLs is much higher, than that of bulk GaN and AlGaN, The electrical properties of the SLs are less sensitive than the conventional bulk lavers.

实时数据流系统降载方法研究

随着信息技术的发展，出现了大量的数据流应用，如传感器数据处理、网络监控、金融数据分析等。在这些应用中，数据是一种连续、时变、有序、无限的序列，查询大多数都是采用连续查询方式。这种数据和查询的连续性对管理系统的资源需求很大。当系统资源不能满足查询处理要求，即查询处理任务超过系统的最大处理能力，用户的查询将得不到及时、正确地处理。同时，如果查询处理时间超过了查询截止期需求，查询结果就没有意义，甚至会造成灾难性后果。目前，很多研究都集中于数据流系统的降载，对支持实时查询处理的实时数据流系统降载的研究比较少。 本论文主要研究支持实时查询处理的实时数据流管理系统中的降载方法，主要包括如下三个方面：随机降载方法、语义降载方法与共享滑动窗口连接操作的降载方法。最后，通过实时数据流管理系统测试平台验证了所提出算法在提高系统吞吐量与降低截止期错失率方面表现出良好的性能。 针对实时数据流应用需求，提出了一种适合实时查询的数据流处理框架结构RT-DSPA和相应的多层过载处理策略MLOHS，为降载方法的研究提供一个框架基础。RT-DSPA分为用户层、DSMS层以及数据源层多个功能模块，具有多层性、可扩展性、健壮性以及可配置性的特点。 在随机降载方面，提出了一种基于数据流流速的负载估计算法；在实时数据流处理框架与负载估计算法的基础上，提出了一种截止期敏感的随机降载算法RLS-EDA。由于系统负载经常波动较大，该算法利用截止期的特点，使用暂存所丢弃元组技术充分地利用CPU空闲资源，使降载执行后系统的吞吐量得到提高，进而尽可能地降低查询截止期错失率；最后，讨论了降载过程中的队列维护策略、含共享操作符查询网络中的降载位置以及降载操作符插入查询网络的算法。实验结果表明，在系统负载波动较大的情况下，RLS-EDA算法表现出良好的性能。 在充分了解数据流及查询特征的情况下，语义降载表现出更好的降载效果。为明确语义降载时使用到的语义，提出了元组价值、价值等级的概念，给出价值等级划分时发生冲突的解决方法。设计了适合实时数据流管理系统的价值等级–执行开销优先级表和截止期–价值密度优先级表，其在确定优先级时可考虑多维因素。基于这两种优先级表设计，提出了相对应的语义降载算法SLS-PT-VD&EC和SLS-PT-D&TVD。基于优先级表的语义降载算法能够灵活地满足用户的不同需求，同时提高系统降载时的性能。 最后，针对共享滑动窗口连接操作符的过载情况，利用查询截止期的特点，提出了一种基于暂存丢弃元组技术的共享滑动窗口连接的降载算法LS-SJRT；为减小LS-SJRT算法的降载开销，提出了一种改进的基于调节滑动窗口宽度的共享滑动窗口连接降载算法LS-SJRT-CW。实验结果显示这两种算法在共享连接操作符过载时都能够表现出较好的性能。

Determination of molecular weight and molecular sizes of polymers by high temperature gel permeation chromatography with a static and dynamic laser light scattering detector

Flow-mode static and dynamic laser light scattering (SLS/DLS) studies of polymers, including polystyrene, polyethylene, polypropylene and poly(dimethylsiloxane) (PDMS), in 1,2,4-trichlorobenzene (TCB) at 150 degreesC were performed on a high temperature gel permeation chromatography (GPC) coupled with a SLS/DLS detector. Both absolute molecular weight (M) and molecular sizes (radius of gyration, R-g and hydrodynamic radius, R-h) of polymers eluting from the GPC columns were obtained simultaneously. The conformation of different polymers in TCB at 150 degreesC were discussed according to the scaling relationships between R-g, R-h and M and the rho-ratio (p = R-g/R-h). Flow-mode DLS results of PDMS were verified by batch-mode DLS study of the same sample. The presented technique was proved to be a convenient and quick method to study the shape and conformation of polymers in solution at high temperature. However, the flow-mode DLS was only applicable for high molecular weight polymers with a higher refractive index increment such as PDMS.

反渗透复合膜的制备和脱盐功能

以玻璃化温度高、强度大、易磺化和耐酸碱的带酞侧基的聚芳醚酮(PEK-C)为支撑膜材料,研究了PEK-C铸膜液组成及复合液配比等对PFT反渗透复合膜(PFT ROCM)制备及其脱盐功能的影响。 试剂与材料 糠醇(FA):化学纯。用前精制,三(2-羟乙基)异氰尿酸酯(THEIC)。熔点134～136℃。聚乙二醇-400(PEG-400):化学纯。DMF,DMAc,N-甲基吡咯烷酮(NMP)为分析纯,经脱水精制。异丙醇、硫酸为分析纯。十二烷基磺酸钠(SLS)化学纯。含酞侧基的聚醚醚酮PEK-